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SI2301CDS-T1-E3

SI2301CDS-T1-E3
Mfr. #:
SI2301CDS-T1-E3
Fabricante:
Vishay
Descripción:
MOSFET P-CH 20V 3.1A SOT23-3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI2301CDS-T1-E3 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
SI2301CDS-T1-E3 más información
Atributo del producto
Valor de atributo
Fabricante
Vishay Siliconix
categoria de producto
FET - Single
Serie
TrincheraFETR
embalaje
Embalaje alternativo de Digi-ReelR
Alias ​​de parte
SI2301CDS-E3
Unidad de peso
0.050717 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
TO-236-3, SC-59, SOT-23-3
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
1 Channel
Paquete de dispositivo de proveedor
SOT-23-3 (TO-236)
Configuración
Único
Tipo FET
Canal P MOSFET, óxido metálico
Potencia máxima
1.6W
Tipo transistor
1 P-Channel
Drenaje-a-fuente-voltaje-Vdss
20V
Entrada-Capacitancia-Ciss-Vds
405pF @ 10V
Función FET
Estándar
Corriente-Continuo-Drenaje-Id-25 ° C
3.1A (Tc)
Rds-On-Max-Id-Vgs
112 mOhm @ 2.8A, 4.5V
Vgs-th-Max-Id
1V @ 250μA
Puerta-Carga-Qg-Vgs
10nC @ 4.5V
Disipación de potencia Pd
860 mW
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
35 ns
Hora de levantarse
35 ns
Vgs-Puerta-Fuente-Voltaje
8 V
Id-corriente-de-drenaje-continua
- 2.3 A
Vds-Drain-Source-Breakdown-Voltage
- 20 V
Resistencia a la fuente de desagüe de Rds
112 mOhms
Polaridad del transistor
P-Channel
Tiempo de retardo de apagado típico
30 ns
Tiempo de retardo de encendido típico
11 ns
Modo de canal
Mejora
Tags
SI2301CDS-T1, SI2301CDS-T, SI2301C, SI2301, SI230, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET P-CH 20V 3.1A 3-Pin SOT-23 T/R
***Components
P-Ch MOSFET SOT-23 20V 112mohm @ 4.5V -
***ment14 APAC
MOSFET, P CH, -20V, -3.1A, SOT-23-3
***i-Key
MOSFET P-CH 20V 3.1A SOT23-3
***ure Electronics
P-CHANNEL 20-V (D-S) MOSFET
***ponent Sense
''Si2301BDS MOS-FET Enh P 18 V 1.8 A
***ied Electronics & Automation
20V 3.1A 1.6W 112mohm @ 4.5V
***
P-CHANNEL 20-V
***ark
Transistor Polarity:p Channel; Continuous Drain Current Id:-3.1A; Drain Source Voltage Vds:-20V; On Resistance Rds(On):0.11Ohm; Rds(On) Test Voltage Vgs:-2.5V; Threshold Voltage Vgs:-400Mv; Power Dissipation Pd:1.6W; Product Range:- Rohs Compliant: No
***nell
MOSFET, P CH, -20V, -3.1A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.1A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.11ohm; Rds(on) Test Voltage Vgs:-2.5V; Power Dissipation Pd:1.6W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-23; No. of Pins:3; MSL:-
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Parte # Mfg. Descripción Valores Precio
SI2301CDS-T1-E3
DISTI # V72:2272_07431534		Vishay IntertechnologiesTrans MOSFET P-CH 20V 2.3A 3-Pin SOT-23 T/R
RoHS: Compliant		2676
  • 1000:$0.1277
  • 500:$0.1442
  • 250:$0.2169
  • 100:$0.2182
  • 25:$0.3061
  • 10:$0.3069
  • 1:$0.3886
SI2301CDS-T1-E3
DISTI # SI2301CDS-T1-E3CT-ND		Vishay SiliconixMOSFET P-CH 20V 3.1A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		69909In Stock
  • 1000:$0.1184
  • 500:$0.1525
  • 100:$0.2545
  • 10:$0.3850
  • 1:$0.5500
SI2301CDS-T1-E3
DISTI # SI2301CDS-T1-E3DKR-ND		Vishay SiliconixMOSFET P-CH 20V 3.1A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		69909In Stock
  • 1000:$0.1184
  • 500:$0.1525
  • 100:$0.2545
  • 10:$0.3850
  • 1:$0.5500
SI2301CDS-T1-E3
DISTI # SI2301CDS-T1-E3TR-ND		Vishay SiliconixMOSFET P-CH 20V 3.1A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		69000In Stock
  • 3000:$0.1040
SI2301CDS-T1-E3
DISTI # 31647599		Vishay IntertechnologiesTrans MOSFET P-CH 20V 2.3A 3-Pin SOT-23 T/R
RoHS: Compliant		2676
  • 1000:$0.1277
  • 500:$0.1442
  • 250:$0.2169
  • 100:$0.2182
  • 46:$0.3061
SI2301CDS-T1-E3
DISTI # 30617107		Vishay IntertechnologiesTrans MOSFET P-CH 20V 2.3A 3-Pin SOT-23 T/R
RoHS: Compliant		750
  • 500:$0.1887
  • 100:$0.2104
  • 50:$0.2384
  • 16:$0.3379
SI2301CDS-T1-E3
DISTI # SI2301CDS-T1-E3		Vishay IntertechnologiesTrans MOSFET P-CH 20V 2.3A 3-Pin SOT-23 T/R - Cut TR (SOS) (Alt: SI2301CDS-T1-E3)
RoHS: Not Compliant
Min Qty: 1
Container: Cut Tape		Americas - 1895
  • 1:$0.0609
  • 30:$0.0609
  • 75:$0.0599
  • 150:$0.0599
  • 375:$0.0599
  • 750:$0.0599
  • 1500:$0.0599
SI2301CDS-T1-E3
DISTI # SI2301CDS-T1-E3		Vishay IntertechnologiesTrans MOSFET P-CH 20V 2.3A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2301CDS-T1-E3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.0546
  • 6000:$0.0530
  • 12000:$0.0508
  • 18000:$0.0494
  • 30000:$0.0481
SI2301CDS-T1-E3Vishay IntertechnologiesTrans MOSFET P-CH 20V 2.3A 3-Pin SOT-23 T/R - Tape and Reel
RoHS: Compliant
Container: Reel		Americas - 0
    SI2301CDS-T1-E3
    DISTI # 97W2628    		Vishay IntertechnologiesMOSFET Transistor, P Channel, -3.1 A, -20 V, 0.11 ohm, -2.5 V, -400 mV RoHS Compliant: Yes2566
    • 1000:$0.1670
    • 500:$0.1870
    • 100:$0.2330
    • 50:$0.2700
    • 25:$0.3080
    • 10:$0.3450
    • 1:$0.5100
    SI2301CDS-T1-E3.
    DISTI # 30AC0135    		Vishay IntertechnologiesTransistor Polarity:P Channel,Continuous Drain Current Id:-3.1A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.11ohm,Rds(on) Test Voltage Vgs:-2.5V,Threshold Voltage Vgs:-400mV,Power Dissipation Pd:1.6W,Product Range:- RoHS Compliant: No0
    • 1:$0.0550
    • 6000:$0.0550
    • 12000:$0.0550
    • 18000:$0.0550
    • 30000:$0.0550
    SI2301CDS-T1-E3
    DISTI # 70459660    		Vishay Siliconix20V 3.1A 1.6W 112mohm @ 4.5V
    RoHS: Compliant    		0
    • 3000:$0.2590
    • 6000:$0.2410
    • 12000:$0.2060
    SI2301CDS-T1-E3
    DISTI # 781-SI2301CDS-E3    		Vishay IntertechnologiesMOSFET -20V Vds 8V Vgs SOT-23
    RoHS: Compliant    		20181
    • 1:$0.5100
    • 10:$0.3450
    • 100:$0.2330
    • 500:$0.1870
    • 1000:$0.1410
    • 3000:$0.1290
    • 6000:$0.1210
    • 9000:$0.1130
    • 24000:$0.1040
    SI2301CDS-T1-E3Vishay Intertechnologies 
    RoHS: Compliant    		1900Cut Tape/Mini-Reel
    • 1:$0.1640
    • 100:$0.1180
    • 250:$0.1110
    • 500:$0.1050
    • 1500:$0.0928
    SI2301CDS-T1-E3Vishay IntertechnologiesP-Channel 20 V112 mO 5.5 nC SMT TrenchFET Power Mosfet - SOT-23
    RoHS: Compliant    		36000Reel
    • 3000:$0.0835
    • 6000:$0.0790
    • 12000:$0.0772
    SI2301CDS-T1-E3Vishay Intertechnologies 248
      SI2301CDS-T1-E3
      DISTI # 2335284      		Vishay IntertechnologiesMOSFET, P CH, -20V, -3.1A, SOT-23
      RoHS: Compliant      		2566
      • 1000:$0.2520
      • 500:$0.2970
      • 100:$0.3690
      • 10:$0.5460
      • 1:$0.8080
      SI2301CDS-T1-E3
      DISTI # 2335284      		Vishay IntertechnologiesMOSFET, P CH, -20V, -3.1A, SOT-23
      RoHS: Compliant      		3392
      • 500:£0.1580
      • 250:£0.1690
      • 100:£0.1800
      • 25:£0.2890
      • 5:£0.3030
      SI2301CDS-T1-E3
      DISTI # XSFP00000007280      		Vishay SiliconixRectifierDiode,1Element,0.7A,600VV(RRM),Silicon,DO-219AB
      RoHS: Compliant      		120000
      • 120000:$0.1742
      • 3000:$0.1916
      SI2301CDS-T1-E3Vishay IntertechnologiesMOSFET -20V Vds 8V Vgs SOT-23
      RoHS: Compliant      		Americas -
        Imagen Parte # Descripción
        SI2301CDS-T1-GE3

        Mfr.#: SI2301CDS-T1-GE3

        OMO.#: OMO-SI2301CDS-T1-GE3

        		 MOSFET -20V Vds 8V Vgs SOT-23
        SI2301CDS-T1-GE3.

        Mfr.#: SI2301CDS-T1-GE3.

        OMO.#: OMO-SI2301CDS-T1-GE3-

        		 MOSFET 20V 3.1A 1.6W 112 mohms @ 4.5V
        SI2301CDS

        Mfr.#: SI2301CDS

        OMO.#: OMO-SI2301CDS-1190

        		 Nuevo y original
        SI2301CDS-T1-G

        Mfr.#: SI2301CDS-T1-G

        OMO.#: OMO-SI2301CDS-T1-G-1190

        		 Nuevo y original
        SI2301CDS-T1-GE3 (VISHAY)

        Mfr.#: SI2301CDS-T1-GE3 (VISHAY)

        OMO.#: OMO-SI2301CDS-T1-GE3-VISHAY--1190

        		 Nuevo y original
        SI2301CDS-T1-GE3 , MAX63

        Mfr.#: SI2301CDS-T1-GE3 , MAX63

        OMO.#: OMO-SI2301CDS-T1-GE3-MAX63-1190

        		 Nuevo y original
        SI2301CDS-TI-GE3

        Mfr.#: SI2301CDS-TI-GE3

        OMO.#: OMO-SI2301CDS-TI-GE3-1190

        		 Nuevo y original
        SI2301CDS-T1-E3-CUT TAPE

        Mfr.#: SI2301CDS-T1-E3-CUT TAPE

        OMO.#: OMO-SI2301CDS-T1-E3-CUT-TAPE-1190

        		 Nuevo y original
        SI2301CDS-T1-GE3-CUT TAPE

        Mfr.#: SI2301CDS-T1-GE3-CUT TAPE

        OMO.#: OMO-SI2301CDS-T1-GE3-CUT-TAPE-1190

        		 Nuevo y original
        SI2301CDS-T1-E3

        Mfr.#: SI2301CDS-T1-E3

        OMO.#: OMO-SI2301CDS-T1-E3-VISHAY

        		 MOSFET P-CH 20V 3.1A SOT23-3
        Disponibilidad
        Valores:
        Available
        En orden:
        1000
        Ingrese la cantidad:
        El precio actual de SI2301CDS-T1-E3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        0,07 US$
        0,07 US$
        10
        0,07 US$
        0,68 US$
        100
        0,06 US$
        6,49 US$
        500
        0,06 US$
        30,65 US$
        1000
        0,06 US$
        57,70 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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