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IPW50R399CP

IPW50R399CP
Mfr. #:
IPW50R399CP
Fabricante:
FEELING
Descripción:
Darlington Transistors MOSFET N-Ch 500V 9A TO247-3 CoolMOS CP
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPW50R399CP Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
SENTIMIENTO
categoria de producto
FET - Single
Serie
CoolMOS CP
embalaje
Tubo
Alias ​​de parte
IPW50R399CPFKSA1 IPW50R399CPXK SP000259980
Unidad de peso
1.340411 oz
Estilo de montaje
A través del orificio
Nombre comercial
CoolMOS
Paquete-Estuche
TO-247-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
83 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
14 ns
Hora de levantarse
14 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
9 A
Vds-Drain-Source-Breakdown-Voltage
500 V
Resistencia a la fuente de desagüe de Rds
399 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
80 ns
Tiempo de retardo de encendido típico
35 ns
Modo de canal
Mejora
Tags
IPW50R39, IPW50R3, IPW50, IPW5, IPW
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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 500V 9A 3-Pin(3+Tab) TO-247
***ment14 APAC
MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:560V; On Resistance Rds(on):399mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Current Id Max:9A; Package / Case:TO-247; Power Dissipation Pd:83W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:560V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ineon
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
Parte # Mfg. Descripción Valores Precio
IPW50R399CPFKSA1
DISTI # IPW50R399CPFKSA1-ND		Infineon Technologies AGMOSFET N-CH 560V 9A TO-247
RoHS: Compliant
Min Qty: 240
Container: Tube		Limited Supply - Call
    IPW50R399CPFKSA1Infineon Technologies AGPower Field-Effect Transistor, 9A I(D), 500V, 0.399ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
    RoHS: Compliant    		5520
    • 1000:$1.1100
    • 500:$1.1600
    • 100:$1.2100
    • 25:$1.2600
    • 1:$1.3600
    IPW50R399CP
    DISTI # 726-IPW50R399CP    		Infineon Technologies AGMOSFET N-Ch 500V 9A TO247-3 CoolMOS CP
    RoHS: Compliant    		190
    • 1:$2.7100
    • 10:$2.3000
    • 100:$1.8400
    • 500:$1.6100
    • 1000:$1.3400
    • 2500:$1.2400
    • 5000:$1.2000
    IPW50R399CPFKSA1
    DISTI # N/A    		Infineon Technologies AGMOSFET LOW POWER_LEGACY0
      IPW50R399CP
      DISTI # 1664082      		Infineon Technologies AGMOSFET, N, TO-247
      RoHS: Compliant      		0
      • 1:$4.2900
      • 10:$3.6500
      • 100:$2.9100
      • 500:$2.5600
      • 1000:$2.1800
      Imagen Parte # Descripción
      IPW50R140CPFKSA1

      Mfr.#: IPW50R140CPFKSA1

      OMO.#: OMO-IPW50R140CPFKSA1

      		 MOSFET HIGH POWER_LEGACY
      IPW50R190CEFKSA1

      Mfr.#: IPW50R190CEFKSA1

      OMO.#: OMO-IPW50R190CEFKSA1

      		 MOSFET N-Ch 500V 63A TO247-3
      IPW50R280CEFKSA1

      Mfr.#: IPW50R280CEFKSA1

      OMO.#: OMO-IPW50R280CEFKSA1

      		 MOSFET COOL MOS
      IPW50R199CPFKSA1

      Mfr.#: IPW50R199CPFKSA1

      OMO.#: OMO-IPW50R199CPFKSA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 550V 17A TO-247
      IPW50R140

      Mfr.#: IPW50R140

      OMO.#: OMO-IPW50R140-1190

      		 Nuevo y original
      IPW50R190CE,5R190C,

      Mfr.#: IPW50R190CE,5R190C,

      OMO.#: OMO-IPW50R190CE-5R190C--1190

      		 Nuevo y original
      IPW50R299CP,5R299P

      Mfr.#: IPW50R299CP,5R299P

      OMO.#: OMO-IPW50R299CP-5R299P-1190

      		 Nuevo y original
      IPW50R399CP/5R350P

      Mfr.#: IPW50R399CP/5R350P

      OMO.#: OMO-IPW50R399CP-5R350P-1190

      		 Nuevo y original
      IPW50R399CPFKSA1

      Mfr.#: IPW50R399CPFKSA1

      OMO.#: OMO-IPW50R399CPFKSA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 560V 9A TO-247
      IPW50R250CP

      Mfr.#: IPW50R250CP

      OMO.#: OMO-IPW50R250CP-124

      		 Darlington Transistors MOSFET N-Ch 500V 13A TO247-3 CoolMOS CP
      Disponibilidad
      Valores:
      Available
      En orden:
      5500
      Ingrese la cantidad:
      El precio actual de IPW50R399CP es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      1,80 US$
      1,80 US$
      10
      1,71 US$
      17,10 US$
      100
      1,62 US$
      162,00 US$
      500
      1,53 US$
      765,00 US$
      1000
      1,44 US$
      1 440,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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