DMC3021LSD-13

DMC3021LSD-13
Mfr. #:
DMC3021LSD-13
Fabricante:
Diodes Incorporated
Descripción:
MOSFET MOSFET COMP PAIR
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
DMC3021LSD-13 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
DMC3021LSD-13 DatasheetDMC3021LSD-13 Datasheet (P4-P6)DMC3021LSD-13 Datasheet (P7-P8)
ECAD Model:
Más información:
DMC3021LSD-13 más información
Atributo del producto
Valor de atributo
Fabricante:
Diodos incorporados
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SOIC-8
Número de canales:
2 Channel
Polaridad del transistor:
Canal N, canal P
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
8.5 A, 7 A
Rds On - Resistencia de la fuente de drenaje:
21 mOhms, 39 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1 V
Vgs - Voltaje puerta-fuente:
10 V
Qg - Carga de puerta:
7.8 nC, 21.1 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
2.5 W
Configuración:
Doble
Modo de canal:
Mejora
Embalaje:
Carrete
Producto:
Pequeña señal MOSFET
Serie:
DMC3021
Tipo de transistor:
1 N-Channel, 1 P-Channel
Marca:
Diodos incorporados
Otoño:
8.55 ns, 22.2 ns
Tipo de producto:
MOSFET
Hora de levantarse:
4.5 ns, 6.5 ns
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
26.3 ns, 50.1 ns
Tiempo típico de retardo de encendido:
5 ns, 10.1 ns
Unidad de peso:
0.002610 oz
Tags
DMC3021LS, DMC3021, DMC302, DMC30, DMC3, DMC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N/P-CH 30V 8.5A/7A 8-Pin SOIC T/R
***ure Electronics
DMC3021LSD Series 30 V 21 mOhm Complementary Pair Enhancement Mode Mosfet
***ark
DUAL MOSFET, COMPLEMENT, 30V, 8.5A, SOIC ROHS COMPLIANT: YES
*** Stop Electro
Power Field-Effect Transistor, 8.5A I(D), 30V, 0.021ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
***ure Electronics
N-Channel 30 V 20 mO Surface Mount PowerTrench® Mosfet - SOIC-8
***emi
N-Channel PowerTrench® MOSFET 30V, 9A, 20.0mΩ
***Yang
Trans MOSFET N-CH 30V 9A 8-Pin SOIC N T/R - Tape and Reel
***rchild Semiconductor
The FDS8882 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.
***ark
Mosfet Transistor, P Channel, -10 A, -30 V, 20 Mohm, 10 V, -1 V
***itex
Transistor: P-MOSFET; unipolar; -30V; -10A; 0.02ohm; 2.5W; -55+150 deg.C; SMD; SO8
***ure Electronics
Single P-Channel 30 V 0.02 Ohm 61 nC HEXFET® Power Mosfet - SOIC-8
***ineon SCT
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***C
Trans MOSFET P-CH 30V 10A 8-Pin SOIC T/R Trans MOSFET P-CH 30V 10A 8-Pin SOIC T/R Trans MOSFET P-CH 30V 10A 8-Pin SOIC T/R
***nell
MOSFET, P, -30V, -10A, SO-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -10A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.02ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -1V; Power D
*** Stop Electro
Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
***ark
Mosfet Transistor, P Channel, -9.2 A, -30 V, 15.6 Mohm, -10 V, -1.8 V
***(Formerly Allied Electronics)
IRF9333PBF P-channel MOSFET Transistor; 9.2 A; 30 V; 8-Pin SOIC
***roFlash
Single P-Channel 30 V 32.5 mOhm 14 nC HEXFET® Power Mosfet - SOIC-8
***ineon SCT
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***ineon
Benefits: RoHS Compliant; P-Channel MOSFET | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side
***ure Electronics
Single N-Channel 30 V 2 W 6 nC Hexfet Power Mosfet Surface Mount - SOIC-8
***nsix Microsemi
Power Field-Effect Transistor, 9.7A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:9.7A; On Resistance Rds(On):0.0125Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V Rohs Compliant: Yes
***nell
MOSFET,DUAL N-CH 30V 9.7A SO8; Transistor Type:Power MOSFET; Transistor Polarity:N ; Voltage, Vds Typ:30V; Current, Id Cont:9.7A; On State Resistance:15.5mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.8V; Case Style:SOIC; Termination Type:SMD; Operating Temperature Range:-55°C to +175°C; No. of Pins:8; Power Dissipation Pd:2W; Voltage, Vgs th Max:2.35V; Transistor Case Style:SOIC
*** Source Electronics
MOSFET P-CH 30V 8.8A 8-SOIC / Trans MOSFET P-CH 30V 8.8A 8-Pin SOIC T/R
***ure Electronics
P-Channel 30 V 20 mOhm 17 nC Surface Mount PowerTrench Mosfet - SOIC-8
***emi
30V P-Channel PowerTrench® MOSFET -8.8A, 20mΩ
***nell
MOSFET, P CHANNEL0, -30V, -8.8A, SOIC; Transistor Polarity: P Channel; Continuous Drain Current Id: -8.8A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.015ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs
***rchild Semiconductor
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V - 25V).
***ure Electronics
Dual N-Channel 30 V 15.5 mOhm 5.7 nC HEXFET® Power Mosfet - SOIC-8
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 8A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ment14 APAC
MOSFET, DUAL N-CH 30V 8A/11A SO8; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):15.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.4W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:8mA; Package / Case:SOIC; Power Dissipation Pd:2.4W; Power Dissipation Pd:2.4W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V
DMx Enhancement Mode MOSFETs
Diodes Incorporated DMx series enhancement mode MOSFETs feature low on-resistance and fast switching, making them ideal for high efficiency power management applications. Diodes Incorporated DMx enhancement mode MOSFETs are also optimized for motor control, backlighting, and DC-DC converter applications. Diodes Incorporated DMx series includes complementary dual, complementary pair, P-channel, and N-channel enhancement mode MOSFETs.
Parte # Mfg. Descripción Valores Precio
DMC3021LSD-13
DISTI # 31259106
Zetex / Diodes IncTrans MOSFET N/P-CH 30V 8.5A/7A Automotive 8-Pin SO T/R
RoHS: Compliant
5000
  • 2500:$0.1270
DMC3021LSD-13
DISTI # DMC3021LSD-13DICT-ND
Diodes IncorporatedMOSFET N/P-CH 30V 8.5A/7A 8SO
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
13316In Stock
  • 1000:$0.2559
  • 500:$0.3238
  • 100:$0.4326
  • 10:$0.5690
  • 1:$0.6700
DMC3021LSD-13
DISTI # DMC3021LSD-13DIDKR-ND
Diodes IncorporatedMOSFET N/P-CH 30V 8.5A/7A 8SO
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
13316In Stock
  • 1000:$0.2559
  • 500:$0.3238
  • 100:$0.4326
  • 10:$0.5690
  • 1:$0.6700
DMC3021LSD-13
DISTI # DMC3021LSD-13DITR-ND
Diodes IncorporatedMOSFET N/P-CH 30V 8.5A/7A 8SO
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
12500In Stock
  • 2500:$0.2286
DMC3021LSD-13
DISTI # DMC3021LSD-13
Diodes IncorporatedTrans MOSFET N/P-CH 30V 8.5A/7A 8-Pin SOIC T/R (Alt: DMC3021LSD-13)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Europe - 0
  • 2500:€0.2719
  • 5000:€0.1969
  • 10000:€0.1839
  • 15000:€0.1609
  • 25000:€0.1499
DMC3021LSD-13
DISTI # DMC3021LSD-13
Diodes IncorporatedTrans MOSFET N/P-CH 30V 8.5A/7A 8-Pin SOIC T/R - Tape and Reel (Alt: DMC3021LSD-13)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$0.1729
  • 5000:$0.1639
  • 10000:$0.1569
  • 15000:$0.1499
  • 25000:$0.1459
DMC3021LSD-13
DISTI # 70438025
Diodes IncorporatedMOSFET Dual N/P-Channel 30V 8.5A/7A SO8
RoHS: Compliant
0
  • 125:$0.3400
  • 625:$0.3000
  • 1250:$0.2700
  • 2500:$0.2400
DMC3021LSD-13
DISTI # 621-DMC3021LSD-13
Diodes IncorporatedMOSFET MOSFET COMP PAIR
RoHS: Compliant
9829
  • 1:$0.5200
  • 10:$0.4340
  • 100:$0.2650
  • 1000:$0.2050
  • 2500:$0.1740
DMC3021LSD-13
DISTI # 7514067
Zetex / Diodes IncMOSFET DUAL N/P-CHANNEL 30V 8.5A/7A SO8, PK475
  • 1250:£0.1740
  • 625:£0.2180
  • 125:£0.2600
  • 25:£0.3360
DMC3021LSD-13
DISTI # 7514067P
Zetex / Diodes IncMOSFET DUAL N/P-CHANNEL 30V 8.5A/7A SO8, RL550
  • 1250:£0.1740
  • 625:£0.2180
  • 125:£0.2600
DMC3021LSD-13
DISTI # DMC3021LSD-13
Diodes IncorporatedTransistor: N/P-MOSFET,unipolar,complementary,30/-30V,7/-8.5A593
  • 3:$0.3001
  • 25:$0.2584
  • 100:$0.2078
  • 500:$0.1931
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Disponibilidad
Valores:
Available
En orden:
1993
Ingrese la cantidad:
El precio actual de DMC3021LSD-13 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,52 US$
0,52 US$
10
0,43 US$
4,34 US$
100
0,26 US$
26,50 US$
1000
0,20 US$
205,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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