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NSS40300DDR2G

NSS40300DDR2G
Mfr. #:
NSS40300DDR2G
Fabricante:
ON Semiconductor
Descripción:
Bipolar Transistors - BJT DUAL 40V LOW VCE XTR PNP
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
NSS40300DDR2G Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NSS40300DDR2G DatasheetNSS40300DDR2G Datasheet (P4-P6)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores bipolares - BJT
RoHS:
Y
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SOIC-Narrow-8
Polaridad del transistor:
PNP
Configuración:
Doble
Voltaje colector-emisor VCEO Max:
- 40 V
Colector- Voltaje base VCBO:
- 40 V
Emisor- Voltaje base VEBO:
- 7 V
Voltaje de saturación colector-emisor:
0.135 V
Corriente máxima del colector de CC:
- 6 A
Producto de ganancia de ancho de banda fT:
100 MHz
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
NSS40300DD
Ganancia de corriente CC hFE Max:
250 at 10 mA, 2 V
Altura:
1.5 mm
Longitud:
5 mm
Embalaje:
Carrete
Ancho:
4 mm
Marca:
EN Semiconductor
Corriente continua del colector:
- 3 A
Colector de CC / Ganancia base hfe Min:
250
Pd - Disipación de energía:
783 mW
Tipo de producto:
BJT - Transistores bipolares
Cantidad de paquete de fábrica:
2500
Subcategoría:
Transistores
Unidad de peso:
0.005044 oz
Tags
NSS40300, NSS403, NSS40, NSS4, NSS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans GP BJT NPN/PNP 40V 3A 8-Pin SOIC N T/R
***th Star Micro
ON Semiconductors e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage high speed switching applications where affordable efficient energy control is important. Typical applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMUs control outputs and the Linear Gain (Beta) makes them ideal components in analog amplifiers.
Parte # Mfg. Descripción Valores Precio
NSS40300DDR2G
DISTI # NSS40300DDR2GOSCT-ND		ON SemiconductorTRANS 2PNP 40V 3A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2445In Stock
  • 1000:$0.3288
  • 500:$0.4110
  • 100:$0.5199
  • 10:$0.6780
  • 1:$0.7700
NSS40300DDR2G
DISTI # NSS40300DDR2GOSDKR-ND		ON SemiconductorTRANS 2PNP 40V 3A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2445In Stock
  • 1000:$0.3288
  • 500:$0.4110
  • 100:$0.5199
  • 10:$0.6780
  • 1:$0.7700
NSS40300DDR2G
DISTI # NSS40300DDR2GOSTR-ND		ON SemiconductorTRANS 2PNP 40V 3A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 12500:$0.2660
  • 5000:$0.2693
  • 2500:$0.2893
NSS40300DDR2G
DISTI # NSS40300DDR2G		ON SemiconductorTrans GP BJT NPN/PNP 40V 3A 8-Pin SOIC N T/R (Alt: NSS40300DDR2G)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 25000:€0.2399
  • 15000:€0.2589
  • 10000:€0.2799
  • 5000:€0.3059
  • 2500:€0.3739
NSS40300DDR2G
DISTI # NSS40300DDR2G		ON SemiconductorTrans GP BJT NPN/PNP 40V 3A 8-Pin SOIC N T/R - Bulk (Alt: NSS40300DDR2G)
RoHS: Compliant
Min Qty: 1191
Container: Bulk		Americas - 0
  • 11910:$0.2589
  • 5955:$0.2649
  • 3573:$0.2689
  • 2382:$0.2719
  • 1191:$0.2739
NSS40300DDR2G
DISTI # NSS40300DDR2G		ON SemiconductorTrans GP BJT NPN/PNP 40V 3A 8-Pin SOIC N T/R - Tape and Reel (Alt: NSS40300DDR2G)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.2339
  • 15000:$0.2399
  • 10000:$0.2429
  • 5000:$0.2459
  • 2500:$0.2479
NSS40300DDR2G
DISTI # 863-NSS40300DDR2G		ON SemiconductorBipolar Transistors - BJT DUAL 40V LOW VCE XTR PNP
RoHS: Compliant		5043
  • 1:$0.7100
  • 10:$0.5890
  • 100:$0.3800
  • 1000:$0.3040
  • 2500:$0.2570
  • 10000:$0.2480
  • 25000:$0.2380
NSS40300DDR2GON SemiconductorSmall Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon
RoHS: Compliant		54821
  • 1000:$0.2800
  • 500:$0.2900
  • 100:$0.3000
  • 25:$0.3200
  • 1:$0.3400
NSS40300DDR2GON Semiconductor 449
    NSS40300DDR2GON SemiconductorDual 40 V, 6.0 A, Low VCE(sat) PNP Transistor398
    • 1:$0.4400
    • 100:$0.3400
    • 500:$0.3100
    • 1000:$0.2900
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    TLC59282DBQR

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    OMO.#: OMO-TLC59282DBQR-TEXAS-INSTRUMENTS

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    SI8380PM-IU

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    Disponibilidad
    Valores:
    Available
    En orden:
    1988
    Ingrese la cantidad:
    El precio actual de NSS40300DDR2G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,71 US$
    0,71 US$
    10
    0,59 US$
    5,89 US$
    100
    0,38 US$
    38,00 US$
    1000
    0,30 US$
    304,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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