SI7178DP-T1-GE3

SI7178DP-T1-GE3
Mfr. #:
SI7178DP-T1-GE3
Fabricante:
Vishay
Descripción:
Trans MOSFET N-CH 100V 14.9A 8-Pin PowerPAK SO T/R
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI7178DP-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Vishay Siliconix
categoria de producto
FET - Single
Serie
TrincheraFETR
embalaje
Embalaje alternativo de Digi-ReelR
Alias ​​de parte
SI7178DP-GE3
Unidad de peso
0.017870 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
PowerPAKR SO-8
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
1 Channel
Paquete de dispositivo de proveedor
PowerPAKR SO-8
Configuración
Único
Tipo FET
Canal N MOSFET, óxido metálico
Potencia máxima
104W
Tipo transistor
1 N-Channel
Drenaje-a-fuente-voltaje-Vdss
100V
Entrada-Capacitancia-Ciss-Vds
2870pF @ 50V
Función FET
Estándar
Corriente-Continuo-Drenaje-Id-25 ° C
60A (Tc)
Rds-On-Max-Id-Vgs
14 mOhm @ 10A, 10V
Vgs-th-Max-Id
4.5V @ 250μA
Puerta-Carga-Qg-Vgs
72nC @ 10V
Disipación de potencia Pd
6.25 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
11 ns
Hora de levantarse
10 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
14.9 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Resistencia a la fuente de desagüe de Rds
14 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
27 ns
Tiempo de retardo de encendido típico
21 ns
Modo de canal
Mejora
Tags
SI7178D, SI7178, SI717, SI71, SI7
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 100 V 0.014 Ohms Surface Mount Power Mosfet - PowerPAK SO-8
***ark
Mosfet, N Channel, 100V, 0.0114Ohm, 60A, Powerpak So, Full Reel; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:60A; On Resistance Rds(On):0.0114Ohm; Transistor Mounting:surface Mount Rohs Compliant: Yes
***ment14 APAC
N CHANNEL MOSFET, 100V, 60A, PowerPAK; T; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:100V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4.5V; Power Dissipation Pd:6.25W; Operating Temperature Range:-55°C to +150°C; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:60A; Junction Temperature Tj Max:150°C; Package / Case:PowerPAK; Power Dissipation Pd:104W; Power Dissipation Pd:6.25W; Rise Time:10ns; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:4.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.5V; Voltage Vgs th Min:2.5V
Parte # Mfg. Descripción Valores Precio
SI7178DP-T1-GE3
DISTI # V72:2272_07433354
Vishay IntertechnologiesTrans MOSFET N-CH 100V 14.9A 8-Pin PowerPAK SO T/R
RoHS: Compliant
1502
  • 1000:$1.3300
  • 500:$1.5300
  • 250:$1.6250
  • 100:$1.8890
  • 25:$2.2500
  • 10:$2.2750
  • 1:$2.4870
SI7178DP-T1-GE3
DISTI # SI7178DP-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 100V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
27037In Stock
  • 1000:$1.3107
  • 500:$1.5818
  • 100:$2.0338
  • 10:$2.5310
  • 1:$2.8000
SI7178DP-T1-GE3
DISTI # SI7178DP-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 100V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
27037In Stock
  • 1000:$1.3107
  • 500:$1.5818
  • 100:$2.0338
  • 10:$2.5310
  • 1:$2.8000
SI7178DP-T1-GE3
DISTI # SI7178DP-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 100V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
27000In Stock
  • 3000:$1.1847
SI7178DP-T1-GE3
DISTI # 26154696
Vishay IntertechnologiesTrans MOSFET N-CH 100V 14.9A 8-Pin PowerPAK SO T/R
RoHS: Compliant
1502
  • 1000:$1.3300
  • 500:$1.5280
  • 250:$1.6230
  • 100:$1.8840
  • 25:$2.2430
  • 10:$2.2670
  • 5:$2.4770
SI7178DP-T1-GE3
DISTI # SI7178DP-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 100V 14.9A 8-Pin PowerPAK SO T/R - Cut TR (SOS) (Alt: SI7178DP-T1-GE3)
RoHS: Compliant
Min Qty: 1
Container: Cut Tape
Americas - 1580
  • 1:$1.1900
  • 30:$1.1900
  • 75:$1.1900
  • 150:$1.1900
  • 375:$1.1900
  • 750:$1.1900
  • 1500:$1.1900
SI7178DP-T1-GE3
DISTI # SI7178DP-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 100V 14.9A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7178DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 15000
  • 3000:$1.0900
  • 6000:$1.0900
  • 12000:$1.0900
  • 18000:$1.0900
  • 30000:$1.0900
SI7178DP-T1-GE3
DISTI # SI7178DP-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 100V 14.9A 8-Pin PowerPAK SO T/R (Alt: SI7178DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 0
    SI7178DP-T1-GE3
    DISTI # 16P3830
    Vishay IntertechnologiesN CHANNEL MOSFET, 100V, 60A, PowerPAK,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:100V,On Resistance Rds(on):14mohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:4.5V , RoHS Compliant: Yes0
    • 1:$3.2000
    • 25:$2.6500
    • 50:$2.4200
    • 100:$2.1800
    • 250:$2.1100
    • 500:$1.9000
    • 1000:$1.6000
    SI7178DP-T1-GE3.
    DISTI # 28AC2161
    Vishay IntertechnologiesN-CHANNEL 100-V (D-S) MOSFET , ROHS COMPLIANT: YES15000
    • 1:$1.5200
    • 3000:$1.5200
    SI7178DP-T1-GE3
    DISTI # 70026266
    Vishay SiliconixN-CHANNEL 100-V (D-S) MOSFET
    RoHS: Compliant
    0
    • 3000:$1.8300
    • 6000:$1.8200
    • 9000:$1.7200
    SI7178DP-T1-GE3
    DISTI # 781-SI7178DP-T1-GE3
    Vishay IntertechnologiesMOSFET 100V 60A 104W 14mohm @ 10V
    RoHS: Compliant
    4439
    • 1:$3.2000
    • 10:$2.6500
    • 100:$2.1800
    • 250:$2.1100
    • 500:$1.9000
    • 1000:$1.6000
    • 3000:$1.5200
    SI7178DP-T1-GE3Vishay IntertechnologiesSingle N-Channel 100 V 0.014 Ohms Surface Mount Power Mosfet - PowerPAK SO-8
    RoHS: Compliant
    12000Reel
    • 3000:$1.2000
    SI7178DP-T1-GE3
    DISTI # C1S803601192761
    Vishay IntertechnologiesMOSFETs
    RoHS: Compliant
    1502
    • 250:$1.6250
    • 25:$2.2500
    • 1:$2.4870
    SI7178DP-T1-GE3
    DISTI # XSFP00000108896
    Vishay Siliconix 
    RoHS: Compliant
    8076
    • 3000:$2.4000
    • 8076:$2.1800
    SI7178DP-T1-GE3Vishay IntertechnologiesMOSFET 100V 60A 104W 14mohm @ 10VAmericas - 15000
      Imagen Parte # Descripción
      SI7178DP-T1-GE3

      Mfr.#: SI7178DP-T1-GE3

      OMO.#: OMO-SI7178DP-T1-GE3

      MOSFET 100V 60A 104W 14mohm @ 10V
      SI7178DP

      Mfr.#: SI7178DP

      OMO.#: OMO-SI7178DP-1190

      Nuevo y original
      SI7178DP-T3

      Mfr.#: SI7178DP-T3

      OMO.#: OMO-SI7178DP-T3-1190

      Nuevo y original
      SI7178DP-T1-GE3

      Mfr.#: SI7178DP-T1-GE3

      OMO.#: OMO-SI7178DP-T1-GE3-VISHAY

      Trans MOSFET N-CH 100V 14.9A 8-Pin PowerPAK SO T/R
      Disponibilidad
      Valores:
      Available
      En orden:
      5000
      Ingrese la cantidad:
      El precio actual de SI7178DP-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      1,53 US$
      1,53 US$
      10
      1,46 US$
      14,58 US$
      100
      1,38 US$
      138,08 US$
      500
      1,30 US$
      652,05 US$
      1000
      1,23 US$
      1 227,40 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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