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IGB50N60TATMA1

IGB50N60TATMA1
Mfr. #:
IGB50N60TATMA1
Fabricante:
Infineon Technologies
Descripción:
IGBT Transistors LOW LOSS IGBT TECH 600V 50A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IGB50N60TATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-263-3
Estilo de montaje:
SMD / SMT
Configuración:
Único
Voltaje colector-emisor VCEO Max:
600 V
Voltaje de saturación colector-emisor:
1.5 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
90 A
Pd - Disipación de energía:
333 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 175 C
Serie:
TRENCHSTOP IGBT
Embalaje:
Carrete
Marca:
Infineon Technologies
Corriente de fuga puerta-emisor:
100 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
1000
Subcategoría:
IGBT
Nombre comercial:
TRENCHSTOP
Parte # Alias:
IGB50N60T IGB5N6TXT SP000054922
Unidad de peso:
0.055063 oz
Tags
IGB50N60, IGB50, IGB5, IGB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop
Trans IGBT Chip N-CH 600V 90A 333000mW 3-Pin(2+Tab) D2PAK T/R
***ineon SCT
Infineon's 600 V, 50 A single TRENCHSTOP™ IGBT3 in a TO263 D2Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO263-3, RoHS
***ment14 APAC
IGBT,600V,50A,TO263; Transistor Type:IGBT; DC Collector Current:50A; Collector Emitter Voltage Vces:2V; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:333W
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
Parte # Mfg. Descripción Valores Precio
IGB50N60TATMA1
DISTI # V72:2272_06377206		Infineon Technologies AGTrans IGBT Chip N-CH 600V 90A 333000mW 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		730
  • 75000:$2.6130
  • 30000:$2.6370
  • 15000:$2.6610
  • 6000:$2.6850
  • 3000:$2.7090
  • 1000:$2.7330
  • 500:$2.7570
  • 250:$2.7810
  • 100:$3.0900
  • 50:$3.4340
  • 25:$3.8150
  • 10:$4.2390
  • 1:$5.4846
IGB50N60TATMA1
DISTI # IGB50N60TATMA1CT-ND		Infineon Technologies AGIGBT 600V 100A 333W TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1343In Stock
  • 500:$3.4055
  • 100:$4.0004
  • 10:$4.8830
  • 1:$5.4400
IGB50N60TATMA1
DISTI # IGB50N60TATMA1DKR-ND		Infineon Technologies AGIGBT 600V 100A 333W TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1343In Stock
  • 500:$3.4055
  • 100:$4.0004
  • 10:$4.8830
  • 1:$5.4400
IGB50N60TATMA1
DISTI # IGB50N60TATMA1TR-ND		Infineon Technologies AGIGBT 600V 100A 333W TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		1000In Stock
  • 2000:$2.6557
  • 1000:$2.7884
IGB50N60TATMA1
DISTI # 26194831		Infineon Technologies AGTrans IGBT Chip N-CH 600V 90A 333000mW 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		730
  • 3:$5.4846
IGB50N60TATMA1
DISTI # SP000054922		Infineon Technologies AGTrans IGBT Chip N-CH 600V 90A 3-Pin TO-263 T/R (Alt: SP000054922)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 10000:€1.8900
  • 6000:€2.0900
  • 4000:€2.1900
  • 2000:€2.2900
  • 1000:€2.3900
IGB50N60TXT
DISTI # IGB50N60TATMA1		Infineon Technologies AGTrans IGBT Chip N-CH 600V 100A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IGB50N60TATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 6000:$2.3900
  • 10000:$2.3900
  • 4000:$2.4900
  • 2000:$2.5900
  • 1000:$2.6900
IGB50N60TATMA1
DISTI # 13AC8998		Infineon Technologies AGTRANSISTOR, IGBT, 600V, 90A, TO-263,DC Collector Current:90A,Collector Emitter Saturation Voltage Vce(on):1.5V,Power Dissipation Pd:333W,Collector Emitter Voltage V(br)ceo:600V,Transistor Case Style:TO-263,No. of Pins:3Pins,RoHS Compliant: Yes996
  • 500:$3.1700
  • 250:$3.5500
  • 100:$3.7400
  • 50:$3.9300
  • 25:$4.1100
  • 10:$4.3000
  • 1:$5.0700
IGB50N60TATMA1
DISTI # 726-IGB50N60TATMA1		Infineon Technologies AGIGBT Transistors LOW LOSS IGBT TECH 600V 50A
RoHS: Compliant		1346
  • 1:$5.0200
  • 10:$4.2600
  • 100:$3.7000
  • 250:$3.5100
  • 500:$3.1400
  • 1000:$2.6500
  • 2000:$2.5200
IGB50N60T
DISTI # 726-IGB50N60T		Infineon Technologies AGIGBT Transistors LOW LOSS IGBT TECH 600V 50A
RoHS: Compliant		126
  • 1:$5.0200
  • 10:$4.2600
  • 100:$3.7000
  • 250:$3.5100
  • 500:$3.1400
  • 1000:$2.6500
  • 2000:$2.5200
IGB50N60TATMA1
DISTI # 2725777		Infineon Technologies AGTRANSISTOR, IGBT, 600V, 90A, TO-263
RoHS: Compliant		996
  • 500:$5.1400
  • 100:$6.0300
  • 10:$7.3600
  • 1:$8.2000
IGB50N60TATMA1
DISTI # 2725777		Infineon Technologies AGTRANSISTOR, IGBT, 600V, 90A, TO-2631159
  • 500:£2.1700
  • 250:£2.4400
  • 100:£2.5700
  • 10:£2.9500
  • 1:£4.3000
IGB50N60TATMA1
DISTI # IGB50N60T		Infineon Technologies AG600V 90A 333W DPak
RoHS: Compliant		0
  • 5:€6.0200
  • 50:€3.0200
  • 200:€2.0200
  • 500:€1.9300
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Disponibilidad
Valores:
Available
En orden:
1984
Ingrese la cantidad:
El precio actual de IGB50N60TATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
5,02 US$
5,02 US$
10
4,26 US$
42,60 US$
100
3,70 US$
370,00 US$
250
3,51 US$
877,50 US$
500
3,14 US$
1 570,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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