SI6991DQ-T1-GE3

SI6991DQ-T1-GE3
Mfr. #:
SI6991DQ-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
RF Bipolar Transistors MOSFET 30V 4.2A 1.14W 40mohm @ 10V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI6991DQ-T1-GE3 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Vishay / Siliconix
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
SI6991DQ
embalaje
Carrete
Alias ​​de parte
SI6991DQ-GE3
Unidad de peso
0.005573 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
TSSOP-8
Tecnología
Si
Número de canales
2 Channel
Configuración
Doble
Tipo transistor
2 P-Channel
Disipación de potencia Pd
830 mW
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
3.6 A
Vds-Drain-Source-Breakdown-Voltage
- 30 V
Resistencia a la fuente de desagüe de Rds
40 mOhms
Polaridad del transistor
P-Channel
Tags
SI699, SI69, SI6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descripción Valores Precio
SI6991DQ-T1-GE3
DISTI # 781-SI6991DQ-GE3
Vishay IntertechnologiesMOSFET 30V 4.2A 1.14W 40mohm @ 10V
RoHS: Compliant
0
  • 3000:$0.8240
  • 6000:$0.7940
  • 9000:$0.7630
Imagen Parte # Descripción
SI6991DQ-T1-E3

Mfr.#: SI6991DQ-T1-E3

OMO.#: OMO-SI6991DQ-T1-E3

MOSFET 30V 4.2A 0.83W
SI6991DQ-T1-GE3

Mfr.#: SI6991DQ-T1-GE3

OMO.#: OMO-SI6991DQ-T1-GE3

MOSFET 30V 4.2A 1.14W 40mohm @ 10V
SI6991DQ-T1-GE3

Mfr.#: SI6991DQ-T1-GE3

OMO.#: OMO-SI6991DQ-T1-GE3-317

RF Bipolar Transistors MOSFET 30V 4.2A 1.14W 40mohm @ 10V
SI6991DQ-T1-E3

Mfr.#: SI6991DQ-T1-E3

OMO.#: OMO-SI6991DQ-T1-E3-317

RF Bipolar Transistors MOSFET 30V 4.2A 0.83W
Disponibilidad
Valores:
Available
En orden:
1500
Ingrese la cantidad:
El precio actual de SI6991DQ-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,14 US$
1,14 US$
10
1,09 US$
10,87 US$
100
1,03 US$
103,01 US$
500
0,97 US$
486,40 US$
1000
0,92 US$
915,60 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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