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FDP18N20F

FDP18N20F
Mfr. #:
FDP18N20F
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 200V N-Channel
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDP18N20F Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
200 V
Id - Corriente de drenaje continua:
18 A
Rds On - Resistencia de la fuente de drenaje:
140 mOhms
Vgs - Voltaje puerta-fuente:
30 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
100 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
UniFET
Embalaje:
Tubo
Altura:
16.3 mm
Longitud:
10.67 mm
Serie:
FDP18N20F
Tipo de transistor:
1 N-Channel
Ancho:
4.7 mm
Marca:
ON Semiconductor / Fairchild
Otoño:
40 ns
Tipo de producto:
MOSFET
Hora de levantarse:
50 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
50 ns
Tiempo típico de retardo de encendido:
16 ns
Unidad de peso:
0.063493 oz
Tags
FDP18, FDP1, FDP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, UniFETTM, FRFET®, 200 V, 18 A, 140 mΩ, TO-220
***et Europe
Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220AB Rail
***ure Electronics
N-Channel 200 V 145 mOhm Flange Mount Mosfet - TO-220
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Parte # Mfg. Descripción Valores Precio
FDP18N20F
DISTI # 27170729		ON Semiconductor200V , 18A, 0.145 OHM, NCH MOS3000
  • 1000:$1.3900
FDP18N20F
DISTI # 32333594		ON Semiconductor200V , 18A, 0.145 OHM, NCH MOS1000
  • 1000:$0.5659
FDP18N20F
DISTI # FDP18N20F-ND		ON SemiconductorMOSFET N-CH 200V 18A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube		555In Stock
  • 5000:$0.5920
  • 3000:$0.6231
  • 1000:$0.6676
  • 100:$1.0237
  • 25:$1.2464
  • 10:$1.3130
  • 1:$1.4700
FDP18N20F
DISTI # V36:1790_06359049		ON Semiconductor200V , 18A, 0.145 OHM, NCH MOS0
  • 1000000:$0.4468
  • 500000:$0.4498
  • 100000:$0.7499
  • 10000:$1.2980
  • 1000:$1.3900
FDP18N20F
DISTI # FDP18N20F		ON SemiconductorTrans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FDP18N20F)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 10000:$0.4549
  • 6000:$0.4659
  • 4000:$0.4719
  • 2000:$0.4779
  • 1000:$0.4809
FDP18N20F
DISTI # FDP18N20F		ON SemiconductorTrans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: FDP18N20F)
Min Qty: 532
Container: Bulk		Americas - 0
  • 5320:$0.5799
  • 2660:$0.5939
  • 1596:$0.6019
  • 1064:$0.6099
  • 532:$0.6139
FDP18N20F
DISTI # FDP18N20F		ON SemiconductorTrans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220AB Rail (Alt: FDP18N20F)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€0.4569
  • 500:€0.4929
  • 100:€0.5339
  • 50:€0.5819
  • 25:€0.6409
  • 10:€0.7119
  • 1:€0.8009
FDP18N20F
DISTI # 512-FDP18N20F		ON SemiconductorMOSFET 200V N-Channel
RoHS: Compliant		1643
  • 1:$1.3900
  • 10:$1.1800
  • 100:$0.9110
  • 500:$0.8050
  • 1000:$0.6350
  • 2000:$0.6060
FDP18N20FFairchild Semiconductor CorporationPower Field-Effect Transistor, 18A I(D), 200V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		3366
  • 1000:$0.5400
  • 500:$0.5700
  • 100:$0.5900
  • 25:$0.6200
  • 1:$0.6600
FDP18N20F
DISTI # 8063545		ON SemiconductorMOSFETFAIRCHILDFDP18N20F, PK930
  • 25:£0.9260
  • 5:£1.0380
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STF11NM60ND

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STP11NM60ND

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EKXJ501ELL220MK35S

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EKMH451VNN561MA63T

Mfr.#: EKMH451VNN561MA63T

OMO.#: OMO-EKMH451VNN561MA63T-UNITED-CHEMI-CON

 Aluminum Electrolytic Capacitors - Snap In 560UF 450V
STP11NM60ND

Mfr.#: STP11NM60ND

OMO.#: OMO-STP11NM60ND-STMICROELECTRONICS

 MOSFET N-CH 600V 10A TO-220
LL4148

Mfr.#: LL4148

OMO.#: OMO-LL4148-ON-SEMICONDUCTOR

 DIODE GEN PURP 100V 200MA SOD80
Disponibilidad
Valores:
Available
En orden:
1984
Ingrese la cantidad:
El precio actual de FDP18N20F es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,39 US$
1,39 US$
10
1,18 US$
11,80 US$
100
0,91 US$
91,10 US$
500
0,80 US$
402,50 US$
1000
0,64 US$
635,00 US$
2000
0,61 US$
1 212,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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