HN3C51F-GR(TE85L,F

HN3C51F-GR(TE85L,F
Mfr. #:
HN3C51F-GR(TE85L,F
Fabricante:
Toshiba Semiconductor and Storage
Descripción:
Bipolar Transistors - BJT Trans LFreq 120V NPN NPN 0.1A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
HN3C51F-GR(TE85L,F Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
HN3C51F-GR(TE85L,F DatasheetHN3C51F-GR(TE85L,F Datasheet (P4)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Toshiba Semiconductor y almacenamiento
categoria de producto
Transistores (BJT) - Matrices
Serie
-
embalaje
Embalaje alternativo de Digi-ReelR
Paquete-Estuche
SC-74, SOT-457
Tipo de montaje
Montaje superficial
Paquete de dispositivo de proveedor
SM6
Potencia máxima
300mW
Tipo transistor
2 NPN (Dual)
Colector-corriente-Ic-Max
100mA
Voltaje-Colector-Emisor-Ruptura-Máx.
120V
DC-Current-Gain-hFE-Min-Ic-Vce
200 @ 2mA, 6V
Vce-Saturación-Max-Ib-Ic
300mV @ 1mA, 10mA
Recolector-actual-Corte-Máx.
100nA (ICBO)
Transición de frecuencia
100MHz
Tags
HN3C51F-GR(T, HN3C51F-G, HN3C51, HN3C5, HN3C, HN3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
TRANSISTOR NPN SM6 PLN
***ical
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
Parte # Mfg. Descripción Valores Precio
HN3C51F-GR(TE85L,F
DISTI # HN3C51F-GR(TE85LFTR-ND
Toshiba America Electronic ComponentsTRANS 2NPN 120V 0.1A SM6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    HN3C51F-GR(TE85L,F
    DISTI # HN3C51F-GR(TE85LFCT-ND
    Toshiba America Electronic ComponentsTRANS 2NPN 120V 0.1A SM6
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      HN3C51F-GR(TE85L,F
      DISTI # HN3C51F-GR(TE85LFDKR-ND
      Toshiba America Electronic ComponentsTRANS 2NPN 120V 0.1A SM6
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        HN3C51F-GR(TE85L,F
        DISTI # 757-HN3C51FGRTE85LF
        Toshiba America Electronic ComponentsBipolar Transistors - BJT Trans LFreq 120V NPN NPN 0.1A
        RoHS: Compliant
        0
          Imagen Parte # Descripción
          HN3C51F-GR(TE85L,F

          Mfr.#: HN3C51F-GR(TE85L,F

          OMO.#: OMO-HN3C51F-GR-TE85L-F-TOSHIBA-SEMICONDUCTOR-AND-STOR

          Bipolar Transistors - BJT Trans LFreq 120V NPN NPN 0.1A
          HN3C51F-GR(TE85LFCT-ND

          Mfr.#: HN3C51F-GR(TE85LFCT-ND

          OMO.#: OMO-HN3C51F-GR-TE85LFCT-ND-1190

          Nuevo y original
          HN3C51F-GR(TE85LFDKR-ND

          Mfr.#: HN3C51F-GR(TE85LFDKR-ND

          OMO.#: OMO-HN3C51F-GR-TE85LFDKR-ND-1190

          Nuevo y original
          HN3C51F-GR(TE85LFTR-ND

          Mfr.#: HN3C51F-GR(TE85LFTR-ND

          OMO.#: OMO-HN3C51F-GR-TE85LFTR-ND-1190

          Nuevo y original
          HN3C51F-GR

          Mfr.#: HN3C51F-GR

          OMO.#: OMO-HN3C51F-GR-1190

          Nuevo y original
          Disponibilidad
          Valores:
          Available
          En orden:
          3000
          Ingrese la cantidad:
          El precio actual de HN3C51F-GR(TE85L,F es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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          100
          0,00 US$
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          1000
          0,00 US$
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