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IRF7406TRPBF

IRF7406TRPBF
Mfr. #:
IRF7406TRPBF
Fabricante:
Infineon / IR
Descripción:
MOSFET MOSFT PCh -30V -5.8A 45mOhm 39.3nC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRF7406TRPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF7406TRPBF DatasheetIRF7406TRPBF Datasheet (P4-P6)IRF7406TRPBF Datasheet (P7-P9)
ECAD Model:
Más información:
IRF7406TRPBF más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SO-8
Número de canales:
1 Channel
Polaridad del transistor:
P-Channel
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
5.8 A
Rds On - Resistencia de la fuente de drenaje:
70 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
39.3 nC
Pd - Disipación de energía:
2.5 W
Configuración:
Único
Embalaje:
Carrete
Altura:
1.75 mm
Longitud:
4.9 mm
Tipo de transistor:
1 P-Channel
Ancho:
3.9 mm
Marca:
Infineon / IR
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
4000
Subcategoría:
MOSFET
Parte # Alias:
SP001554244
Unidad de peso:
0.019048 oz
Tags
IRF7406T, IRF7406, IRF740, IRF74, IRF7, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.045Ohm;ID -5.8A;SO-8;PD 2.5W;VGS +/-20V
***ure Electronics
Single P-Channel 30 V 0.045 Ohm 59 nC HEXFET® Power Mosfet - SOIC-8
***ineon SCT
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***ark
Mosfet Transistor; Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.8A; On Resistance Rds(On):0.07Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; No. Of Pins:8Pins Rohs Compliant: Yes
*** Stop Electro
Power Field-Effect Transistor, 6.7A I(D), 30V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
***ure Electronics
IRF7379 Series 30 V 0.045 Ohm N and P-Channel HEXFET® Power MOSFET - SOIC-8
***et
Trans MOSFET N/P-CH 30V 5.8A/4.3A 8-Pin SOIC T/R
***ineon SCT
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:5.8A; On Resistance, Rds(on):45mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SO-8 ;RoHS Compliant: Yes
***ure Electronics
Single P-Channel 30 V 2.5 W 38 nC Silicon Surface Mount Mosfet - SOIC-8
***et
Trans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R
***ark
Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:7A; On Resistance Rds(On):0.026Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V Rohs Compliant: No
***(Formerly Allied Electronics)
MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 0.07Ohm; ID -4.6A; SO-8; PD 2.5W; VGS +/-20V
*** Source Electronics
Trans MOSFET P-CH Si 30V 4.6A 8-Pin SOIC N T/R / MOSFET P-CH 30V 4.6A 8-SOIC
***eco
Transistor MOSFET P Channel 30 Volt 4.6 Amp 8 Pin SOIC
***ure Electronics
Single P-Channel 30 V 0.13 Ohm 40 nC HEXFET® Power Mosfet - SOIC-8
***ter Electronics
MOSFET, P-CHANNEL, -30V, -4.6A, 70 MOHM, 27 NC QG, SO-8
***ineon SCT
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
***ark
P CHANNEL MOSFET, -30V, 4.6A, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:4.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.03Ohm;ID 7A;SO-8;PD 2.5W;VGS +/-20V;gFS 14
***ure Electronics
Single N-Channel 30 V 0.03 Ohm 18 nC HEXFET® Power Mosfet - SOIC-8
*** Source Electronics
Trans MOSFET N-CH Si 30V 7A 8-Pin SOIC Tube / MOSFET N-CH 30V 7A 8-SOIC
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
N CHANNEL MOSFET, 30V, 7A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V; Product Range:-RoHS Compliant: Yes
***ure Electronics
N/P Channel 30 V 32/39 mO 2.9 nC Complementary Enhancement Mode Mosfet - SOIC-8
*** Source Electronics
Trans MOSFET N/P-CH 30V 5.1A/7A 8-Pin SO T/R / MOSFET N/P-CH 30V 8.1A/7A 8SOP
***roFlash
Power Field-Effect Transistor, 8.1A I(D), 30V, 0.032ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.035Ohm;ID 5.6A;SO-8;PD 1.8W;VGS +/-20V;-55
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:5.6A; Package/Case:8-uSOIC; Power Dissipation, Pd:1.8W; Drain Source On Resistance @ 10V:35mohm; Drain Source On Resistance @ 4.5V:600mohm ;RoHS Compliant: Yes
***ment14 APAC
N CHANNEL MOSFET, 30V, 5.6A, MICRO8; Tra; N CHANNEL MOSFET, 30V, 5.6A, MICRO8; Transistor Polarity:N Channel; Continuous Drain Current Id:5.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V
***(Formerly Allied Electronics)
SI4431CDY-T1-GE3 P-channel MOSFET Transistor; 7.2 A; 30 V; 8-Pin SOIC
***ure Electronics
Single P-Channel 30 V 32 mOhms Surface Mount Power Mosfet - SOIC-8
*** Stop Electro
Small Signal Field-Effect Transistor, 9A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ark
Mosfet, P Channel, -30V, -9A, Soic-8, Full Reel; Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:9A; On Resistance Rds(On):0.026Ohm; Transistor Mounting:surface Mount; No. Of Pins:8Pins Rohs Compliant: No
***emi
N-Channel PowerTrenchTM MOSFET, Logic Level, 30V, 6.5A 38mΩ
***ure Electronics
N-Channel 30 V 38 mOhm Logic Level PowerTrench Mosfet - SOIC-8
***Yang
Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC T/R - Tape and Reel
***ment14 APAC
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Source Voltage Vds:30V; On Resistance Rds(on):0.038ohm;
***rchild Semiconductor
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
***nell
MOSFET, N, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.038ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 6.5A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 40A; SMD Marking: FDS6630A; Voltage Vds: 30V; Voltage Vds Typ: 30V; Voltage Vgs Max: 1.7V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 3V; Voltage Vgs th Min: 1V
***Yang
Transistor MOSFET Array Dual N-CH 30V 6A 8-Pin SOIC T/R - Tape and Reel
***emi
Power MOSFET 30V 6A 32 mOhm Dual N-Channel SO-8
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6A; On Resistance Rds(On):0.024Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Product Range:-Rohs Compliant: Yes
***ure Electronics
ZXMP3A16 Series 30 V 0.04 Ohm P-Channel Enhancement Mode MOSFET - SOIC-8
***et
Trans MOSFET P-CH 30V 6.7A 8-Pin SOIC T/R
***(Formerly Allied Electronics)
MOSFET P-Channel 30V 6.7A SOIC8
***ark
Mosfet, P-Ch, 30V, 6.7A, Soic Rohs Compliant: Yes
***des Inc SCT
P-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
***S
French Electronic Distributor since 1988
***(Formerly Allied Electronics)
SI4620DY-T1-GE3 N-channel MOSFET Transistor; 7.5 A; 30 V; 8-Pin SOIC
***ical
Trans MOSFET N-CH 30V 6A 8-Pin SOIC N T/R
***S
French Electronic Distributor since 1988
***emi
Power MOSFET 30V 6A 32 mOhm Dual N-Channel SO-8 FETKY
***Yang
Trans MOSFET N-CH 30V 6A 8-Pin SOIC N T/R - Tape and Reel
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel / Schottky Diode; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:6A; On Resistance, Rds(on):0.024ohm; Rds(on) Test Voltage, Vgs:10V ;RoHS Compliant: Yes
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
Parte # Mfg. Descripción Valores Precio
IRF7406TRPBF
DISTI # V72:2272_13889775		Infineon Technologies AGTrans MOSFET P-CH 30V 5.8A 8-Pin SOIC T/R359
  • 250:$0.4460
  • 100:$0.5371
  • 25:$0.6589
  • 10:$0.7084
  • 1:$0.7573
IRF7406TRPBF
DISTI # IRF7406PBFCT-ND		Infineon Technologies AGMOSFET P-CH 30V 5.8A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3737In Stock
  • 1000:$0.5141
  • 500:$0.6512
  • 100:$0.8397
  • 10:$1.0620
  • 1:$1.2000
IRF7406TRPBF
DISTI # IRF7406PBFDKR-ND		Infineon Technologies AGMOSFET P-CH 30V 5.8A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3737In Stock
  • 1000:$0.5141
  • 500:$0.6512
  • 100:$0.8397
  • 10:$1.0620
  • 1:$1.2000
IRF7406TRPBF
DISTI # IRF7406PBFTR-ND		Infineon Technologies AGMOSFET P-CH 30V 5.8A 8-SOIC
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		On Order
  • 4000:$0.4658
IRF7406TRPBF
DISTI # 31299294		Infineon Technologies AGTrans MOSFET P-CH 30V 5.8A 8-Pin SOIC T/R8000
  • 4000:$0.3552
IRF7406TRPBF
DISTI # 26755959		Infineon Technologies AGTrans MOSFET P-CH 30V 5.8A 8-Pin SOIC T/R359
  • 250:$0.4460
  • 100:$0.5371
  • 25:$0.6589
  • 21:$0.7084
IRF7406TRPBF
DISTI # IRF7406TRPBF		Infineon Technologies AGTrans MOSFET P-CH 30V 5.8A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7406TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 0
  • 4000:$0.3479
  • 8000:$0.3359
  • 16000:$0.3229
  • 24000:$0.3129
  • 40000:$0.3069
IRF7406TRPBF
DISTI # IRF7406TRPBF		Infineon Technologies AGTrans MOSFET P-CH 30V 5.8A 8-Pin SOIC T/R (Alt: IRF7406TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Asia - 0
  • 4000:$0.3000
  • 8000:$0.2917
  • 12000:$0.2838
  • 20000:$0.2763
  • 40000:$0.2727
  • 100000:$0.2692
  • 200000:$0.2658
IRF7406TRPBF
DISTI # 13AC9194		Infineon Technologies AGMOSFET, P-CH, -30V, -5.8A, SOIC,Transistor Polarity:P Channel,Continuous Drain Current Id:-5.8A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.045ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1V,Power RoHS Compliant: Yes1469
  • 1:$1.0000
  • 25:$0.8470
  • 50:$0.7490
  • 100:$0.6510
  • 250:$0.6130
  • 500:$0.5750
  • 1000:$0.4540
IRF7406TRPBF
DISTI # 40M7952		Infineon Technologies AGMOSFET Transistor,Transistor Polarity:P Channel,Continuous Drain Current Id:-2.8A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.07ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-,Power Dissipation Pd:2.5W RoHS Compliant: Yes1385
  • 1:$1.1000
  • 25:$0.9320
  • 50:$0.8240
  • 100:$0.7160
  • 250:$0.6740
  • 500:$0.6330
  • 1000:$0.4990
IRF7406TRPBF.
DISTI # 27AC6897		Infineon Technologies AGMOSFET Transistor,Transistor Polarity:P Channel,Continuous Drain Current Id:-2.8A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.07ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-,Power Dissipation Pd:2.5W RoHS Compliant: Yes0
  • 1:$0.3480
  • 8000:$0.3360
  • 16000:$0.3230
  • 24000:$0.3130
  • 40000:$0.3070
IRF7406TRPBF
DISTI # 70017703		Infineon Technologies AGMOSFET,Power,P-Ch,VDSS -30V,RDS(ON) 0.045Ohm,ID -5.8A,SO-8,PD 2.5W,VGS +/-20V
RoHS: Compliant		0
  • 4000:$0.9200
IRF7406TRPBF
DISTI # 942-IRF7406TRPBF		Infineon Technologies AGMOSFET MOSFT PCh -30V -5.8A 45mOhm 39.3nC
RoHS: Compliant		10552
  • 1:$1.0000
  • 10:$0.8470
  • 100:$0.6510
  • 500:$0.5750
  • 1000:$0.4540
IRF7406TRPBFInfineon Technologies AGSingle P-Channel 30 V 0.045 Ohm 39.3 nC HEXFET Power Mosfet - SOIC-8
RoHS: Compliant		4000Reel
  • 4000:$0.3700
IRF7406TRPBFInfineon Technologies AGSingle P-Channel 30 V 0.045 Ohm 39.3 nC HEXFET Power Mosfet - SOIC-8
RoHS: Compliant		57Cut Tape/Mini-Reel
  • 1:$0.5700
  • 100:$0.4750
  • 250:$0.4600
  • 500:$0.4450
  • 1500:$0.4100
IRF7406TRPBF
DISTI # 9154951P		Infineon Technologies AGMOSFET P-CHANNEL HEXFET 30V 5.8A SOIC8, RL6280
  • 100:£0.3530
  • 400:£0.3110
  • 1000:£0.2860
IRF7406TRPBFInternational Rectifier6.7 A, 30 V, 0.045 ohm, P-CHANNEL, Si, POWER, MOSFET, MS-012AA612
  • 137:$0.3080
  • 31:$0.4400
  • 1:$0.8800
IRF7406TRPBFInternational Rectifier6.7 A, 30 V, 0.045 ohm, P-CHANNEL, Si, POWER, MOSFET, MS-012AA1260
  • 636:$0.2730
  • 115:$0.3150
  • 1:$1.0500
IRF7406TRPBFInfineon Technologies AG 1767
    IRF7406TRPBFInternational Rectifier 1575
    • 7:$0.7875
    • 27:$0.5119
    • 99:$0.2953
    • 340:$0.2520
    • 736:$0.2205
    IRF7406TRPBFInternational Rectifier 872
      IRF7406TRPBF
      DISTI # C1S322000484380      		Infineon Technologies AGTrans MOSFET P-CH 30V 5.8A 8-Pin SOIC T/R
      RoHS: Compliant      		359
      • 250:$0.4460
      • 100:$0.5371
      • 25:$0.6589
      • 10:$0.7084
      IRF7406TRPBF
      DISTI # C1S322000484399      		Infineon Technologies AGTrans MOSFET P-CH 30V 5.8A 8-Pin SOIC T/R
      RoHS: Compliant      		8000
      • 4000:$0.3840
      IRF7406TRPBF
      DISTI # 2725903      		Infineon Technologies AGMOSFET, P-CH, -30V, -5.8A, SOIC
      RoHS: Compliant      		1469
      • 1:$1.5900
      • 10:$1.3500
      • 100:$1.0400
      • 500:$0.9110
      • 1000:$0.7190
      • 4000:$0.6380
      • 8000:$0.6150
      IRF7406TRPBF
      DISTI # 2725903      		Infineon Technologies AGMOSFET, P-CH, -30V, -5.8A, SOIC
      RoHS: Compliant      		1694
      • 5:£0.4190
      • 25:£0.3880
      • 100:£0.3570
      • 250:£0.3140
      • 500:£0.3020
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      Mfr.#: TZM5223B-GS08

      OMO.#: OMO-TZM5223B-GS08

      		 Zener Diodes 2.7 Volt 0.5 Watt
      TZM5230B-GS08

      Mfr.#: TZM5230B-GS08

      OMO.#: OMO-TZM5230B-GS08

      		 Zener Diodes 4.7 Volt 0.5 Watt
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      Mfr.#: TZM5231B-GS08

      OMO.#: OMO-TZM5231B-GS08

      		 Zener Diodes 5.1 Volt 0.5 Watt
      ZM4740A-GS08

      Mfr.#: ZM4740A-GS08

      OMO.#: OMO-ZM4740A-GS08

      		 Zener Diodes 10 Volt 1 Watt 5%
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      Mfr.#: FDLL4148

      OMO.#: OMO-FDLL4148

      		 Diodes - General Purpose, Power, Switching 100V Io/200mA T/R
      V33MLA1206NH

      Mfr.#: V33MLA1206NH

      OMO.#: OMO-V33MLA1206NH

      		 Varistors 33V 180A 500pF
      MAX933ESA+

      Mfr.#: MAX933ESA+

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      Disponibilidad
      Valores:
      Available
      En orden:
      1992
      Ingrese la cantidad:
      El precio actual de IRF7406TRPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,99 US$
      0,99 US$
      10
      0,85 US$
      8,47 US$
      100
      0,65 US$
      65,10 US$
      500
      0,58 US$
      287,50 US$
      1000
      0,45 US$
      454,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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