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FF11MR12W1M1B11BOMA1

FF11MR12W1M1B11BOMA1
Mfr. #:
FF11MR12W1M1B11BOMA1
Fabricante:
Infineon Technologies
Descripción:
Discrete Semiconductor Modules
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FF11MR12W1M1B11BOMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
FF11MR12W1M1B11BOMA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Módulos de semiconductores discretos
RoHS:
Y
Producto:
Módulos MOSFET de potencia
Escribe:
Módulo EasyDUAL
Vf - Voltaje directo:
4 V
Vgs - Voltaje puerta-fuente:
- 10 V, 20 V
Estilo de montaje:
Presione Ajustar
Paquete / Caja:
Módulo
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 150 C
Embalaje:
Bandeja
Configuración:
Doble
Marca:
Infineon Technologies
Polaridad del transistor:
Canal N
Otoño:
28 ns
Id - Corriente de drenaje continua:
100 A
Voltaje de suministro operativo:
-
Pd - Disipación de energía:
20 mW
Tipo de producto:
Módulos de semiconductores discretos
Rds On - Resistencia de la fuente de drenaje:
11 mOhms
Hora de levantarse:
16.5 ns
Cantidad de paquete de fábrica:
24
Subcategoría:
Módulos de semiconductores discretos
Nombre comercial:
CoolSIC
Tiempo de retardo de apagado típico:
64.5 ns
Tiempo típico de retardo de encendido:
25 ns
Vds - Voltaje de ruptura de drenaje-fuente:
1200 V
Vgs th - Voltaje umbral puerta-fuente:
3.5 V
Parte # Alias:
FF11MR12W1M1_B11 SP001602204
Tags
FF11, FF1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Japan
Transistor MOSFET Array Dual N-CH 1200V 100A 21-Pin AG-Easy1BM Tray
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Multilayer Ceramic Capacitors MLCC - SMD/SMT 0201 9.5pF 50volts C0G +/-0.1pF
***nell
MOSFET MODULE, N-CH, 1.2KV, 100A; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 1.2kV; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltag; Available until stocks are exhausted
***ark
Mosfet Mod, N-Ch, 1.2Kv, 100A, 0.02W; Mosfet Module Configuration:Half Bridge; Channel Type:Dual N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:1.2Kv; No. Of Pins:22Pins; Rds(On) Test Voltage:- Rohs Compliant: Yes |Infineon FF11MR12W1M1B11BOMA1
***ineon
EasyDUAL 1B 1200 V / 23 m halfbridge module with CoolSiC MOSFET, NTC and PressFIT Contact Technology | Summary of Features: High current density; Best in class switching and conduction losses; Low inductive design; Integrated NTC temperature sensor; PressFIT contact technology; RoHS-compliant modules | Benefits: Highest efficiency for reduced cooling effort; Higher frequency operation; Increased power density; Optimized customers development cycle time and cost | Target Applications: drives; solar; ups; battery-charger
1200V CoolSiC™ Modules
Infineon Technologies 1200V CoolSiC™ Modules are Silicon Carbide (SiC) MOSFET modules that offer good levels of efficiency and system flexibility. These modules come with Near Threshold Circuits (NTC) and PressFIT contact technology. The CoolSiC modules feature high current density, best in class switching and conduction losses, and low inductive design. These modules provide high-frequency operation, increased power density, and optimized development cycle time and cost.
Gen 5 1200V CoolSiC™ Schottky Diodes
Infineon Gen 5 1200V CoolSiC™ Schottky Diodes are offered with forward currents up to 40A for TO-247, 20A in TO-220 and 10A in DPAK. CoolSiC Diodes target solar inverters, UPS, 3P SMPS, energy storage and motor drives applications. With reduction of forward voltage and temperature dependency, the diodes bring a new level of system efficiency.
Parte # Mfg. Descripción Valores Precio
FF11MR12W1M1B11BOMA1
DISTI # V99:2348_18204869		Infineon Technologies AGLOW POWER EASY41
  • 1:$187.1699
FF11MR12W1M1B11BOMA1
DISTI # FF11MR12W1M1B11BOMA1-ND		Infineon Technologies AGMOSFET 2 N-CH 1200V 100A MODULE
RoHS: Compliant
Min Qty: 1
Container: Tray		20In Stock
  • 1:$155.8300
FF11MR12W1M1B11BOMA1
DISTI # 32441266		Infineon Technologies AGLOW POWER EASY41
  • 1:$187.1699
FF11MR12W1M1B11BOMA1
DISTI # 32371310		Infineon Technologies AGLOW POWER EASY16
  • 1:$229.2812
FF11MR12W1M1B11BOMA1
DISTI # SP001602204		Infineon Technologies AGLOW POWER EASY (Alt: SP001602204)
RoHS: Compliant
Min Qty: 1		Europe - 43
  • 1000:€131.2900
  • 500:€133.1900
  • 100:€134.6900
  • 50:€137.0900
  • 25:€144.2900
  • 10:€145.8900
  • 1:€150.3900
FF11MR12W1M1B11BOMA1
DISTI # FF11MR12W1M1B11BOMA1		Infineon Technologies AGLOW POWER EASY - Trays (Alt: FF11MR12W1M1B11BOMA1)
RoHS: Compliant
Min Qty: 24
Container: Tray		Americas - 0
  • 240:$132.1900
  • 144:$135.3900
  • 96:$138.8900
  • 48:$142.4900
  • 24:$144.2900
FF11MR12W1M1B11BOMA1
DISTI # FF11MR12W1M1_B11		Infineon Technologies AGLOW POWER EASY (Alt: FF11MR12W1M1_B11)
RoHS: Not Compliant
Min Qty: 24		Asia - 0
    FF11MR12W1M1B11BOMA1
    DISTI # 24AC8569    		Infineon Technologies AGMOSFET MODULE, N-CH, 1.2KV, 100A,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:1.2kV,On Resistance Rds(on):0.011ohm,Rds(on) Test Voltage Vgs:-,Threshold Voltage Vgs:4.5V,Power RoHS Compliant: Yes14
    • 25:$150.7900
    • 10:$152.9300
    • 5:$156.8300
    • 1:$160.7000
    FF11MR12W1M1B11BOMA1
    DISTI # 726-FF11MR12W1M1B11    		Infineon Technologies AGDiscrete Semiconductor Modules
    RoHS: Compliant    		0
    • 1:$159.1100
    • 5:$155.2800
    • 10:$151.4200
    • 25:$149.3000
    FF11MR12W1M1B11BOMA1Infineon Technologies AGFF11MR12W1M1_B11 1200 V 100A EasyDUAL Module with CoolSiC Mosfet / PressFIT/NTC
    RoHS: Compliant    		24Tray
    • 1:$155.2800
    • 2:$148.3900
    • 5:$139.7500
    FF11MR12W1M1B11BOMA1
    DISTI # 2771412    		Infineon Technologies AGMOSFET MODULE, N-CH, 1.2KV, 100A9
    • 10:£109.0000
    • 5:£113.0000
    • 1:£116.0000
    FF11MR12W1M1B11BOMA1
    DISTI # XSFP00000171367    		Infineon Technologies AG 
    RoHS: Compliant    		19 in Stock0 on Order
    • 19:$207.0400
    • 1:$221.8300
    FF11MR12W1M1B11BOMA1
    DISTI # XSKDRABV0048485    		Infineon Technologies AG 
    RoHS: Compliant    		25 in Stock0 on Order
    • 25:$196.2700
    • 24:$210.2800
    FF11MR12W1M1B11BOMA1
    DISTI # 2771412    		Infineon Technologies AGMOSFET MODULE, N-CH, 1.2KV, 100A
    RoHS: Compliant    		9
    • 1:$237.7900
    Imagen Parte # Descripción
    FF11MR12W1M1B11BOMA1

    Mfr.#: FF11MR12W1M1B11BOMA1

    OMO.#: OMO-FF11MR12W1M1B11BOMA1

    		 Discrete Semiconductor Modules
    FF11MR12W1M1B11BOMA1

    Mfr.#: FF11MR12W1M1B11BOMA1

    OMO.#: OMO-FF11MR12W1M1B11BOMA1-INFINEON-TECHNOLOGIES

    		 MOSFET 2 N-CH 1200V 100A MODULE
    Disponibilidad
    Valores:
    Available
    En orden:
    1000
    Ingrese la cantidad:
    El precio actual de FF11MR12W1M1B11BOMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    159,11 US$
    159,11 US$
    5
    155,28 US$
    776,40 US$
    10
    151,42 US$
    1 514,20 US$
    25
    149,30 US$
    3 732,50 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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