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SIHP24N65E-E3

SIHP24N65E-E3
Mfr. #:
SIHP24N65E-E3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 650V Vds 30V Vgs TO-220AB
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHP24N65E-E3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHP24N65E-E3 DatasheetSIHP24N65E-E3 Datasheet (P4-P6)SIHP24N65E-E3 Datasheet (P7-P8)
ECAD Model:
Más información:
SIHP24N65E-E3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220AB-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
650 V
Id - Corriente de drenaje continua:
24 A
Rds On - Resistencia de la fuente de drenaje:
145 mOhms
Vgs th - Voltaje umbral puerta-fuente:
4 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
81 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
250 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Altura:
15.49 mm
Longitud:
10.41 mm
Serie:
E
Ancho:
4.7 mm
Marca:
Vishay / Siliconix
Otoño:
69 ns
Tipo de producto:
MOSFET
Hora de levantarse:
84 ns
Cantidad de paquete de fábrica:
50
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
70 ns
Tiempo típico de retardo de encendido:
24 ns
Unidad de peso:
0.211644 oz
Tags
SIHP24N, SIHP24, SIHP2, SIHP, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N CH, 650V, 24A, TO-220AB; Transistor Polarity:N Channel; Continuous Dra
***ure Electronics
E-Series N-Channel 650 V 0.145 O 122 nC Flange Mount Power Mosfet - TO-220AB
***et Europe
Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-220AB
***Components
MOSFET N-Channel 650V 24A TO220AB
***i-Key
MOSFET N-CH 650V 24A TO220AB
***
N-CH 650V TO-220
***ment14 APAC
MOSFET, N CH, 650V, 24A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.12ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:250W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220AB; No. of Pins:3; MSL:MSL 1 - Unlimited; Voltage Vgs Max:30V
***nell
MOSFET, N CH, 650V, 24A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.12ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:250W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220AB; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descripción Valores Precio
SIHP24N65E-E3
DISTI # V36:1790_09218741		Vishay IntertechnologiesTrans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-220AB
RoHS: Compliant		0
  • 1000:$2.7950
SIHP24N65E-E3
DISTI # SIHP24N65E-E3-ND		Vishay SiliconixMOSFET N-CH 650V 24A TO220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		925In Stock
  • 3000:$2.8628
  • 1000:$3.0135
  • 100:$4.1974
  • 25:$4.8432
  • 10:$5.1230
  • 1:$5.7000
SIHP24N65E-E3
DISTI # SIHP24N65E-E3		Vishay IntertechnologiesTrans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: SIHP24N65E-E3)
RoHS: Not Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 10000:$2.5900
  • 4000:$2.6900
  • 6000:$2.6900
  • 2000:$2.7900
  • 1000:$2.8900
SIHP24N65E-GE3
DISTI # 78-SIHP24N65E-GE3		Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs TO-220AB
RoHS: Compliant		167
  • 1:$5.7400
  • 10:$4.7500
  • 100:$3.9100
  • 250:$3.7900
SIHP24N65E-E3
DISTI # 781-SIHP24N65E-E3		Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs TO-220AB
RoHS: Compliant		0
  • 1:$5.7400
  • 10:$4.7500
  • 100:$3.9100
  • 250:$3.7900
  • 500:$3.4000
  • 1000:$2.8600
  • 2500:$2.7200
SIHP24N65E-E3Vishay Intertechnologies 264
    SIHP24N65E-E3
    DISTI # 2079774    		Vishay IntertechnologiesMOSFET, N CH, 650V, 24A, TO-220AB
    RoHS: Compliant    		807
    • 500:£1.8900
    • 250:£1.9000
    • 100:£1.9100
    • 10:£1.9200
    • 1:£1.9300
    SIHP24N65E-GE3Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs TO-220AB
    RoHS: Compliant    		Americas -
      SIHP24N65E-E3Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs TO-220AB
      RoHS: Compliant      		Americas -
        Imagen Parte # Descripción
        SIHP240N60E-GE3

        Mfr.#: SIHP240N60E-GE3

        OMO.#: OMO-SIHP240N60E-GE3

        		 MOSFET 600V Vds; +/-30V Vgs TO-220AB
        SIHP24N65E-GE3

        Mfr.#: SIHP24N65E-GE3

        OMO.#: OMO-SIHP24N65E-GE3

        		 MOSFET 650V Vds 30V Vgs TO-220AB
        SIHP24N65E-E3

        Mfr.#: SIHP24N65E-E3

        OMO.#: OMO-SIHP24N65E-E3

        		 MOSFET 650V Vds 30V Vgs TO-220AB
        SIHP24N65EF-GE3

        Mfr.#: SIHP24N65EF-GE3

        OMO.#: OMO-SIHP24N65EF-GE3

        		 MOSFET 650V Vds 30V Vgs TO-220AB
        SIHP24N65E-GE3

        Mfr.#: SIHP24N65E-GE3

        OMO.#: OMO-SIHP24N65E-GE3-VISHAY

        		 IGBT Transistors MOSFET 650V 145mOhm@10V 24A N-Ch E-SRS
        SIHP24N65EF-GE3

        Mfr.#: SIHP24N65EF-GE3

        OMO.#: OMO-SIHP24N65EF-GE3-VISHAY

        		 RF Bipolar Transistors MOSFET 650V 156mOhms@10V 24A N-Ch EF-SRS
        SIHP240N60E-GE3

        Mfr.#: SIHP240N60E-GE3

        OMO.#: OMO-SIHP240N60E-GE3-VISHAY

        		 MOSFET N-CHAN 600V TO-220AB
        SIHP24N65E-E3

        Mfr.#: SIHP24N65E-E3

        OMO.#: OMO-SIHP24N65E-E3-VISHAY

        		 MOSFET N-CH 650V 24A TO220AB
        Disponibilidad
        Valores:
        Available
        En orden:
        1500
        Ingrese la cantidad:
        El precio actual de SIHP24N65E-E3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        5,74 US$
        5,74 US$
        10
        4,75 US$
        47,50 US$
        100
        3,91 US$
        391,00 US$
        250
        3,79 US$
        947,50 US$
        500
        3,40 US$
        1 700,00 US$
        1000
        2,86 US$
        2 860,00 US$
        2500
        2,72 US$
        6 800,00 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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