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STAC0912-250

STAC0912-250
Mfr. #:
STAC0912-250
Fabricante:
STMicroelectronics
Descripción:
RF MOSFET Transistors 250W 36V 960-1215 MHz LDMOS TRANSISTOR
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STAC0912-250 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
STAC0912-250 más información STAC0912-250 Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
Transistores RF MOSFET
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
80 V
Ganar:
16 dB
Potencia de salida:
285 W
Temperatura mínima de funcionamiento:
- 65 C
Temperatura máxima de funcionamiento:
+ 200 C
Estilo de montaje:
Montaje con tornillo
Paquete / Caja:
STAC265B
Frecuencia de operación:
960 MHz to 1215 MHz
Serie:
STAC0912-250
Escribe:
RF Power MOSFET
Marca:
STMicroelectronics
Número de canales:
1 Channel
Pd - Disipación de energía:
928 W
Tipo de producto:
Transistores RF MOSFET
Cantidad de paquete de fábrica:
90
Subcategoría:
MOSFET
Vgs - Voltaje puerta-fuente:
20 V
Tags
STAC, STA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
TRANSISTOR, 250W, 36V, 960-1215 MHZ, N-channel enhancement-mode lateral field-effect
***icroelectronics
250W 36V 960-1215 MHz LDMOS TRANSISTOR
***r Electronics
RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***va Crawler
LDMOS avionics radar transistor
Parte # Mfg. Descripción Valores Precio
STAC0912-250
DISTI # V36:1790_17750721		STMicroelectronicsTrans RF MOSFET N-CH 80V 3-Pin STAC265B Tube0
  • 90000:$139.3800
  • 45000:$139.3900
  • 9000:$143.5000
  • 900:$154.3900
  • 90:$156.4600
STAC0912-250
DISTI # STAC0912-250		STMicroelectronicsTRANSISTOR, 250W, 36V, 960-1215 MHZ, N-channel enhancement-mode lateral field-effect - Bulk (Alt: STAC0912-250)
RoHS: Not Compliant
Min Qty: 15
Container: Bulk		Americas - 0
  • 150:$146.7900
  • 90:$149.8900
  • 60:$156.7900
  • 30:$164.1900
  • 15:$172.3900
STAC0912-250
DISTI # 02AH7036		STMicroelectronicsPTD WBG & POWER RF0
  • 1:$143.7500
STAC0912-250
DISTI # 511-STAC0912-250		STMicroelectronicsRF MOSFET Transistors 250W 36V 960-1215 MHz LDMOS TRANSISTOR0
  • 1:$166.7300
  • 5:$162.7200
  • 10:$158.6800
  • 25:$156.4600
STAC0912-250
DISTI # STAC0912-250		STMicroelectronicsRF POWER TRANSISTOR
RoHS: Compliant		0
  • 90:$160.0700
  • 100:$157.9300
Imagen Parte # Descripción
STAC0912-250

Mfr.#: STAC0912-250

OMO.#: OMO-STAC0912-250

 RF MOSFET Transistors 250W 36V 960-1215 MHz LDMOS TRANSISTOR
STAC0912-250

Mfr.#: STAC0912-250

OMO.#: OMO-STAC0912-250-1152

 Trans RF MOSFET N-CH 80V 3-Pin STAC265B Tube
Disponibilidad
Valores:
Available
En orden:
2000
Ingrese la cantidad:
El precio actual de STAC0912-250 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
166,73 US$
166,73 US$
5
162,72 US$
813,60 US$
10
158,68 US$
1 586,80 US$
25
156,46 US$
3 911,50 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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