AS4C64M16D1A-6BINTR

AS4C64M16D1A-6BINTR
Mfr. #:
AS4C64M16D1A-6BINTR
Fabricante:
Alliance Memory
Descripción:
DRAM 1G 64Mx16 166MHz 2.5V DDR1 IT
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
AS4C64M16D1A-6BINTR Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
AS4C64M16D1A-6BINTR más información
Atributo del producto
Valor de atributo
Fabricante:
Memoria de la Alianza
Categoria de producto:
DRACMA
RoHS:
Y
Escribe:
SDRAM - DDR
Ancho del bus de datos:
16 bit
Organización:
64 M x 16
Paquete / Caja:
FBGA-60
Tamaño de la memoria:
1 Gbit
Frecuencia máxima de reloj:
166 MHz
Tiempo de acceso:
0.7 ns
Voltaje de suministro - Máx:
2.7 V
Voltaje de suministro - Min:
2.3 V
Corriente de suministro - Máx .:
180 mA
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 85 C
Serie:
AS4C64M16D1A
Embalaje:
Carrete
Marca:
Memoria de la Alianza
Estilo de montaje:
SMD / SMT
Sensible a la humedad:
Yes
Tipo de producto:
DRACMA
Cantidad de paquete de fábrica:
1000
Subcategoría:
Memoria y almacenamiento de datos
Tags
AS4C64M16D1A, AS4C64M16D1, AS4C64M16D, AS4C64M1, AS4C6, AS4C, AS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
DDR1 Synchronous DRAM
Alliance Memory DDR1 Synchronous DRAM is a high-speed CMOS double data rate synchronous DRAM. It is internally configured with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edges of CK and CK. Read and write accesses to the SDRAM are burst oriented. The Accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.
Imagen Parte # Descripción
AS4C64M16D2B-25BCN

Mfr.#: AS4C64M16D2B-25BCN

OMO.#: OMO-AS4C64M16D2B-25BCN

DRAM 1G, 1.8V, 64M x 16 DDR2 C Temp
AS4C64M16D2-25BCNTR

Mfr.#: AS4C64M16D2-25BCNTR

OMO.#: OMO-AS4C64M16D2-25BCNTR

DRAM 1G, 1.8V, 64M x 16 DDR2
AS4C64M16D3LA-12BAN

Mfr.#: AS4C64M16D3LA-12BAN

OMO.#: OMO-AS4C64M16D3LA-12BAN

DRAM 1G 1.35V 800MHz 64M x 16 DDR3
AS4C64M16D1-6TINTR

Mfr.#: AS4C64M16D1-6TINTR

OMO.#: OMO-AS4C64M16D1-6TINTR-ALLIANCE-MEMORY

DDR SDRAM 1GB 64M x 16 2.5V 66pin TSOP II
AS4C64M16D3-12BANTR

Mfr.#: AS4C64M16D3-12BANTR

OMO.#: OMO-AS4C64M16D3-12BANTR-ALLIANCE-MEMORY

IC DRAM 1G PARALLEL 96FBGA Automotive, AEC-Q100
AS4C64M16MD1-6BCN

Mfr.#: AS4C64M16MD1-6BCN

OMO.#: OMO-AS4C64M16MD1-6BCN-ALLIANCE-MEMORY

DRAM 1G 1.8V 166Mhz 64M x 16 Mobile DDR
AS4C64M16D3L-12BIN

Mfr.#: AS4C64M16D3L-12BIN

OMO.#: OMO-AS4C64M16D3L-12BIN-ALLIANCE-MEMORY

DRAM 1G 1.35V 1600Mhz 64M x 16 DDR3
AS4C64M16D3LB-12BAN

Mfr.#: AS4C64M16D3LB-12BAN

OMO.#: OMO-AS4C64M16D3LB-12BAN-ALLIANCE-MEMORY

IC DRAM 1G PARALLEL 96FBGA Automotive, AEC-Q100
AS4C64M16D3LB-12BCNTR

Mfr.#: AS4C64M16D3LB-12BCNTR

OMO.#: OMO-AS4C64M16D3LB-12BCNTR-ALLIANCE-MEMORY

IC DRAM 1G PARALLEL 96FBGA
AS4C64M16MD2A-25BCN

Mfr.#: AS4C64M16MD2A-25BCN

OMO.#: OMO-AS4C64M16MD2A-25BCN-ALLIANCE-MEMORY

IC DRAM 1G PARALLEL 134FBGA
Disponibilidad
Valores:
Available
En orden:
1000
Ingrese la cantidad:
El precio actual de AS4C64M16D1A-6BINTR es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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