SIA416DJ-T1-GE3

Mfr. #:: SIA416DJ-T1-GE3
Fabricante:: Vishay / Siliconix
Descripción:: MOSFET 100V Vds 20V Vgs PowerPAK SC-70
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: SIA416DJ-T1-GE3 Ficha de datos
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HTML Datasheet:: SIA416DJ-T1-GE3 Datasheet SIA416DJ-T1-GE3 Datasheet (P4-P6)SIA416DJ-T1-GE3 Datasheet (P7-P9)
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Atributo del producto
Valor de atributo

Fabricante:: Vishay

Categoria de producto:: MOSFET

RoHS:: Y

Tecnología:: Si

Estilo de montaje:: SMD / SMT

Paquete / Caja:: PowerPAK-SC70-6

Número de canales:: 1 Channel

Polaridad del transistor:: Canal N

Vds - Voltaje de ruptura de drenaje-fuente:: 100 V

Id - Corriente de drenaje continua:: 11.3 A

Rds On - Resistencia de la fuente de drenaje:: 68 mOhms

Vgs th - Voltaje umbral puerta-fuente:: 1.6 V

Vgs - Voltaje puerta-fuente:: 20 V

Qg - Carga de puerta:: 10 nC

Temperatura mínima de funcionamiento:: - 55 C

Temperatura máxima de funcionamiento:: + 150 C

Pd - Disipación de energía:: 19 W

Configuración:: Único

Modo de canal:: Mejora

Nombre comercial:: TrenchFET, PowerPAK

Embalaje:: Carrete

Serie:: SIA

Tipo de transistor:: 1 N-Channel

Marca:: Vishay / Siliconix

Transconductancia directa - Mín .:: 8 S

Otoño:: 10 ns

Tipo de producto:: MOSFET

Hora de levantarse:: 13 ns

Cantidad de paquete de fábrica:: 3000

Subcategoría:: MOSFET

Tiempo de retardo de apagado típico:: 10 ns

Tiempo típico de retardo de encendido:: 5 ns

Tags: SIA41, SIA4, SIA

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We provide 90-360 days warranty.

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SIA416DJ-T1-GE3 Descripción

***ied Electronics & Automation: SIA416DJ-T1-GE3 N-channel MOSFET Transistor; 11.3 A; 100 V; 6-Pin PowerPAK SC-70

***Components: In a Pack of 20, N-Channel MOSFET, 11.3 A, 100 V, 6-Pin PowerPAK SC-70 Vishay SIA416DJ-T1-GE3

***ure Electronics: N-Channel 100 V 83 mOhm 3.5 W TrenchFET Power Mosfet - PowerPAK SC-70-6L

***et Europe: Trans MOSFET N-CH 100V 4.8A 6-Pin PowerPAK SC-70 T/R

***ical: Trans MOSFET N-CH 100V 4.8A

***i-Key: MOSFET N-CH 100V 11.3A SC70-6L

***: N-CH 100V (D-S) MOSFET

***ronik: N-CH 100V 11,3A 68mOhm PPAK

***ark: Transistor Polarity:n Channel; Continuous Drain Current Id:4.8A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.068Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:19W; No. Of Pins:6Pins Rohs Compliant: No

***nell: MOSFET, N-CH, 100V, 11.3A, PPAKSC70-6; Transistor Polarity:N Channel; Continuous Drain Current Id:11.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.068ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:19W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SC70; No. of Pins:6; MSL:MSL 1 - Unlimited

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 100V, 11.3A, PPAKSC70-6; Transistor Polarity:N Channel; Continuous Drain Current Id:11.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.068ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:19W; Transistor Case Style:PowerPAK SC70; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; Operating Temperature Min:-55°C

Market price

Parte #	Mfg.	Descripción	Valores	Precio
SIA416DJ-T1-GE3 DISTI # V72:2272_09216729	Vishay Intertechnologies	Trans MOSFET N-CH 100V 4.8A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant	3000	3000:$0.3442 1000:$0.3726 500:$0.4302 250:$0.4670 100:$0.5188 25:$0.6545 10:$0.7504 1:$0.9251
SIA416DJ-T1-GE3 DISTI # V36:1790_09216729	Vishay Intertechnologies	Trans MOSFET N-CH 100V 4.8A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant	0	3000000:$0.2945 1500000:$0.2947 300000:$0.3069 30000:$0.3258 3000:$0.3289
SIA416DJ-T1-GE3 DISTI # SIA416DJ-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 100V 11.3A SC70-6L RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1524In Stock	1000:$0.3115 500:$0.3893 100:$0.4925 10:$0.6420 1:$0.7300
SIA416DJ-T1-GE3 DISTI # SIA416DJ-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 100V 11.3A SC70-6L RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1524In Stock	1000:$0.3115 500:$0.3893 100:$0.4925 10:$0.6420 1:$0.7300
SIA416DJ-T1-GE3 DISTI # SIA416DJ-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 100V 11.3A SC70-6L RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	30000:$0.2394 15000:$0.2457 6000:$0.2551 3000:$0.2741
SIA416DJ-T1-GE3 DISTI # 32404542	Vishay Intertechnologies	Trans MOSFET N-CH 100V 4.8A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant	3000	28:$0.9251
SIA416DJ-T1-GE3 DISTI # SIA416DJ-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 100V 4.8A 6-Pin PowerPAK SC-70 T/R (Alt: SIA416DJ-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.2179 18000:€0.2339 12000:€0.2539 6000:€0.2949 3000:€0.4319
SIA416DJ-T1-GE3 DISTI # SIA416DJ-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 100V 4.8A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA416DJ-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.2308 18000:$0.2371 12000:$0.2439 6000:$0.2542 3000:$0.2620
SIA416DJ-T1-GE3 DISTI # 99W9412	Vishay Intertechnologies	MOSFET Transistor, N Channel, 11.3 A, 100 V, 0.068 ohm, 10 V, 1.6 V	0	50000:$0.2330 30000:$0.2430 20000:$0.2610 10000:$0.2790 5000:$0.3030 1:$0.3100
SIA416DJ-T1-GE3 DISTI # 19X1926	Vishay Intertechnologies	MOSFET Transistor, N Channel, 11.3 A, 100 V, 0.068 ohm, 10 V, 1.6 V RoHS Compliant: Yes	668	2500:$0.3160 1000:$0.3860 500:$0.4230 100:$0.4600 50:$0.5040 25:$0.5490 10:$0.5940 1:$0.7340
SIA416DJ-T1-GE3. DISTI # 30AC0108	Vishay Intertechnologies	Transistor Polarity:N Channel,Continuous Drain Current Id:4.8A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.068ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,Power Dissipation Pd:19W,No. of Pins:6Pins RoHS Compliant: No	0	50000:$0.2330 30000:$0.2430 20000:$0.2610 10000:$0.2790 5000:$0.3030 1:$0.3100
SIA416DJ-T1-GE3 DISTI # 70617011	Vishay Siliconix	SIA416DJ-T1-GE3 N-channel MOSFET Transistor,11.3 A,100 V,6-Pin PowerPAK SC-70 RoHS: Compliant	0	300:$0.3500 600:$0.3200 1500:$0.2900 3000:$0.2800
SIA416DJ-T1-GE3 DISTI # 78-SIA416DJ-T1-GE3	Vishay Intertechnologies	MOSFET 100V Vds 20V Vgs PowerPAK SC-70 RoHS: Compliant	5458	1:$0.7100 10:$0.5740 100:$0.4350 500:$0.3600 1000:$0.2880 3000:$0.2600 6000:$0.2430 9000:$0.2340 24000:$0.2250
SIA416DJ-T1-GE3 DISTI # 8181441P	Vishay Intertechnologies	TRANS MOSFET N-CH 100V 4.8A, RL	10400	200:£0.2140 100:£0.2320
SIA416DJ-T1-GE3 DISTI # TMOS2344	Vishay Intertechnologies	N-CH 100V 11,3A 68mOhm PPAK RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	3000:$0.2337
SIA416DJ-T1-GE3 DISTI # 2364067	Vishay Intertechnologies	MOSFET, N-CH, 100V, 11.3A, PPAKSC70-6 RoHS: Compliant	533	1000:$0.4700 500:$0.5870 100:$0.7430 10:$0.9670 1:$1.1000
SIA416DJ-T1-GE3	Vishay Intertechnologies	MOSFET 100V Vds 20V Vgs PowerPAK SC-70 RoHS: Compliant	Americas - 33000	3000:$0.2610 6000:$0.2440 12000:$0.2350
SIA416DJ-T1-GE3 DISTI # 2364067	Vishay Intertechnologies	MOSFET, N-CH, 100V, 11.3A, PPAKSC70-6	613	500:£0.3240 250:£0.3820 100:£0.4390 10:£0.6210 1:£0.7480

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Disponibilidad

Valores:: Available
En orden:: 1987
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SIA416DJ-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes