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SGH30N60RUFDTU

SGH30N60RUFDTU
Mfr. #:
SGH30N60RUFDTU
Fabricante:
ON Semiconductor / Fairchild
Descripción:
IGBT Transistors Dis Short Circuit Rated IGBT
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SGH30N60RUFDTU Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-3P-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
600 V
Voltaje de saturación colector-emisor:
2.2 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
48 A
Pd - Disipación de energía:
235 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
SGH30N60RUFD
Embalaje:
Tubo
Corriente continua de colector Ic Max:
48 A
Altura:
18.9 mm
Longitud:
15.8 mm
Ancho:
5 mm
Marca:
ON Semiconductor / Fairchild
Corriente continua del colector:
48 A
Corriente de fuga puerta-emisor:
+/- 100 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
450
Subcategoría:
IGBT
Parte # Alias:
SGH30N60RUFDTU_NL
Unidad de peso:
0.225789 oz
Tags
SGH30N60RUFD, SGH30N60R, SGH30N6, SGH30, SGH3, SGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Transistor,Igbt,N-Chan+Diode,600V V(Br)Ces,48A I(C),To-247Var Rohs Compliant: Yes
***et
Trans IGBT Chip N-CH 600V 48A 3-Pin(3+Tab) TO-3P(N) Rail
***rchild Semiconductor
Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.
***p One Stop Global
Trans IGBT Chip N-CH 600V 48A 250000mW 3-Pin(3+Tab) TO-220AB Tube
***ineon SCT
600 V, 24 A IGBT with anti-parallel diode in TO-220AB package, TO220COPAK-3, RoHS
***(Formerly Allied Electronics)
600V ULTRAFAST COPACK TRENCH IGBT IN A TO-220AB PACKAGE | Infineon IRGB4062DPBF
***ineon
Target Applications: Air Conditioner; Fan; PFC; Pump; Solar; UPS; Washing Machine; Welding
***ure Electronics
IRGB4062DPbF Series 600 V 24 A N-Channel Bipolar Transistor IGBT - TO-220AB
***trelec
IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.04 V Current release time: 29 ns Power dissipation: 250 W
***ark
Dc Collector Current:48A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:250W; Collector Emitter Voltage V(Br)Ceo:600V; No. Of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Msl:- Rohs Compliant: Yes |Infineon IRGB4062DPBF.
***ment14 APAC
IGBT, COPAK, TO-220; Transistor Type:IGBT; DC Collector Current:48A; Collector Emitter Voltage Vces:1.65V; Power Dissipation Pd:250W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:48A; Package / Case:TO-220; Power Dissipation Max:250W; Power Dissipation Pd:250W; Power Dissipation Pd:250W; Pulsed Current Icm:96A; Rise Time:22ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***p One Stop Global
Trans IGBT Chip N-CH 600V 48A 250000mW 3-Pin(3+Tab) TO-247AC Tube
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.04 V Current release time: 29 ns Power dissipation: 250 W
***nell
IGBT, COPAK, TO-247; DC Collector Current: 48A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Ic Continuous a Max: 48A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Power Dissipation Max: 250W; Pulsed Current Icm: 96A; Rise Time: 22ns; Termination Type: Through Hole; Transistor Polarity: N Channel; Transistor Type: IGBT; Voltage Vces: 600V
***ineon
Target Applications: Air Conditioner; Fan; PFC; Pump; Solar; UPS; Washing Machine; Welding
***-Wing Technology
Tube Through Hole Trench ROHS3Compliant IGBT Transistor 1.95V @ 15V 24A 48A 250W 89ns
***nell
IGBT,N CH,DIODE,600V,48A,D2PAK; Transistor Type:IGBT; DC Collector Current:48A; Collector Emitter Voltage Vces:1.6V; Power Dissipation Pd:250W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:250W
***ical
Trans IGBT Chip N-CH 600V 60A 150000mW 3-Pin(3+Tab) TO-220AB Tube
***icroelectronics
600 V, 30 A high speed trench gate field-stop IGBT
***nell
IGBT, 600V, 60A, TO-220-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 260W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018)
***ical
Trans IGBT Chip N-CH 600V 40A 100000mW 3-Pin(3+Tab) TO-220AB Tube
***r Electronics
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***icroelectronics
600 V, 20 A high speed trench gate field-stop IGBT
***ical
Trans IGBT Chip N-CH 600V 40A 167000mW 3-Pin(3+Tab) TO-220AB Tube
***icroelectronics
Trench gate field-stop IGBT, V series 600 V, 20 A very high speed
***r Electronics
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
Parte # Mfg. Descripción Valores Precio
SGH30N60RUFDTU
DISTI # SGH30N60RUFDTU-ND		ON SemiconductorIGBT 600V 48A 235W TO3P
RoHS: Compliant
Min Qty: 450
Container: Tube		Limited Supply - Call
  • 450:$3.1408
SGH30N60RUFDTU
DISTI # SGH30N60RUFDTU		ON SemiconductorTrans IGBT Chip N-CH 600V 48A 3-Pin(3+Tab) TO-3P(N) Rail (Alt: SGH30N60RUFDTU)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€2.0900
  • 10:€1.8900
  • 25:€1.8900
  • 50:€1.7900
  • 100:€1.7900
  • 500:€1.6900
  • 1000:€1.6900
SGH30N60RUFDTU
DISTI # SGH30N60RUFDTU		ON SemiconductorTrans IGBT Chip N-CH 600V 48A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: SGH30N60RUFDTU)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 450:$1.8900
  • 900:$1.8900
  • 1800:$1.7900
  • 2700:$1.7900
  • 4500:$1.7900
SGH30N60RUFDTU
DISTI # 512-SGH30N60RUFDTU		ON SemiconductorIGBT Transistors Dis Short Circuit Rated IGBT
RoHS: Compliant		0
    Imagen Parte # Descripción
    SGH30N60

    Mfr.#: SGH30N60

    OMO.#: OMO-SGH30N60-1190

    		 Nuevo y original
    SGH30N60DUFDTU

    Mfr.#: SGH30N60DUFDTU

    OMO.#: OMO-SGH30N60DUFDTU-1190

    		 Nuevo y original
    SGH30N60RUF

    Mfr.#: SGH30N60RUF

    OMO.#: OMO-SGH30N60RUF-1190

    		 Nuevo y original
    SGH30N60RUF G30N60

    Mfr.#: SGH30N60RUF G30N60

    OMO.#: OMO-SGH30N60RUF-G30N60-1190

    		 Nuevo y original
    SGH30N60RUFD G30N60RUF

    Mfr.#: SGH30N60RUFD G30N60RUF

    OMO.#: OMO-SGH30N60RUFD-G30N60RUF-1190

    		 Nuevo y original
    SGH30N60RUFD G30N60RUFD

    Mfr.#: SGH30N60RUFD G30N60RUFD

    OMO.#: OMO-SGH30N60RUFD-G30N60RUFD-1190

    		 Nuevo y original
    SGH30N60RUFDTU(SG)

    Mfr.#: SGH30N60RUFDTU(SG)

    OMO.#: OMO-SGH30N60RUFDTU-SG--1190

    		 Nuevo y original
    SGH30N60RUFTU

    Mfr.#: SGH30N60RUFTU

    OMO.#: OMO-SGH30N60RUFTU-ON-SEMICONDUCTOR

    		 IGBT 600V 48A 235W TO3P
    SGH30N60TU

    Mfr.#: SGH30N60TU

    OMO.#: OMO-SGH30N60TU-1190

    		 Nuevo y original
    SGH30N60RUFDTU

    Mfr.#: SGH30N60RUFDTU

    OMO.#: OMO-SGH30N60RUFDTU-ON-SEMICONDUCTOR

    		 IGBT Transistors Dis Short Circuit Rated IGBT
    Disponibilidad
    Valores:
    Available
    En orden:
    5000
    Ingrese la cantidad:
    El precio actual de SGH30N60RUFDTU es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    3,86 US$
    3,86 US$
    10
    3,27 US$
    32,70 US$
    100
    2,84 US$
    284,00 US$
    250
    2,69 US$
    672,50 US$
    500
    2,42 US$
    1 210,00 US$
    1000
    2,04 US$
    2 040,00 US$
    2500
    1,94 US$
    4 850,00 US$
    5000
    1,86 US$
    9 300,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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