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SIR880DP-T1-GE3

SIR880DP-T1-GE3
Mfr. #:
SIR880DP-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 80V Vds 20V Vgs PowerPAK SO-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIR880DP-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIR880DP-T1-GE3 DatasheetSIR880DP-T1-GE3 Datasheet (P4-P6)SIR880DP-T1-GE3 Datasheet (P7-P9)SIR880DP-T1-GE3 Datasheet (P10-P12)SIR880DP-T1-GE3 Datasheet (P13)
ECAD Model:
Más información:
SIR880DP-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PowerPAK-SO-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
80 V
Id - Corriente de drenaje continua:
60 A
Rds On - Resistencia de la fuente de drenaje:
4.9 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1.2 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
74 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
104 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
TrenchFET, PowerPAK
Embalaje:
Carrete
Altura:
1.04 mm
Longitud:
6.15 mm
Serie:
SEÑOR
Tipo de transistor:
1 N-Channel
Ancho:
5.15 mm
Marca:
Vishay / Siliconix
Transconductancia directa - Mín .:
64 S
Otoño:
11 ns
Tipo de producto:
MOSFET
Hora de levantarse:
10 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
38 ns
Tiempo típico de retardo de encendido:
12 ns
Parte # Alias:
SIR880DP-GE3
Unidad de peso:
0.017870 oz
Tags
SIR880, SIR88, SIR8, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
SiHG20N50C Series 80 V 60 A 5.9 mOhm Power MOSFET - POWERPAK-SO-8
***ical
Trans MOSFET N-CH 80V 23A 8-Pin PowerPAK SO T/R
***ment14 APAC
MOSFET,N CH,80V,60A,POWERPAK8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:80V; On Resistance Rds(on):4.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.2V; Power Dissipation Pd:6.25W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; Current Id Max:23A; Voltage Vgs Max:20V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
ThunderFET® Power MOSFETs
Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.
Parte # Mfg. Descripción Valores Precio
SIR880DP-T1-GE3
DISTI # C1S803604226829		Vishay IntertechnologiesMOSFETs
RoHS: Not Compliant		7
  • 1:$2.7200
SIR880DP-T1-GE3
DISTI # SIR880DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 80V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 6000:$1.2012
  • 3000:$1.2474
SIR880DP-T1-GE3
DISTI # SIR880DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 80V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$1.3800
  • 500:$1.6655
  • 100:$2.0272
  • 10:$2.5220
  • 1:$2.8100
SIR880DP-T1-GE3
DISTI # SIR880DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 80V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$1.3800
  • 500:$1.6655
  • 100:$2.0272
  • 10:$2.5220
  • 1:$2.8100
SIR880DP-T1-GE3
DISTI # V72:2272_09216054		Vishay IntertechnologiesTrans MOSFET N-CH 80V 23A 8-Pin PowerPAK SO T/R
RoHS: Compliant		0
    SIR880DP-T1-GE3
    DISTI # V36:1790_09216054    		Vishay IntertechnologiesTrans MOSFET N-CH 80V 23A 8-Pin PowerPAK SO T/R
    RoHS: Compliant    		0
    • 3000000:$1.2000
    • 1500000:$1.2010
    • 300000:$1.2200
    • 30000:$1.2440
    • 3000:$1.2470
    SIR880DP-T1-GE3
    DISTI # SIR880DP-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 80V 23A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR880DP-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 12000:$1.0900
    • 18000:$1.0900
    • 30000:$1.0900
    • 3000:$1.1900
    • 6000:$1.1900
    SIR880DP-T1-GE3
    DISTI # 79R5405    		Vishay IntertechnologiesTrans MOSFET N-CH 80V 23A 8-Pin PowerPAK SO T/R - Product that comes on tape, but is not reeled (Alt: 79R5405)
    RoHS: Compliant
    Min Qty: 1
    Container: Ammo Pack    		Americas - 0
    • 1000:$1.4700
    • 500:$1.5500
    • 250:$1.6600
    • 100:$1.7600
    • 50:$2.0200
    • 25:$2.2800
    • 1:$2.7400
    SIR880DP-T1-GE3
    DISTI # 79R5406    		Vishay IntertechnologiesN CH MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0049ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1.2V,Power Dissipation Pd:6.25W RoHS Compliant: Yes0
    • 10000:$1.1000
    • 6000:$1.1500
    • 4000:$1.1900
    • 2000:$1.3200
    • 1000:$1.3900
    • 1:$1.4800
    SIR880DP-T1-GE3
    DISTI # 79R5405    		Vishay IntertechnologiesN CHANNEL MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0049ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1.2V,Power Dissipation Pd:6.25W RoHS Compliant: Yes0
    • 1000:$1.4800
    • 500:$1.5700
    • 250:$1.6700
    • 100:$1.7800
    • 50:$2.0400
    • 25:$2.3000
    • 1:$2.7700
    SIR880DP-T1-GE3
    DISTI # 781-SIR880DP-T1-GE3    		Vishay IntertechnologiesMOSFET 80V Vds 20V Vgs PowerPAK SO-8
    RoHS: Compliant    		0
    • 1:$2.7300
    • 10:$2.2700
    • 100:$1.7600
    • 500:$1.5400
    • 1000:$1.2700
    • 3000:$1.1800
    • 6000:$1.1400
    SIR880DP-T1-GE3Vishay IntertechnologiesMOSFET 80V Vds 20V Vgs PowerPAK SO-8
    RoHS: Compliant    		Americas -
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      Disponibilidad
      Valores:
      Available
      En orden:
      3000
      Ingrese la cantidad:
      El precio actual de SIR880DP-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      2,73 US$
      2,73 US$
      10
      2,27 US$
      22,70 US$
      100
      1,76 US$
      176,00 US$
      500
      1,54 US$
      770,00 US$
      1000
      1,27 US$
      1 270,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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