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ZXMS6005DN8-13

ZXMS6005DN8-13
Mfr. #:
ZXMS6005DN8-13
Fabricante:
Diodes Incorporated
Descripción:
MOSFET Low Side IntelliFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
ZXMS6005DN8-13 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Diodos incorporados
Categoria de producto:
MOSFET
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SO-8
Número de canales:
2 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
60 V
Id - Corriente de drenaje continua:
1.8 A
Rds On - Resistencia de la fuente de drenaje:
150 mOhms
Vgs th - Voltaje umbral puerta-fuente:
700 mV
Vgs - Voltaje puerta-fuente:
5 V
Qg - Carga de puerta:
-
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 125 C
Pd - Disipación de energía:
1.67 W
Configuración:
Doble
Modo de canal:
Mejora
Embalaje:
Carrete
Tipo de transistor:
2 N-Channel
Marca:
Diodos incorporados
Otoño:
19 us, 19 us
Tipo de producto:
MOSFET
Hora de levantarse:
14 us, 14 us
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
34 us, 34 us
Tiempo típico de retardo de encendido:
6 us, 6 us
Unidad de peso:
0.002610 oz
Tags
ZXMS6005D, ZXMS6005, ZXMS6, ZXMS, ZXM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Transistor MOSFET Array Dual N-Channel 60V 8-Pin SO T/R
***ical
Self Protected Enhancement Mode Intellifet MOSFET
***i-Key
IC PWR DRIVER N-CHAN 1:1 8SOIC
Imagen Parte # Descripción
ZXMS6004FFTA

Mfr.#: ZXMS6004FFTA

OMO.#: OMO-ZXMS6004FFTA

 MOSFET 60V N-Channel self protected
ZXMS6006DGTA

Mfr.#: ZXMS6006DGTA

OMO.#: OMO-ZXMS6006DGTA

 MOSFET 60V N-CH INTELLIFET 60V VDS Mosfet
ZXMS6006SGTA

Mfr.#: ZXMS6006SGTA

OMO.#: OMO-ZXMS6006SGTA

 MOSFET 60V N-CH INTELLIFET 100mOhm 2.8A 480mJ
ZXMS6001N3TA

Mfr.#: ZXMS6001N3TA

OMO.#: OMO-ZXMS6001N3TA

 MOSFET 60V LO INPT CURR SELF PROT LO SD SWCH
ZXMS6005DN8-13

Mfr.#: ZXMS6005DN8-13

OMO.#: OMO-ZXMS6005DN8-13

 MOSFET Low Side IntelliFET
ZXMS6002G

Mfr.#: ZXMS6002G

OMO.#: OMO-ZXMS6002G-1190

 Nuevo y original
ZXMS6004N8-13

Mfr.#: ZXMS6004N8-13

OMO.#: OMO-ZXMS6004N8-13-DIODES

 Trans MOSFET N-CH 60V 1.3A 8-Pin SO T/R
ZXMS6005DGQTA

Mfr.#: ZXMS6005DGQTA

OMO.#: OMO-ZXMS6005DGQTA-DIODES

 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET™ MOSFET
ZXMS6005N8-13

Mfr.#: ZXMS6005N8-13

OMO.#: OMO-ZXMS6005N8-13-DIODES

 Trans MOSFET N-CH 60V 8-Pin SO T/R
ZXMS6005DGTA-CUT TAPE

Mfr.#: ZXMS6005DGTA-CUT TAPE

OMO.#: OMO-ZXMS6005DGTA-CUT-TAPE-1190

 Nuevo y original
Disponibilidad
Valores:
Available
En orden:
2500
Ingrese la cantidad:
El precio actual de ZXMS6005DN8-13 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,27 US$
1,27 US$
10
1,08 US$
10,80 US$
100
0,84 US$
83,70 US$
500
0,74 US$
369,50 US$
1000
0,58 US$
584,00 US$
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