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IPB038N12N3 G

IPB038N12N3 G
Mfr. #:
IPB038N12N3 G
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-Ch 120V 120A D2PAK-2 OptiMOS 3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPB038N12N3 G Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IPB038N12N3 G más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-263-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
120 V
Id - Corriente de drenaje continua:
120 A
Rds On - Resistencia de la fuente de drenaje:
3.2 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
211 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
300 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
OptiMOS
Embalaje:
Carrete
Altura:
4.4 mm
Longitud:
10 mm
Serie:
OptiMOS 3
Tipo de transistor:
1 N-Channel
Ancho:
9.25 mm
Marca:
Infineon Technologies
Transconductancia directa - Mín .:
83 S
Otoño:
21 ns
Tipo de producto:
MOSFET
Hora de levantarse:
52 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
70 ns
Tiempo típico de retardo de encendido:
35 ns
Parte # Alias:
IPB038N12N3GATMA1 IPB38N12N3GXT SP000694160
Unidad de peso:
0.139332 oz
Tags
IPB038, IPB03, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
IPB038N12N3 G; N-channel MOSFET Transistor; 120 A 120 V; 3-Pin PG-TO-263-3
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Parte # Mfg. Descripción Valores Precio
IPB038N12N3 G
DISTI # 31037692		Infineon Technologies AGTrans MOSFET N-CH 120V 120A 3-Pin(2+Tab) TO-263
RoHS: Compliant		872
  • 5:$6.1125
IPB038N12N3GATMA1
DISTI # IPB038N12N3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 120V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		580In Stock
  • 500:$3.7864
  • 100:$4.4479
  • 10:$5.4290
  • 1:$6.0400
IPB038N12N3GATMA1
DISTI # IPB038N12N3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 120V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		580In Stock
  • 500:$3.7864
  • 100:$4.4479
  • 10:$5.4290
  • 1:$6.0400
IPB038N12N3GATMA1
DISTI # IPB038N12N3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 120V 120A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2000:$2.9454
  • 1000:$3.1004
IPB038N12N3GATMA1
DISTI # V36:1790_06377059		Infineon Technologies AGTrans MOSFET N-CH 120V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
  • 1000000:$3.0670
  • 500000:$3.0700
  • 100000:$3.2890
  • 10000:$3.6590
  • 1000:$3.7200
IPB038N12N3GATMA1
DISTI # V72:2272_06377059		Infineon Technologies AGTrans MOSFET N-CH 120V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
    IPB038N12N3 G
    DISTI # IPB038N12N3 G    		Infineon Technologies AGTrans MOSFET N-CH 120V 120A 3-Pin TO-263 T/R (Alt: IPB038N12N3 G)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape and Reel    		Asia - 0
    • 50000:$2.6698
    • 25000:$2.7040
    • 10000:$2.7391
    • 5000:$2.7751
    • 3000:$2.8501
    • 2000:$2.9293
    • 1000:$3.0130
    IPB038N12N3GATMA1
    DISTI # IPB038N12N3GATMA1    		Infineon Technologies AGTrans MOSFET N-CH 120V 120A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB038N12N3GATMA1)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel    		Americas - 0
    • 10000:$2.5900
    • 6000:$2.6900
    • 4000:$2.7900
    • 2000:$2.8900
    • 1000:$2.9900
    IPB038N12N3GATMA1
    DISTI # SP000694160    		Infineon Technologies AGTrans MOSFET N-CH 120V 120A 3-Pin(2+Tab) TO-263 (Alt: SP000694160)
    RoHS: Compliant
    Min Qty: 1000    		Europe - 0
    • 10000:€2.1900
    • 6000:€2.3900
    • 4000:€2.5900
    • 2000:€2.6900
    • 1000:€2.7900
    IPB038N12N3GATMA1
    DISTI # 47W3464    		Infineon Technologies AGMOSFET, N CHANNEL, 120V, 120A, TO263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:120V,On Resistance Rds(on):0.0032ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
    • 500:$3.5400
    • 250:$3.9400
    • 100:$4.1500
    • 50:$4.3600
    • 25:$4.5800
    • 10:$4.7900
    • 1:$5.6400
    IPB038N12N3 G
    DISTI # 70400905    		Infineon Technologies AGIPB038N12N3 G,N-channel MOSFET Transistor,120 A 120 V,3-Pin PG-TO-263-3
    RoHS: Not Compliant    		0
    • 1:$4.2100
    • 25:$3.8600
    • 100:$3.6100
    IPB038N12N3 G
    DISTI # 726-IPB038N12N3GXT    		Infineon Technologies AGMOSFET N-Ch 120V 120A D2PAK-2 OptiMOS 3
    RoHS: Compliant    		342
    • 1:$5.5800
    • 10:$4.7400
    • 100:$4.1100
    • 250:$3.9000
    • 500:$3.5000
    • 1000:$2.9500
    IPB038N12N3GATMA1
    DISTI # 726-IPB038N12N3GATMA    		Infineon Technologies AGMOSFET N-Ch 120V 120A D2PAK-2 OptiMOS 3
    RoHS: Compliant    		264
    • 1:$5.5800
    • 10:$4.7400
    • 100:$4.1100
    • 250:$3.9000
    • 500:$3.5000
    • 1000:$2.9500
    • 2000:$2.8000
    IPB038N12N3 GInfineon Technologies AG 209
    • 138:$6.5175
    • 33:$7.3075
    • 1:$11.8500
    IPB038N12N3GATMA1
    DISTI # 2212825    		Infineon Technologies AGMOSFET, N-CH, 120V, 120A, TO263-3
    RoHS: Compliant    		16
    • 1000:$4.4500
    • 500:$5.2700
    • 250:$5.8800
    • 100:$6.1900
    • 10:$7.1400
    • 1:$8.4100
    IPB038N12N3GATMA1
    DISTI # 2212825    		Infineon Technologies AGMOSFET, N-CH, 120V, 120A, TO263-30
    • 500:£2.7200
    • 250:£3.0400
    • 100:£3.2000
    • 10:£3.6900
    • 1:£4.8000
    IPB038N12N3GInfineon Technologies AG 
    RoHS: Compliant    		815
      IPB038N12N3 G
      DISTI # TMOSP9473      		Infineon Technologies AGN-CH 120V 120A4mOhm TO263-3
      RoHS: Compliant      		Stock DE - 0Stock HK - 0Stock US - 0
      • 1000:$2.7800
      IPB038N12N3 GInfineon Technologies AGRoHS(ship within 1day)262
      • 1:$5.6800
      • 10:$4.8300
      • 50:$4.2600
      • 100:$4.0900
      • 500:$4.0300
      • 1000:$3.9500
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      Disponibilidad
      Valores:
      42
      En orden:
      2025
      Ingrese la cantidad:
      El precio actual de IPB038N12N3 G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      5,58 US$
      5,58 US$
      10
      4,74 US$
      47,40 US$
      100
      4,11 US$
      411,00 US$
      250
      3,90 US$
      975,00 US$
      500
      3,50 US$
      1 750,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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