FGA20S140P

FGA20S140P
Mfr. #:
FGA20S140P
Fabricante:
ON Semiconductor / Fairchild
Descripción:
IGBT Transistors USB Port Multimedia Switch
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FGA20S140P Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
FGA20S140P más información
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-3PN
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
1400 V
Voltaje de saturación colector-emisor:
2.2 V
Voltaje máximo del emisor de puerta:
25 V
Corriente continua del colector a 25 C:
40 A
Pd - Disipación de energía:
272 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Serie:
FGA20S140P
Embalaje:
Tubo
Corriente continua de colector Ic Max:
40 A
Marca:
ON Semiconductor / Fairchild
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
450
Subcategoría:
IGBT
Unidad de peso:
0.225789 oz
Tags
FGA20S1, FGA20S, FGA20, FGA2, FGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N=-CH 1400V 40A 272000mW 3-Pin(3+Tab) TO-3PN Tube
***ure Electronics
FGA20S140P Series 1400 V 20 A Through Hole Shorted Anode IGBT - TO-3PN
***emi
IGBT, 1400V, 20A, Shorted-anode
***r Electronics
Insulated Gate Bipolar Transistor, 40A I(C), 1400V V(BR)CES, N-Channel
*** Electronic Components
IGBT Transistors USB Port Multimedia Switch
***nell
IGBT, 1.4KV, 20A, 175DEG C, 272W;
***i-Key
IGBT TRENCH/FS 1400V 40A TO3PN
***i-Key Marketplace
INSULATED GATE BIPOLAR TRANSISTO
***rchild Semiconductor
Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven.
***ical
Trans IGBT Chip N-CH 1.2KV 40A 3-Pin(3+Tab) TO-3P(N) Rail
***nell
IGBT,N CH,1200V,40A,TO3PN; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:1.2kV; Power Dissipation Pd:348W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-3PN; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:348W
***rchild Semiconductor
Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven.
***icroelectronics
1250 V, 20 A IH series trench gate field-stop IGBT
***ure Electronics
IGBT Transistors 1250V 20A trench gte field-stop IGBT
***et
Trans IGBT Chip N-CH 1250V 40A 3-Pin TO-3P Tube
***r Electronics
Insulated Gate Bipolar Transistor, 40A I(C), 1250V V(BR)CES, N-Channel
***icroelectronics SCT
Trench gate field-stop IGBT, TO-3P, Tube
***et
Trans IGBT Chip N-CH 1.25KV 40A 3-Pin(3+Tab) TO-3P(N) T/R
*** Electronic Components
IGBT Transistors 2.5A Output Current GateDrive Optocopler
***emi
1250V, 20A, Shorted-anode IGBT
***rchild Semiconductor
Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven.
***ical
Trans IGBT Chip N-CH 1.25KV 30A 3-Pin(3+Tab) TO-3PN Tube
***emi
IGBT, 1250V, 15A, Shorted-anode
***r Electronics
Insulated Gate Bipolar Transistor, 30A I(C), 1250V V(BR)CES, N-Channel
***ark
RAIL / 1250V 15A FS SA Trench IGBT
***rchild Semiconductor
Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for switching applications. The device can operate in parallel configuration with exceptional avalanche capability . This device is designed for induction heating and microwave oven.
***omponent
Trans IGBT Chip N-CH 1.2KV 20A 3-Pin TO-247 Tube (Alt: SP001150026)
***ark
Igbt, Single, 1.2Kv, 40A, To-247; Dc Collector Current:40A; Collector Emitter Saturation Voltage Vce(On):1.55V; Power Dissipation Pd:288W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IHW20N120R5XKSA1
***ineon SCT
The 5th generation of reverse conducting 1200 V, 20 A TRENCHSTOP™ 5 IGBTs with monolithically integrated reverse conducting diode in a TO247 package has been optimized for the demanding requirements of Induction Cooking applications, PG-TO247-3, RoHS
***ineon
The latest generation of reverse conducting IGBTs has been optimized for the demanding requirements of Induction Cooking applications. The new 20A RC-H5 devices complement the previous generation of reverse conduction IGBTs and extend the performance leadership of the RC-H family, focusing on system efficiency and reliability. | Summary of Features: Switching losses reduced by 30%; Very low conduction losses; Reduced turn-on current spike up to 10%; T j(max) = 175C; Soft current turn-off waveforms for low EMI | Benefits: Increased switching frequency; Lowest power dissipation; Better thermal management for higher reliability; Lower EMI filtering requirements; Reduced system costs; Highest reliability against peak current | Target Applications: Induction cooking stoves; Inverterized microwave ovens; Induction rice cookers; Induction water heaters; Other resonant switching topologies
***ineon SCT
1350 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS
***ark
Igbt, Single, 1.35Kv, 40A, To-247; Dc Collector Current:40A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:288W; Collector Emitter Voltage V(Br)Ceo:1.35Kv; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IHW20N135R5XKSA1
***ineon
The latest generation of reverse conducting IGBTs has been optimized for the demanding requirements of Induction Cooking applications. The new 20A RC-H5 devices complement the previous generation of reverse conduction IGBTs and extend the performance leadership of the RC-H family, focusing on system efficiency and reliability. | Summary of Features: Switching losses reduced by 30%; Very low conduction losses; Reduced turn-on current spike up to 10%; T j(max) = 175C; Soft current turn-off waveforms for low EMI; Higher blocking voltage V BR(min) = 1350 | Benefits: Increased switching frequency; Lowest power dissipation; Better thermal management for higher reliability; Lower EMI filtering requirements; Reduced system costs; Highest reliability against peak current | Target Applications: Induction cooking stoves; Inverterized microwave ovens; Induction rice cookers; Induction water heaters; Other resonant switching topologies
Shorted Anode™ Trench IGBTs
ON Semiconductor Shorted Anode Trench IGBTs™ deliver superior conduction, switching performances, and easy parallel operation with exceptional avalanche capability. Fairchild Shorted Anode Trench IGBTs feature Field Stop Trench and Shorted Anode technology and are designed for induction heating, microwave oven applications, and soft switching applications.Learn More
Parte # Mfg. Descripción Valores Precio
FGA20S140P
DISTI # 26637373
ON Semiconductor1400V FS SA TIGBT17100
  • 450:$1.3382
FGA20S140P
DISTI # FGA20S140P-ND
ON SemiconductorIGBT 1400V 40A 272W TO-3PN
RoHS: Compliant
Min Qty: 1
Container: Tube
669In Stock
  • 2700:$1.4764
  • 900:$1.8382
  • 450:$2.0486
  • 25:$2.4916
  • 10:$2.6350
  • 1:$2.9300
FGA20S140P
DISTI # V36:1790_06359612
ON Semiconductor1400V FS SA TIGBT0
    FGA20S140P
    DISTI # FGA20S140P
    ON SemiconductorTrans IGBT Chip N-CH 1.4KV 40A 3-Pin(3+Tab) TO-3P(N) T/R (Alt: FGA20S140P)
    RoHS: Compliant
    Min Qty: 1
    Container: Tape and Reel
    Europe - 0
    • 1000:€1.2900
    • 50:€1.3900
    • 100:€1.3900
    • 500:€1.3900
    • 25:€1.5900
    • 10:€1.7900
    • 1:€2.1900
    FGA20S140P
    DISTI # FGA20S140P
    ON SemiconductorTrans IGBT Chip N-CH 1.4KV 40A 3-Pin(3+Tab) TO-3P(N) T/R - Rail/Tube (Alt: FGA20S140P)
    RoHS: Compliant
    Min Qty: 450
    Container: Tube
    Americas - 0
    • 450:$1.2900
    • 900:$1.2900
    • 1800:$1.2900
    • 2700:$1.2900
    • 4500:$1.2900
    FGA20S140P
    DISTI # FGA20S140P
    ON SemiconductorTrans IGBT Chip N-CH 1.4KV 40A 3-Pin(3+Tab) TO-3P(N) T/R - Bulk (Alt: FGA20S140P)
    Min Qty: 193
    Container: Bulk
    Americas - 0
    • 193:$1.5900
    • 386:$1.5900
    • 579:$1.5900
    • 965:$1.5900
    • 1930:$1.5900
    FGA20S140PON SemiconductorFGA20S140P Series 1400 V 20 A Through Hole Shorted Anode IGBT - TO-3PN
    RoHS: Compliant
    210Tube
    • 30:$2.2500
    • 60:$1.3100
    • 150:$1.1600
    • 300:$1.0600
    FGA20S140P
    DISTI # 512-FGA20S140P
    ON SemiconductorIGBT Transistors USB Port Multimedia Switch
    RoHS: Compliant
    1497
    • 1:$2.7900
    • 10:$2.3700
    • 100:$2.0500
    • 250:$1.9500
    • 500:$1.7500
    • 1000:$1.4700
    • 2500:$1.4000
    • 5000:$1.3500
    FGA20S140PFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 40A I(C), 1400V V(BR)CES, N-Channel
    RoHS: Compliant
    51385
    • 1000:$1.7100
    • 500:$1.8000
    • 100:$1.8800
    • 25:$1.9600
    • 1:$2.1100
    FGA20S140P
    DISTI # 8648773P
    ON SemiconductorIGBT 1400V 20A SHORTED-ANODE TO3PN, TU268
    • 900:£1.5400
    • 450:£1.6350
    • 100:£1.7500
    • 20:£1.9950
    FGA20S140P
    DISTI # 8648773
    ON SemiconductorIGBT 1400V 20A SHORTED-ANODE TO3PN, PK78
    • 900:£1.5400
    • 450:£1.6350
    • 100:£1.7500
    • 20:£1.9950
    • 2:£2.2650
    FGA20S140P
    DISTI # XSFP00000134910
    Fairchild Semiconductor CorporationBTS50080 Series 38 V 9.5 A Smart High SidePowerSwitch - PG-TO-220-7-4
    RoHS: Compliant
    114 in Stock0 on Order
    • 114:$2.3800
    • 77:$2.6200
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    Thick Film Resistors - SMD 1/10Watt 10Mohms 1% Commercial Use
    CRCW25121R50FKEG

    Mfr.#: CRCW25121R50FKEG

    OMO.#: OMO-CRCW25121R50FKEG

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    CRCW080510R0FKEAC

    Mfr.#: CRCW080510R0FKEAC

    OMO.#: OMO-CRCW080510R0FKEAC

    Thick Film Resistors - SMD 1/8Watt 10ohms 1% Commercial Use
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    Mfr.#: MGJ2D051509SC

    OMO.#: OMO-MGJ2D051509SC-MURATA-POWER-SOLUTIONS

    Isolated DC/DC Converters 2W 5Vin 15/-8.7Vout 80/40mA SIP
    IHW30N120R5XKSA1

    Mfr.#: IHW30N120R5XKSA1

    OMO.#: OMO-IHW30N120R5XKSA1-INFINEON-TECHNOLOGIES

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    CRCW080510R0FKEAC

    Mfr.#: CRCW080510R0FKEAC

    OMO.#: OMO-CRCW080510R0FKEAC-VISHAY-DALE

    D12/CRCW0805-C 100 10R 1% ET1
    AC0805FR-1347KL

    Mfr.#: AC0805FR-1347KL

    OMO.#: OMO-AC0805FR-1347KL-433

    Res Thick Film 0805 47K Ohm 1% 0.125W(1/8W) ±100ppm/C Sulfur Resistant Molded SMD Automotive Paper T/R
    Disponibilidad
    Valores:
    Available
    En orden:
    1985
    Ingrese la cantidad:
    El precio actual de FGA20S140P es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    3,23 US$
    3,23 US$
    10
    2,75 US$
    27,50 US$
    100
    2,37 US$
    237,00 US$
    250
    2,26 US$
    565,00 US$
    500
    2,03 US$
    1 015,00 US$
    1000
    1,70 US$
    1 700,00 US$
    2500
    1,62 US$
    4 050,00 US$
    5000
    1,56 US$
    7 800,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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