FCB20N60FTM

FCB20N60FTM
Mfr. #:
FCB20N60FTM
Fabricante:
ON Semiconductor
Descripción:
MOSFET N-CH 600V 20A D2PAK
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FCB20N60FTM Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Fairchild Semiconductor
categoria de producto
FET - Single
Serie
SuperFET
embalaje
Embalaje alternativo de Digi-ReelR
Unidad de peso
0.046296 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
1 Channel
Paquete de dispositivo de proveedor
D2PAK
Configuración
Único
Tipo FET
Canal N MOSFET, óxido metálico
Potencia máxima
208W
Tipo transistor
1 N-Channel
Drenaje-a-fuente-voltaje-Vdss
600V
Entrada-Capacitancia-Ciss-Vds
3080pF @ 25V
Función FET
Estándar
Corriente-Continuo-Drenaje-Id-25 ° C
20A (Tc)
Rds-On-Max-Id-Vgs
190 mOhm @ 10A, 10V
Vgs-th-Max-Id
5V @ 250μA
Puerta-Carga-Qg-Vgs
98nC @ 10V
Disipación de potencia Pd
208 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
65 ns
Hora de levantarse
140 ns
Vgs-Puerta-Fuente-Voltaje
30 V
Id-corriente-de-drenaje-continua
20 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Resistencia a la fuente de desagüe de Rds
150 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
230 ns
Tiempo de retardo de encendido típico
62 ns
Transconductancia directa-Mín.
17 S
Modo de canal
Mejora
Tags
FCB20N60F, FCB20N, FCB20, FCB2, FCB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, SUPERFET®, FRFET®, 600 V, 20 A, 190 mΩ, D2PAK
***p One Stop Global
Trans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R
***Components
MOSFET N-Channel 600V 20A SuperFET D2PAK
***ure Electronics
FCB20N60F Series 600 V 0.19 Ohms Surface Mount N-Channel FRFET D2-PAK-3
***i-Key
MOSFET N-CH 600V 20A D2PAK
***ser
MOSFETs 600V, NCH, FRFET
***inecomponents.com
600V N-CHANNEL FRFET
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:20A; Drain Source Voltage, Vds:600V; On Resistance, Rds(on):0.15ohm; Rds(on) Test Voltage, Vgs:10V; Operating Temperature Range:-55°C to +150°C; Package/Case:3-D2Pak
***th Star Micro
SuperFET is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
***nell
MOSFET, N, 600V, D2-PAK; Transistor type:MOSFET; Voltage, Vds typ:600V; Current, Id cont:20A; Resistance, Rds on:0.19ohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:5V; Case style:D2-PAK; Capacitance, Ciss typ:2370pF; Case style, alternate:TO-263; Current, Idm pulse:60A; Marking, SMD:FCB20N60F; Pin format:G(1),D(2),S(3); Power dissipation:208W; Power, Pd:208W; Temperature, Tj max:150°C; Termination Type:SMD; Time, fall:65ns; Time, rise:140ns; Time, trr typ:160ns; Transistor polarity:N; Transistors, No. of:1; Voltage, Rds measurement:10V; Voltage, Vds max:600V; Voltage, Vgs th max:5V; dv/dt:50V/ns
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
Parte # Mfg. Descripción Valores Precio
FCB20N60FTM
DISTI # V72:2272_06337697
ON Semiconductor600V, NCH, FRFET798
  • 500:$2.5740
  • 250:$2.8590
  • 100:$3.0130
  • 25:$3.1269
  • 10:$3.4750
  • 1:$4.4847
FCB20N60FTM
DISTI # V36:1790_06337697
ON Semiconductor600V, NCH, FRFET0
  • 800000:$1.8710
  • 400000:$1.8740
  • 80000:$2.1480
  • 8000:$2.6300
  • 800:$2.7100
FCB20N60FTM
DISTI # FCB20N60FTMCT-ND
ON SemiconductorMOSFET N-CH 600V 20A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1600In Stock
  • 100:$2.7327
  • 10:$3.3350
  • 1:$3.7100
FCB20N60FTM
DISTI # FCB20N60FTMDKR-ND
ON SemiconductorMOSFET N-CH 600V 20A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1600In Stock
  • 100:$2.7327
  • 10:$3.3350
  • 1:$3.7100
FCB20N60FTM
DISTI # FCB20N60FTMTR-ND
ON SemiconductorMOSFET N-CH 600V 20A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)
800In Stock
  • 5600:$1.7416
  • 2400:$1.8096
  • 1600:$1.9048
  • 800:$2.2586
FCB20N60FTM
DISTI # 33079212
ON Semiconductor600V, NCH, FRFET800
  • 2400:$1.7960
  • 1600:$1.8858
  • 800:$2.2360
FCB20N60FTM
DISTI # 33599206
ON Semiconductor600V, NCH, FRFET800
  • 800:$2.2667
FCB20N60FTM
DISTI # 32681977
ON Semiconductor600V, NCH, FRFET798
  • 500:$2.5740
  • 250:$2.8590
  • 100:$3.0130
  • 25:$3.1269
  • 10:$3.4750
  • 4:$4.4847
FCB20N60FTM
DISTI # FCB20N60FTM
ON SemiconductorTrans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R (Alt: FCB20N60FTM)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel
Europe - 0
  • 8000:€1.4900
  • 4800:€1.5900
  • 3200:€1.6900
  • 800:€1.7900
  • 1600:€1.7900
FCB20N60FTM
DISTI # FCB20N60FTM
ON SemiconductorTrans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R (Alt: FCB20N60FTM)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel
Asia - 0
  • 40000:$2.1243
  • 20000:$2.1597
  • 8000:$2.2341
  • 4000:$2.3139
  • 2400:$2.3996
  • 1600:$2.4919
  • 800:$2.5916
FCB20N60FTM
DISTI # FCB20N60FTM
ON SemiconductorTrans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FCB20N60FTM)
RoHS: Compliant
Min Qty: 800
Container: Reel
Americas - 0
  • 8000:$1.4900
  • 800:$1.5900
  • 1600:$1.5900
  • 3200:$1.5900
  • 4800:$1.5900
FCB20N60FTM
DISTI # 20M1150
ON SemiconductorN CHANNEL MOSFET, 600V, 20A, D2-PAK,Transistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.15ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V RoHS Compliant: Yes0
  • 4000:$1.9400
  • 2400:$2.1000
  • 1600:$2.1600
  • 1:$2.3300
  • 800:$2.3300
FCB20N60FTM
DISTI # 67P3446
ON SemiconductorN CHANNEL MOSFET, 600V, 20A, D2-PAK,Transistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.15ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V RoHS Compliant: Yes0
  • 500:$2.6500
  • 250:$2.9400
  • 100:$3.0900
  • 50:$3.2500
  • 25:$3.4000
  • 10:$3.5600
  • 1:$4.1600
FCB20N60FTM
DISTI # 512-FCB20N60FTM
ON SemiconductorMOSFET 600V NCH FRFET
RoHS: Compliant
695
  • 1:$3.4200
  • 10:$2.9100
  • 100:$2.5200
  • 250:$2.3900
  • 500:$2.1500
  • 800:$1.8600
FCB20N60FTMFairchild Semiconductor Corporation 253
    FCB20N60FTM
    DISTI # XSFP00000073919
    Fairchild Semiconductor Corporation 
    RoHS: Compliant
    1600 in Stock0 on Order
    • 1600:$2.1600
    • 800:$2.3100
    Imagen Parte # Descripción
    FCB20N60FTM

    Mfr.#: FCB20N60FTM

    OMO.#: OMO-FCB20N60FTM-ON-SEMICONDUCTOR

    MOSFET N-CH 600V 20A D2PAK
    FCB20N60F_F085

    Mfr.#: FCB20N60F_F085

    OMO.#: OMO-FCB20N60F-F085-124

    Darlington Transistors MOSFET 600V, 20A SuperFET
    FCB2012K-070T09

    Mfr.#: FCB2012K-070T09

    OMO.#: OMO-FCB2012K-070T09-1190

    Nuevo y original
    FCB2012K-110

    Mfr.#: FCB2012K-110

    OMO.#: OMO-FCB2012K-110-1190

    Nuevo y original
    FCB2012K-110T06

    Mfr.#: FCB2012K-110T06

    OMO.#: OMO-FCB2012K-110T06-1190

    Nuevo y original
    FCB2012K-190T06

    Mfr.#: FCB2012K-190T06

    OMO.#: OMO-FCB2012K-190T06-1190

    Nuevo y original
    FCB2012K-280T06

    Mfr.#: FCB2012K-280T06

    OMO.#: OMO-FCB2012K-280T06-1190

    Nuevo y original
    FCB2012KF-260T07

    Mfr.#: FCB2012KF-260T07

    OMO.#: OMO-FCB2012KF-260T07-1190

    Nuevo y original
    FCB20N60TM-CUT TAPE

    Mfr.#: FCB20N60TM-CUT TAPE

    OMO.#: OMO-FCB20N60TM-CUT-TAPE-1190

    Nuevo y original
    FCB20N60-F085

    Mfr.#: FCB20N60-F085

    OMO.#: OMO-FCB20N60-F085-ON-SEMICONDUCTOR

    MOSFET N-CH 600V 20A D2PAK
    Disponibilidad
    Valores:
    Available
    En orden:
    3500
    Ingrese la cantidad:
    El precio actual de FCB20N60FTM es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    2,24 US$
    2,24 US$
    10
    2,12 US$
    21,23 US$
    100
    2,01 US$
    201,15 US$
    500
    1,90 US$
    949,90 US$
    1000
    1,79 US$
    1 788,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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