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NXH80B120H2Q0SG

NXH80B120H2Q0SG
Mfr. #:
NXH80B120H2Q0SG
Fabricante:
ON Semiconductor
Descripción:
IGBT Modules PIM 1200V 40A DU BST SiC DIODE
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
NXH80B120H2Q0SG Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
NXH80B120H2Q0SG más información
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Módulos IGBT
RoHS:
Y
Tecnología:
Sic
Producto:
Módulos de carburo de silicio IGBT
Configuración:
Doble
Voltaje colector-emisor VCEO Max:
1200 V
Voltaje de saturación colector-emisor:
2.2 V
Corriente continua del colector a 25 C:
40 A
Corriente de fuga puerta-emisor:
200 nA
Pd - Disipación de energía:
103 W
Paquete / Caja:
Q0BOOST
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 125 C
Embalaje:
Bandeja
Marca:
EN Semiconductor
Estilo de montaje:
Presione Ajustar
Voltaje máximo del emisor de puerta:
20 V
Tipo de producto:
Módulos IGBT
Cantidad de paquete de fábrica:
24
Subcategoría:
IGBT
Tags
NXH8, NXH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
Power Integrated Module, Dual Boost, 1200 V, 40 A IGBT + 1200 V, 15 A SiC Diode Bare copper DBC
***ical
Trans IGBT Module N-CH 1200V 41A 103000mW 20-Pin Case 180AJ Tray
***et Europe
Transistor IGBT Module N-CH 1.2kV 40A ±20V Screw Tray
***ark
Igbt, Module, N-Ch, 1.2Kv, 40A; Transistor Polarity:n Channel; Dc Collector Current:40A; Collector Emitter Saturation Voltage Vce(On):2.2V; Power Dissipation Pd:103W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes
NXH80B120H2Q0SG Power Integrated Module
ON Semiconductor NXH80B120H2Q0SG Power Integrated Module (PIM) with a dual boost stage consists of two 40A/1200V IGBTs. This module includes two 15A/1200V silicon carbide diodes, two 25A/1600V anti-parallel diodes for the IGBTs, two 25A/1600V bypass rectifiers, and an on-board thermistor. Typical applications include solar inverter and Uninterruptible Power Supplies (UPS).
Wide Bandgap SiC Devices
ON Semiconductor Wide Bandgap Silicon Carbide (SiC) Devices incorporate a completely new technology that provides superior switching performance and higher reliability compared to silicon. The system benefits include the highest efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost. ON Semiconductor’s SiC portfolio includes 650V and 1200V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.
SiC Diodes and IGBT Power Integrated Modules
ON Semiconductor Silicon Carbide (SiC) Diodes and IGBT Power Integrated Modules (PIM) provide lower conduction and switching losses. These integrated high-speed field stop IGBT and SiC diodes feature built-in Negative Temperature Co-efficient (NTC) for temperature monitoring. The SiC diodes and IGBT PIMs are optimized for solar inverters, UPS, or power stages that need a more compact design.
Solutions for Energy Infrastructure
ON Semiconductor Solutions for Energy Infrastructure address the landscape for energy generation, distribution, and storage that is rapidly evolving to fulfill targets set by government policy and increasing consumption. Heightened efficiency targets, reductions of CO2 emissions, and a focus on renewable and clean energy are key factors in this Energy Infrastructure Evolution. ON Semiconductor offers a comprehensive portfolio of energy efficient solutions to serve the demanding needs of high-power applications including Silicon Carbide (SiC) Diodes, Intelligent Power Modules, and Current Sense Amplifiers.
Parte # Mfg. Descripción Valores Precio
NXH80B120H2Q0SG
DISTI # V99:2348_18980267		ON SemiconductorPIM 1200V, 40A DUAL BOOST24
  • 25:$71.0800
  • 10:$73.9100
  • 5:$75.8500
  • 1:$77.2600
NXH80B120H2Q0SG
DISTI # NXH80B120H2Q0SGOS-ND		ON SemiconductorPIM 1200V, 40A DUAL BOOST
RoHS: Compliant
Min Qty: 1
Container: Tray		24In Stock
  • 24:$75.0200
  • 1:$79.8600
NXH80B120H2Q0SG
DISTI # 26992226		ON SemiconductorPIM 1200V, 40A DUAL BOOST24
  • 1:$77.2600
NXH80B120H2Q0SG
DISTI # NXH80B120H2Q0SG		ON SemiconductorDual Boost Power Module with SiC Rectifier 1200 V 40 A IGBT Tray - Trays (Alt: NXH80B120H2Q0SG)
RoHS: Compliant
Min Qty: 6000
Container: Tray		Americas - 0
    NXH80B120H2Q0SG
    DISTI # 48AC1760    		ON SemiconductorIGBT, MODULE, N-CH, 1.2KV, 40A,Transistor Polarity:N Channel,DC Collector Current:40A,Collector Emitter Saturation Voltage Vce(on):2.2V,Power Dissipation Pd:103W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case RoHS Compliant: Yes22
    • 25:$73.3300
    • 10:$74.8000
    • 5:$76.7800
    • 1:$78.2100
    NXH80B120H2Q0SG
    DISTI # 863-NXH80B120H2Q0SG    		ON SemiconductorIGBT Modules PIM 1200V 40A DU BST SiC DIODE
    RoHS: Compliant    		23
    • 1:$77.4400
    • 5:$76.0200
    • 10:$74.0600
    • 25:$72.6000
    NXH80B120H2Q0SG
    DISTI # 1723298    		ON SemiconductorINTELLIGENT POWER MODULE 40A 1200V, PU24
    • 24:£51.6730
    NXH80B120H2Q0SG
    DISTI # 2835630    		ON SemiconductorIGBT, MODULE, N-CH, 1.2KV, 40A
    RoHS: Compliant    		22
    • 24:$113.0600
    • 1:$120.3500
    NXH80B120H2Q0SG
    DISTI # 2835630    		ON SemiconductorIGBT, MODULE, N-CH, 1.2KV, 40A22
    • 50:£54.2800
    • 10:£55.3900
    • 5:£58.0000
    • 1:£59.0900
    Imagen Parte # Descripción
    NXH80B120H2Q0SG

    Mfr.#: NXH80B120H2Q0SG

    OMO.#: OMO-NXH80B120H2Q0SG

    		 IGBT Modules PIM 1200V 40A DU BST SiC DIODE
    NXH80B120H2Q0SG

    Mfr.#: NXH80B120H2Q0SG

    OMO.#: OMO-NXH80B120H2Q0SG-ON-SEMICONDUCTOR

    		 PIM 1200V, 40A DUAL BOOST
    Disponibilidad
    Valores:
    23
    En orden:
    2006
    Ingrese la cantidad:
    El precio actual de NXH80B120H2Q0SG es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    77,44 US$
    77,44 US$
    5
    76,02 US$
    380,10 US$
    10
    74,06 US$
    740,60 US$
    25
    72,60 US$
    1 815,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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