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IRLHS6342TRPBF

IRLHS6342TRPBF
Mfr. #:
IRLHS6342TRPBF
Fabricante:
Infineon / IR
Descripción:
MOSFET 30V 1 N-CH HEXFET 15.5mOhms 11nC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRLHS6342TRPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRLHS6342TRPBF DatasheetIRLHS6342TRPBF Datasheet (P4-P6)IRLHS6342TRPBF Datasheet (P7-P9)
ECAD Model:
Más información:
IRLHS6342TRPBF más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PQFN-6
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
19 A
Rds On - Resistencia de la fuente de drenaje:
15.5 mOhms
Vgs - Voltaje puerta-fuente:
12 V
Qg - Carga de puerta:
11 nC
Pd - Disipación de energía:
2.1 W
Configuración:
Único
Embalaje:
Carrete
Altura:
0.9 mm
Longitud:
2 mm
Tipo de transistor:
1 N-Channel
Ancho:
2 mm
Marca:
Infineon / IR
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
4000
Subcategoría:
MOSFET
Parte # Alias:
SP001573840
Unidad de peso:
0.002258 oz
Tags
IRLHS634, IRLHS63, IRLHS6, IRLHS, IRLH, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 2mm X 2mm PQFN package, PG-TSDSON-6, RoHS
***ure Electronics
Single N-Channel 30 V 19.5 mOhm 11 nC HEXFET® Power Mosfet - PQFN 2 x 2 mm
***ment14 APAC
N CH MOSFET, 30V, 8.7A, 6-PQFN; Transist; N CH MOSFET, 30V, 8.7A, 6-PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:8.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.1V
***nell
MOSFET,N CH,30V,8.7A,PQFN22; Continuous Drain Current Id:8.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.012ohm; Rds(on) Test Voltage Vgs:4.5V; Voltage Vgs Max:12V; Transistor Case Style:QFN; No. of Pins:6; SVHC:No SVHC (15-Dec-2010); Operating Temperature Range:-55°C to +150°C; Power Dissipation Pd:2.1W
***ineon
Benefits: RoHS Compliant; Low RDS(on); Low Profile (less than 1.0 mm); Compatible with Existing Surface Mount Techniques; Low Junction to PCB Thermal Resistance; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; DC Switches; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch; Load Switch High Side; Load Switch Low Side
Wireless Charging Solutions
Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.
Ultra Compact PQFN HEXFET® Power MOSFETs
Infineon Ultra Compact PQFN HEXFET® Power MOSFETs deliver an ultra-compact, high density and efficient solution for a wide variety of lower power applications including smart phones, tablet PCs, camcorders, digital still cameras, notebook PC, server and network communications equipment. These Ultra Compact PQFN HEXFET® Power MOSFETs come in a 2x2mm package and are available in 20 V, 25 V and 30 V with standard or logic level gate drive. They utilize Infineon latest low voltage N-Channel and P-Channel silicon technologies to offer very low on-resistance (RDS(on)), and high power density.Learn More
Inductive Wireless Charging Solutions
Infineon Technologies Inductive Wireless Charging Solutions use electromagnetic fields to transfer power from a transmitter to a receiver application. This technology charges batteries without a physical connection, all thanks to a wireless charging power supply. The benefits for wireless charging in applications are not having to plug in a device and no plug compatibility issues. It’s also safer since there is no contact with exposed electrical connectors. Wireless charging is more reliable in harsher environments, like drilling and mining. It also allows for seamless on-the-go charging whether in the car or in public places. Finally, it eliminates tangled charging cables while charging multiple devices in parallel.
Parte # Mfg. Descripción Valores Precio
IRLHS6342TRPBF
DISTI # V72:2272_13889593		Infineon Technologies AGTrans MOSFET N-CH 30V 8.7A 6-Pin PQFN EP T/R
RoHS: Compliant		4850
  • 3000:$0.1773
  • 1000:$0.1792
  • 500:$0.2210
  • 250:$0.2234
  • 100:$0.2259
  • 25:$0.3240
  • 10:$0.3281
  • 1:$0.3765
IRLHS6342TRPBF
DISTI # IRLHS6342TRPBFCT-ND		Infineon Technologies AGMOSFET N-CH 30V 8.7A 2X2 PQFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		7732In Stock
  • 1000:$0.2408
  • 500:$0.3116
  • 100:$0.4249
  • 10:$0.5670
  • 1:$0.6700
IRLHS6342TRPBF
DISTI # IRLHS6342TRPBFDKR-ND		Infineon Technologies AGMOSFET N-CH 30V 8.7A 2X2 PQFN
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		7732In Stock
  • 1000:$0.2408
  • 500:$0.3116
  • 100:$0.4249
  • 10:$0.5670
  • 1:$0.6700
IRLHS6342TRPBF
DISTI # IRLHS6342TRPBFTR-ND		Infineon Technologies AGMOSFET N-CH 30V 8.7A PQFN
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		4000In Stock
  • 4000:$0.2131
IRLHS6342TRPBF
DISTI # 26196121		Infineon Technologies AGTrans MOSFET N-CH 30V 8.7A 6-Pin PQFN EP T/R
RoHS: Compliant		4850
  • 3000:$0.1773
  • 1000:$0.1792
  • 500:$0.2210
  • 250:$0.2234
  • 100:$0.2259
  • 51:$0.3240
IRLHS6342TRPBF
DISTI # 30609428		Infineon Technologies AGTrans MOSFET N-CH 30V 8.7A 6-Pin PQFN EP T/R
RoHS: Compliant		4000
  • 56:$0.4475
IRLHS6342TRPBF
DISTI # 27495321		Infineon Technologies AGTrans MOSFET N-CH 30V 8.7A 6-Pin PQFN EP T/R
RoHS: Compliant		1811
  • 391:$0.1600
IRLHS6342TRPBF
DISTI # IRLHS6342TRPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 8.7A 6-Pin PQFN EP T/R - Cut TR (SOS) (Alt: IRLHS6342TRPBF)
RoHS: Compliant
Min Qty: 1
Container: Cut Tape		Americas - 1450
  • 1:$0.1519
  • 40:$0.1509
  • 100:$0.1509
  • 200:$0.1499
  • 500:$0.1499
  • 1000:$0.1499
  • 2000:$0.1489
IRLHS6342TRPBF
DISTI # IRLHS6342TRPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 8.7A 6-Pin PQFN EP T/R (Alt: IRLHS6342TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Asia - 0
  • 4000:$0.1674
  • 8000:$0.1606
  • 12000:$0.1584
  • 20000:$0.1522
  • 40000:$0.1503
  • 100000:$0.1465
  • 200000:$0.1429
IRLHS6342TRPBF
DISTI # IRLHS6342TRPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 8.7A 6-Pin PQFN EP T/R - Tape and Reel (Alt: IRLHS6342TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 0
  • 4000:$0.1439
  • 8000:$0.1379
  • 16000:$0.1329
  • 24000:$0.1289
  • 40000:$0.1269
IRLHS6342TRPBF
DISTI # SP001573840		Infineon Technologies AGTrans MOSFET N-CH 30V 8.7A 6-Pin PQFN EP T/R (Alt: SP001573840)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Europe - 0
  • 4000:€0.2449
  • 8000:€0.1909
  • 16000:€0.1559
  • 24000:€0.1319
  • 40000:€0.1219
IRLHS6342TRPBF
DISTI # 25T5527		Infineon Technologies AGN CHANNEL MOSFET, 30V, 8.7A, 6-PQFN,Transistor Polarity:N Channel,Continuous Drain Current Id:8.7A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.012ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1.1V RoHS Compliant: Yes1811
  • 1:$0.1280
  • 25:$0.1280
  • 50:$0.1280
  • 100:$0.1280
  • 250:$0.1280
  • 500:$0.1280
  • 1000:$0.1280
IRLHS6342TRPBF.
DISTI # 29AC7092		Infineon Technologies AGContinuous Drain Current Id:8.7A,Drain Source Voltage Vds:30V,Automotive Qualification Standard:- RoHS Compliant: Yes0
    IRLHS6342TRPBF
    DISTI # 70411471    		Infineon Technologies AGIRLHS6342TRPBF N-channel MOSFET Transistor,8.7 A,30 V,6-Pin PQFN
    RoHS: Compliant    		0
    • 10:$0.5270
    IRLHS6342TRPBF
    DISTI # 942-IRLHS6342TRPBF    		Infineon Technologies AGMOSFET 30V 1 N-CH HEXFET 15.5mOhms 11nC
    RoHS: Compliant    		6047
    • 1:$0.5500
    • 10:$0.4520
    • 100:$0.2760
    • 1000:$0.2130
    • 4000:$0.1820
    IRLHS6342TRPBFInternational RectifierPower Field-Effect Transistor, 8.7A I(D), 30V, 0.0195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		4000
    • 1000:$0.1700
    • 500:$0.1800
    • 100:$0.1900
    • 25:$0.2000
    • 1:$0.2100
    IRLHS6342TRPBF
    DISTI # 7377259P    		Infineon Technologies AGMOSFET N-CHANNEL 30V 8.7A HEXFET PQFN6EP, RL2030
    • 100:£0.1920
    • 200:£0.1700
    • 500:£0.1590
    IRLHS6342TRPBFInfineon Technologies AGINSTOCK5052
      IRLHS6342TRPBF
      DISTI # 2131526      		Infineon Technologies AGN CH MOSFET, 30V, 8.7A, 6-PQFN
      RoHS: Compliant      		1811
      • 1:$0.8710
      • 10:$0.7160
      • 100:$0.4370
      • 1000:$0.3380
      • 4000:$0.2880
      IRLHS6342TRPBF
      DISTI # 2131526      		Infineon Technologies AGN CH MOSFET, 30V, 8.7A, 6-PQFN
      RoHS: Compliant      		1811
      • 1:£0.4940
      • 10:£0.2970
      • 100:£0.2020
      • 250:£0.1830
      • 500:£0.1710
      IRLHS6342TRPBF
      DISTI # C1S322000502233      		Infineon Technologies AGTrans MOSFET N-CH 30V 8.7A 6-Pin PQFN EP T/R
      RoHS: Compliant      		4850
      • 250:$0.2313
      • 100:$0.2320
      • 25:$0.3293
      • 10:$0.3310
      IRLHS6342TRPBF
      DISTI # C1S322000502224      		Infineon Technologies AGTrans MOSFET N-CH 30V 8.7A 6-Pin PQFN EP T/R
      RoHS: Compliant      		4000
      • 100:$0.1940
      • 50:$0.2380
      • 10:$0.3580
      IRLHS6342TRPBF
      DISTI # C1S327400181130      		Infineon Technologies AGTrans MOSFET N-CH 30V 8.7A 6-Pin PQFN EP T/R
      RoHS: Compliant      		4000
      • 100:$0.2640
      • 50:$0.2880
      • 10:$0.4330
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      		 MULTI CHANNEL CURRENT SENSE L/H SIDE
      Disponibilidad
      Valores:
      Available
      En orden:
      1989
      Ingrese la cantidad:
      El precio actual de IRLHS6342TRPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,51 US$
      0,51 US$
      10
      0,43 US$
      4,28 US$
      100
      0,26 US$
      26,10 US$
      1000
      0,20 US$
      201,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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