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IGW60T120FKSA1

IGW60T120FKSA1
Mfr. #:
IGW60T120FKSA1
Fabricante:
Infineon Technologies
Descripción:
IGBT Transistors LOW LOSS IGBT TECH 1200V 60A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IGW60T120FKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IGW60T120FKSA1 DatasheetIGW60T120FKSA1 Datasheet (P4-P6)IGW60T120FKSA1 Datasheet (P7-P9)IGW60T120FKSA1 Datasheet (P10-P12)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-247-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
1200 V
Voltaje de saturación colector-emisor:
1.7 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
100 A
Pd - Disipación de energía:
375 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
TRENCHSTOP IGBT
Embalaje:
Tubo
Marca:
Infineon Technologies
Corriente de fuga puerta-emisor:
600 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
240
Subcategoría:
IGBT
Nombre comercial:
TRENCHSTOP
Parte # Alias:
IGW60T120 IGW6T12XK SP000013906
Unidad de peso:
0.191185 oz
Tags
IGW60T, IGW6, IGW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 0.2pF 25volts C0G 0.05pF
***ource
IGBT Discretes; Package: PG-TO247-3; Switching Frequency: TRENCHSTOP™ 2-20kHz; Package: TO-247; VCE max: 1,200.0 V; ICmax @ 25°: 100.0 A; ICmax @ 100°: 60.0 A
***ineon SCT
The 1200 V, 60 A single TRENCHSTOP™ IGBT3 in a TO247 package, provides significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO247-3, RoHS
***ment14 APAC
IGBT,1200V,60A,TO247; Transistor Type:IGBT; DC Collector Current:60A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:375W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:375W
***trelec
Configuration = Single / Continuous Collector Current (Ic) A = 60 / Collector-Emitter Voltage (Vceo) kV = 1.2 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.7 / Emitter Leakage Current nA = 600 / Power Dissipation (Pd) W = 375 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 150 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled HE diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar inverters; Motor control; Major home appliances; Welding; Other hard switching applications
***p One Stop
Trans IGBT Chip N-CH 600V 100A 333000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
IKW50N60H3 Series 600 V 100 A Trench Field Stop IGBT - PG-TO-247-3
***Parts
IGBTs - Single, Transistors N-Channel, PG-TO247-3 100A 600V 333W Through Hole
***ineon SCT
600 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS
***nell
IGBT, SINGLE, 600V, 100A, TO-247-3; DC Collector Current: 100A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 333W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of
***ineon
Infineons high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineons HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. | Summary of Features: Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz; Low switching losses for high efficiency; Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP technology; Fast switching behavior with low EMI emissions; Optimized diode for target applications, meaning further improvement in switching losses; Low gate resistor selection possible (down to 5) whilst maintaining excellent switching behaviour; Short circuit capability; Offering T j(max) of 175C; Packaged with and without freewheeling diode for increased design freedom | Benefits: Excellent cost/performance; Low switching and conduction losses; Very good EMI behavior; A small gate resistor for reduced delay time and voltage overshoot; Smaller die sizes -> smaller packages; Best-in-class IGBT efficiency and EMI behavior | Target Applications: Welding Inverters; Solar Inverters; UPS; All hard switching applications
***ical
Trans IGBT Chip N-CH 600V 90A 333000mW 3-Pin(3+Tab) TO-247 Tube
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 9.9pF 25volts C0G +/-0.25pF
***ment14 APAC
IGBT,600V,50A,TO247; Transistor Type:IGBT; DC Collector Current:50A; Collector Emitter Voltage Vces:2V; Power Dissipation Pd:333W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:333W
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
***ical
Trans IGBT Chip N-CH 600V 100A 333000mW 3-Pin(3+Tab) TO-247 Tube
***ineon SCT
High speed 600 V, 50 A single TRENCHSTOP™ IGBT3 in a TO247 package provides the best compromise between switching and conduction losses, PG-TO247-3, RoHS
***ment14 APAC
IGBT,600V,50A,TO247; Transistor Type:IGBT; DC Collector Current:50A; Collector Emitter Voltage Vces:2.3V; Power Dissipation Pd:333W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:333W
***ineon
Infineons high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineons HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. | Summary of Features: Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz; Low switching losses for high efficiency; Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP technology; Fast switching behavior with low EMI emissions; Optimized diode for target applications, meaning further improvement in switching losses; Low gate resistor selection possible (down to 5) whilst maintaining excellent switching behaviour; Short circuit capability; Offering T j(max) of 175C; Packaged with and without freewheeling diode for increased design freedom | Benefits: Excellent cost/performance; Low switching and conduction losses; Very good EMI behavior; A small gate resistor for reduced delay time and voltage overshoot; Smaller die sizes -> smaller packages; Best-in-class IGBT efficiency and EMI behavior | Target Applications: Welding Inverters; Solar Inverters; UPS; All hard switching applications
***ical
Trans IGBT Chip N-CH 600V 100A 417000mW 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247AD
*** Electronics
ON SEMICONDUCTOR NGTB50N60S1WG IGBT Single Transistor, 100 A, 1.8 V, 417 W, 600 V, TO-247, 3 Pins
***ical
Trans IGBT Chip N-CH 600V 100A 595000mW 3-Pin(3+Tab) TO-247 Tube
*** Electronics
ON SEMICONDUCTOR NGTB75N60SWG IGBT Single Transistor, 100 A, 1.7 V, 595 W, 600 V, TO-247, 3 Pins
***r Electronics
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247AD
***nell
IGBT, SINGLE, 600V, 100A, TO-247-3;
***ical
Trans IGBT Chip N-CH 650V 100A 340000mW 3-Pin(3+Tab) TO-247 Rail
***r Electronics
Insulated Gate Bipolar Transistor, 100A I(C), 650V V(BR)CES, N-Channel, TO-247AB
***emi
650V, 50A, Field Stop Trench IGBT
*** Electronic Components
IGBT Transistors 650 V 100 A 240 W
***ark
Fs1Tigbt To247 50A 650V Rohs Compliant: Yes
***i-Key
IGBT TRENCH/FS 650V 100A TO247-3
***DA Technology Co., Ltd.
Product Description Demo for Development.
***rchild Semiconductor
Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer optimum performance for solar inverter, UPS, welder, and digital power generator where low conduction and switching losses are essential.
Parte # Mfg. Descripción Valores Precio
IGW60T120FKSA1
DISTI # V99:2348_06377097		Infineon Technologies AGTrans IGBT Chip N-CH 1200V 100A 375000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		127
  • 1000:$4.5540
  • 500:$5.1250
  • 100:$5.9380
  • 10:$7.1570
  • 1:$8.7021
IGW60T120FKSA1
DISTI # V36:1790_06377097		Infineon Technologies AGTrans IGBT Chip N-CH 1200V 100A 375000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
  • 240:$3.9090
IGW60T120FKSA1
DISTI # IGW60T120FKSA1-ND		Infineon Technologies AGIGBT 1200V 100A 375W TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		1425In Stock
  • 720:$5.4612
  • 240:$6.2716
  • 25:$7.2228
  • 10:$7.5750
  • 1:$8.3900
IGW60T120FKSA1
DISTI # 27116210		Infineon Technologies AGTrans IGBT Chip N-CH 1200V 100A 375000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		240
  • 4:$3.1684
IGW60T120FKSA1
DISTI # 27551308		Infineon Technologies AGTrans IGBT Chip N-CH 1200V 100A 375000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		127
  • 2:$8.7021
IGW60T120XK
DISTI # IGW60T120FKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 100A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: IGW60T120FKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 2400:$3.1900
  • 1440:$3.2900
  • 960:$3.3900
  • 480:$3.4900
  • 240:$3.6900
IGW60T120FKSA1
DISTI # 13T9425		Infineon Technologies AGIGBT Single Transistor, 60 A, 2.4 V, 375 W, 1.2 kV, TO-247, 3 RoHS Compliant: Yes0
  • 500:$5.2500
  • 250:$5.7600
  • 100:$6.0300
  • 50:$6.4900
  • 25:$6.9500
  • 10:$7.2800
  • 1:$8.0600
IGW60T120FKSA1
DISTI # 726-IGW60T120FKSA1		Infineon Technologies AGIGBT Transistors LOW LOSS IGBT TECH 1200V 60A
RoHS: Compliant		233
  • 1:$7.9800
  • 10:$7.2100
  • 25:$6.8800
  • 100:$5.9700
  • 250:$5.7000
  • 500:$5.2000
IGW60T120
DISTI # 726-IGW60T120		Infineon Technologies AGIGBT Transistors LOW LOSS IGBT TECH 1200V 60A
RoHS: Compliant		229
  • 1:$7.9800
  • 10:$7.2100
  • 25:$6.8800
  • 100:$5.9700
  • 250:$5.7000
  • 500:$5.2000
IGW60T120FKSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, TO-247AD
RoHS: Compliant		18018
  • 1000:$3.0400
  • 500:$3.2000
  • 100:$3.3300
  • 25:$3.4700
  • 1:$3.7400
IGW60T120FKSA1
DISTI # 9064472		Infineon Technologies AGTRANSISTOR IGBT N-CH 1.2KV 100A TO247, PK118
  • 100:£3.8100
  • 40:£4.2850
  • 20:£4.6000
  • 4:£4.8500
  • 2:£5.5200
IGW60T120FKSA1
DISTI # 9064472P		Infineon Technologies AGTRANSISTOR IGBT N-CH 1.2KV 100A TO247, TU448
  • 100:£3.8100
  • 40:£4.2850
  • 20:£4.6000
  • 4:£4.8500
IGW60T120FKSA1
DISTI # 1832376		Infineon Technologies AGIGBT,1200V,60A,TO247383
  • 100:£4.6400
  • 50:£5.0000
  • 10:£5.3500
  • 5:£6.2100
  • 1:£6.7600
IGW60T120FKSA1
DISTI # 1832376		Infineon Technologies AGIGBT,1200V,60A,TO247
RoHS: Compliant		375
  • 500:$7.8400
  • 250:$8.5900
  • 100:$9.0000
  • 25:$10.3700
  • 10:$10.8700
  • 1:$12.0300
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Disponibilidad
Valores:
231
En orden:
2214
Ingrese la cantidad:
El precio actual de IGW60T120FKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
7,98 US$
7,98 US$
10
7,21 US$
72,10 US$
25
6,88 US$
172,00 US$
100
5,97 US$
597,00 US$
250
5,70 US$
1 425,00 US$
500
5,20 US$
2 600,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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