IRF7907PBF

IRF7907PBF
Mfr. #:
IRF7907PBF
Fabricante:
Infineon Technologies
Descripción:
MOSFET 2N-CH 30V 9.1A/11A 8SOIC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRF7907PBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF7907PBF DatasheetIRF7907PBF Datasheet (P4-P6)IRF7907PBF Datasheet (P7-P9)IRF7907PBF Datasheet (P10)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
FET: matrices
Serie
HEXFETR
embalaje
Embalaje alternativo de tubo
Unidad de peso
0.019048 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
8-SOIC (0.154", 3.90mm Width)
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
2 Channel
Paquete de dispositivo de proveedor
8-SO
Configuración
Doble
Tipo FET
2 N-Channel (Dual)
Potencia máxima
2W
Tipo transistor
2 N-Channel
Drenaje-a-fuente-voltaje-Vdss
30V
Entrada-Capacitancia-Ciss-Vds
850pF @ 15V
Función FET
Puerta de nivel lógico
Corriente-Continuo-Drenaje-Id-25 ° C
9.1A, 11A
Rds-On-Max-Id-Vgs
16.4 mOhm @ 9.1A, 10V
Vgs-th-Max-Id
2.35V @ 25μA
Puerta-Carga-Qg-Vgs
10nC @ 4.5V
Disipación de potencia Pd
2.0 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
3.4 ns 5.3 ns
Hora de levantarse
9.3 ns 14 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
9.1 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Resistencia a la fuente de desagüe de Rds
20.5 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
8 ns 13 ns
Tiempo de retardo de encendido típico
6 ns 8 ns
Qg-Gate-Charge
6.7 nC
Modo de canal
Mejora
Tags
IRF7907, IRF790, IRF79, IRF7, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 30V;ID 9.1 A (Control FET), 11 A (Synchronous FET);SO-8
***ernational Rectifier
30V Dual N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package
***p One Stop Japan
Trans MOSFET N-CH 30V 9.1A/11A 8-Pin SOIC Tube
***ical
Trans MOSFET N-CH 30V 9.1A/11A 8-Pin SOIC T/R
***Components
MOSFET N-Channel 30V 9.1A/11A SOIC8
***i-Key
MOSFET N-CHAN DUAL 30V 8-SOIC
***ronik
2N-CH 30V 9,1A 11,8mOhm SO8 RoHSconf
***ineon
Benefits: RoHS Compliant; Low RDS(on); Low Thermal resistance to PCB; Compatible with Existing Surface Mount Techniques; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Dual N-Channel MOSFET
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:11A; On Resistance, Rds(on):11.8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SO-8 ;RoHS Compliant: Yes
***nell
MOSFET, NN; Transistor Type:MOSFET; Transistor Polarity:Dual N; Voltage, Vds Typ:30V; Current, Id Cont:11A; Resistance, Rds On:11.8mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.8V; Case Style:SOIC; Termination Type:SMD; Current, Id Cont N Channel 2:9.1A; Current, Id Cont N Channel 3:11A; Resistance, Rds on N Channel 1:13.7ohm; Resistance, Rds on N Channel 2:9.8ohm
***ment14 APAC
MOSFET,NN CH,30V,9.1A,SO8; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:11A; Drain Source Voltage Vds:30V; Module Configuration:Dual; On Resistance Rds(on):9.8mohm; Power Dissipation Pd:2W
Parte # Mfg. Descripción Valores Precio
IRF7907PBF
DISTI # IRF7907PBF-ND
Infineon Technologies AGMOSFET 2N-CH 30V 9.1A/11A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Tube
Limited Supply - Call
    IRF7907PBF
    DISTI # 70017286
    Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 30V,ID 9.1 A (Control FET),11 A (Synchronous FET),SO-8
    RoHS: Compliant
    0
    • 3800:$1.3400
    • 7600:$1.3130
    • 19000:$1.2730
    • 38000:$1.2190
    • 95000:$1.1390
    IRF7907PBF
    DISTI # 942-IRF7907PBF
    Infineon Technologies AGMOSFET 30V DUAL N-CH HEXFET 20V VGS MAX
    RoHS: Compliant
    0
      IRF7907PBFInternational Rectifier 2849
        IRF7907PBF
        DISTI # 1843031
        Infineon Technologies AGMOSFET,NN CH,30V,9.1A,SO8
        RoHS: Compliant
        0
        • 1:$1.7200
        • 10:$1.5300
        • 100:$1.1900
        • 500:$0.9820
        • 1000:$0.7760
        Imagen Parte # Descripción
        IRF7904TRPBF

        Mfr.#: IRF7904TRPBF

        OMO.#: OMO-IRF7904TRPBF

        MOSFET MOSFT DUAL NCh 30V 7.6A
        IRF7946TRPbF

        Mfr.#: IRF7946TRPbF

        OMO.#: OMO-IRF7946TRPBF

        MOSFET 40V 198A 1.5mOhm 141nC StrongIRFET
        IRF7905PBF

        Mfr.#: IRF7905PBF

        OMO.#: OMO-IRF7905PBF

        MOSFET 30V DUAL N-CH HEXFET 20V VGS MAX
        IRF7901D1TR

        Mfr.#: IRF7901D1TR

        OMO.#: OMO-IRF7901D1TR-INFINEON-TECHNOLOGIES

        MOSFET 2N-CH 30V 6.2A 8SOIC
        IRF7902TRPBF  28K

        Mfr.#: IRF7902TRPBF 28K

        OMO.#: OMO-IRF7902TRPBF-28K-1190

        Nuevo y original
        IRF7904TRPBF-1

        Mfr.#: IRF7904TRPBF-1

        OMO.#: OMO-IRF7904TRPBF-1-1190

        MOSFET 2N-CH 30V 7.6A/11A 8-SOIC
        IRF7907PBF

        Mfr.#: IRF7907PBF

        OMO.#: OMO-IRF7907PBF-INFINEON-TECHNOLOGIES

        MOSFET 2N-CH 30V 9.1A/11A 8SOIC
        IRF7907PBF-1

        Mfr.#: IRF7907PBF-1

        OMO.#: OMO-IRF7907PBF-1-1190

        Nuevo y original
        IRF7907TRPBF

        Mfr.#: IRF7907TRPBF

        OMO.#: OMO-IRF7907TRPBF-INFINEON-TECHNOLOGIES

        MOSFET 2N-CH 30V 9.1A/11A 8-SOIC
        IRF7902TRPBF

        Mfr.#: IRF7902TRPBF

        OMO.#: OMO-IRF7902TRPBF-INFINEON-TECHNOLOGIES

        RF Bipolar Transistors MOSFET MOSFT DUAL NCh 30V 9.7A
        Disponibilidad
        Valores:
        Available
        En orden:
        2500
        Ingrese la cantidad:
        El precio actual de IRF7907PBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        1,71 US$
        1,71 US$
        10
        1,62 US$
        16,23 US$
        100
        1,54 US$
        153,77 US$
        500
        1,45 US$
        726,10 US$
        1000
        1,37 US$
        1 366,80 US$
        Empezar con
        Nuevos productos
        • XDPL8218 Voltage Flyback IC
          Infineon's XDPL8218 is a configurable single-stage SSR flyback controller with high power factor, standby power performance, and constant voltage output.
        • Compare IRF7907PBF
          IRF7907PBF vs IRF7907PBF1 vs IRF7907TR
        • LMD and LMS Modular Connectors
          LMD and LMS modular connectors from Amphenol eliminate costly PC board and associated hardware therefore reducing assembly and production costs.
        • XC6216 Series Voltage Regulator
          Torex's XC6216 series voltage regulator with a maximum output current of 150 mA and 28 V operating voltage used in a variety of consumer products.
        • TLF502x1EL Step-Down DC / DC
          Infineon's TLF502x1-family are asynchronous DC / DCs with integrated power transistor providing 500 mA output current at 5 V (±2%).
        • 600 V CoolMOS™ P7 Power Transistors
          Infineon‘s 600 V CoolMOS™ P7 series SJ MOSFET in TO-247 4-pin packaging with asymmetric leads.
        Top