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RGT40NS65DGTL

RGT40NS65DGTL
Mfr. #:
RGT40NS65DGTL
Fabricante:
Rohm Semiconductor
Descripción:
IGBT Transistors 650V 20A IGBT Stop Trench
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
RGT40NS65DGTL Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
RGT40NS65DGTL DatasheetRGT40NS65DGTL Datasheet (P4)
ECAD Model:
Más información:
RGT40NS65DGTL más información
Atributo del producto
Valor de atributo
Fabricante:
Semiconductor ROHM
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-263-3
Estilo de montaje:
SMD / SMT
Voltaje colector-emisor VCEO Max:
650 V
Voltaje de saturación colector-emisor:
1.65 V
Voltaje máximo del emisor de puerta:
30 V
Corriente continua del colector a 25 C:
40 A
Pd - Disipación de energía:
161 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 175 C
Serie:
RGT40NS65D
Embalaje:
Carrete
Corriente continua de colector Ic Max:
40 A
Rango de temperatura de funcionamiento:
- 40 C to + 175 C
Marca:
Semiconductor ROHM
Corriente continua del colector:
20 A
Corriente de fuga puerta-emisor:
+/- 200 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
1000
Subcategoría:
IGBT
Parte # Alias:
RGT40NS65D(LPDS)
Unidad de peso:
0.068654 oz
Tags
RGT40N, RGT4, RGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 40A 161000mW 3-Pin(2+Tab) LPDS T/R
***ark
Igbt, Single, 650V, 40A, To-263S-3 Rohs Compliant: Yes
***nell
IGBT, SINGLE, 650V, 40A, TO-263S-3; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 161W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-263S; No. of
***i-Key
IGBT TRENCH FIELD 650V 40A LPDS
***ineon SCT
Copacked 600V IGBT in a D2-Pak package with a hyperfast 1-8 kHz diode, D2PAKCOPAK, RoHS
***ow.cn
Trans IGBT Chip N-CH 600V 31A 100000mW 3-Pin(2+Tab) D2PAK Tube
***ineon
Target Applications: Air Conditioner; Dryer; Pump; Solar; UPS; Washing Machine
***ment14 APAC
IGBT, D2-PAK; Transistor Type:IGBT; DC Collector Current:31A; Collector Emitter Voltage Vces:1.8V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:17A; Fall Time Max:230ns; Package / Case:D2-PAK; Power Dissipation Max:100W; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulsed Current Icm:120A; Rise Time:27ns; Termination Type:SMD; Transistor Polarity:N Channel; Voltage Vces:600V
***ical
Trans IGBT Chip N-CH 600V 32A 140000mW 3-Pin(2+Tab) D2PAK Tube
***ineon
Target Applications: Dryer; Fan; Lighting HID; Pump; Refridgeration; Solar; UPS; Washing Machine
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 32A I(C), 600V V(BR)CES, N-Channel
*** Electronic Components
IGBT Transistors 600V TRENCH IGBT ULTRAFAST
***ment14 APAC
IGBT, SINGLE, 1.55V, 32A, TO-263AB
***ical
Trans IGBT Chip N-CH 600V 47A 3-Pin(2+Tab) D2PAK Tube
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 47A I(C), 600V V(BR)CES, N-Channel, TO-263AB
*** Electronic Components
IGBT Transistors 600V TRENCH IGBT ULTRAFAST
***ark
Igbt, Single, 600V, 47A, To-263Ab-3
***i-Key Marketplace
IRGS4630 - DISCRETE IGBT WITH AN
***nell
IGBT, SINGLE, 600V, 47A, TO-263; DC Collector Current: 47A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 206W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-263AB; No. of Pi
***icroelectronics
Trench gate field-stop IGBT M series, 650 V 15 A low loss
***ow.cn
Trans IGBT Chip N-CH 650V 30A 136000mW 3-Pin(2+Tab) D2PAK T/R
***icroelectronics SCT
Short-circuit rugged IGBT, D2PAK, Tape and Reel
***r Electronics
Insulated Gate Bipolar Transistor, 30A I(C), 650V V(BR)CES, N-Channel, TO-263AB
***i-Key
TRENCH GATE FIELD-STOP IGBT M SE
***-Wing Technology
Tube Surface Mount N-CHANNEL SINGLE IGBT Transistor 2.5V @ 15V 12A 45A 167W 6ns/40ns
***et
TO-263AB, SINGLE, 600V SIZE 3 N-CH SMPS II IGBT
***i-Key
IGBT N-CH SMPS 600V 45A TO263AB
***ical
Trans IGBT Chip N-CH 600V 40A 208000mW Automotive 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB
***or
IGBT FIELD STOP 600V 40A D2PAK
***ure Electronics
IGBT Transistors 600V 20A FSP IGBT
***ment14 APAC
IGBT, 600V, 40A, 150DEG C, 208W;
***rchild Semiconductor
Using novel field-stop IGBT technology, Fairchild’s new series of field-stop IGBTs offer optimum performance for automotive chargers, inverters, and other applications where low conduction and switching losses are essential.
Field Stop Trench IGBTs
ROHM Field Stop Trench IGBTs are energy saving high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit withstand time, and built-in very fast & soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioner, welder, and general inverters for industrial use.
Parte # Mfg. Descripción Valores Precio
RGT40NS65DGTL
DISTI # RGT40NS65DGTLCT-ND		ROHM SemiconductorIGBT 650V 40A 161W TO-263S
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1487In Stock
  • 500:$1.4062
  • 250:$1.6071
  • 100:$1.8080
  • 25:$2.0088
  • 10:$2.2500
  • 1:$2.4900
RGT40NS65DGTL
DISTI # RGT40NS65DGTLDKR-ND		ROHM SemiconductorIGBT 650V 40A 161W TO-263S
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1487In Stock
  • 500:$1.4062
  • 250:$1.6071
  • 100:$1.8080
  • 25:$2.0088
  • 10:$2.2500
  • 1:$2.4900
RGT40NS65DGTL
DISTI # RGT40NS65DGTLTR-ND		ROHM SemiconductorIGBT 650V 40A 161W TO-263S
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		1000In Stock
  • 2000:$1.0532
  • 1000:$1.1312
RGT40NS65DGTL
DISTI # RGT40NS65DGTL		ROHM SemiconductorTrans IGBT Chip N-CH 650V 40A 3-Pin TO-263S T/R - Tape and Reel (Alt: RGT40NS65DGTL)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$1.1749
  • 2000:$1.1019
  • 4000:$1.0369
  • 6000:$0.9799
  • 10000:$0.9529
RGT40NS65DGTL
DISTI # 755-RGT40NS65DGTL		ROHM SemiconductorIGBT Transistors 650V 20A IGBT Stop Trench
RoHS: Compliant		1430
  • 1:$2.1900
  • 10:$1.8600
  • 100:$1.4900
  • 500:$1.3100
  • 1000:$1.0800
  • 2000:$1.0100
  • 5000:$0.9660
RGT40NS65DGTL
DISTI # IGBT2241		ROHM SemiconductorIGBT650V20A1,65VTO-262
RoHS: Compliant		Stock DE - 0Stock HK - 0Stock US - 0
  • 1000:$1.5700
  • 2000:$1.4700
  • 3000:$1.4200
  • 4000:$1.3100
RGT40NS65DGTLROHM SemiconductorIGBT Transistors 650V 20A IGBT Stop Trench
RoHS: Compliant		Americas -
    RGT40NS65DGTL
    DISTI # 2519780    		ROHM SemiconductorIGBT, SINGLE, 650V, 40A, TO-263S-3
    RoHS: Compliant    		0
    • 500:£0.9880
    • 250:£1.0600
    • 100:£1.1300
    • 10:£1.4200
    • 1:£1.8800
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    Disponibilidad
    Valores:
    Available
    En orden:
    1984
    Ingrese la cantidad:
    El precio actual de RGT40NS65DGTL es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    2,19 US$
    2,19 US$
    10
    1,86 US$
    18,60 US$
    100
    1,49 US$
    149,00 US$
    500
    1,31 US$
    655,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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