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IPA105N15N3GXKSA1

IPA105N15N3GXKSA1
Mfr. #:
IPA105N15N3GXKSA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-Ch 150V 37A TO220FP-3 OptiMOS 3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPA105N15N3GXKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220FP-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
150 V
Id - Corriente de drenaje continua:
37 A
Rds On - Resistencia de la fuente de drenaje:
9.1 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
55 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
40.5 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
OptiMOS
Embalaje:
Tubo
Altura:
16.15 mm
Longitud:
10.65 mm
Serie:
OptiMOS 3
Tipo de transistor:
1 N-Channel
Ancho:
4.85 mm
Marca:
Infineon Technologies
Transconductancia directa - Mín .:
33 S
Otoño:
9 ns
Tipo de producto:
MOSFET
Hora de levantarse:
20 ns
Cantidad de paquete de fábrica:
500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
35 ns
Tiempo típico de retardo de encendido:
17 ns
Parte # Alias:
G IPA105N15N3 IPA15N15N3GXK SP000677850
Unidad de peso:
0.211644 oz
Tags
IPA105N15N3G, IPA105N15N, IPA105, IPA10, IPA1, IPA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 150 V 10.5 mOhm 41 nC OptiMOS™ Power Mosfet - TO-220-3FP
***ow.cn
Trans MOSFET N-CH 150V 37A Automotive 3-Pin(3+Tab) TO-220FP Tube
***ponent Stockers USA
37 A 150 V 0.0105 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***ineon SCT
The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor, PG-TO220-3, RoHS
***nell
MOSFET, N-CH, 150V, 37A, TO-220FP-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 37A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.0091ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V;
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 37 / Drain-Source Voltage (Vds) V = 150 / ON Resistance (Rds(on)) mOhm = 10.5 / Gate-Source Voltage V = 20 / Fall Time ns = 9 / Rise Time ns = 20 / Turn-OFF Delay Time ns = 35 / Turn-ON Delay Time ns = 17 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 40.5
***ineon
The 150V OptiMOS achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS part. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V8 0V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.042Ohm;ID 43A;TO-220AB;PD 200W;VGS +/-20V
***ure Electronics
Single N-Channel 150 V 42 mOhm 200 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***p One Stop
Trans MOSFET N-CH 150V 43A 3-Pin(3+Tab) TO-220AB Tube
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 200 W
***roFlash
Power Field-Effect Transistor, 43A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
MOSFET, N, 150V, 43A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:37A; Drain Source Voltage Vds:150V; On Resistance Rds(on):42mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:43A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.75°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Pulse Current Idm:150A; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.042Ohm;ID 43A;TO-247AC;PD 200W;VGS +/-20V
***ure Electronics
Single N-Channel 150 V 0.042 Ohm 200 nC HEXFET® Power Mosfet - TO-247AC
***eco
IRFP3415PBF,MOSFET, 150V, 43A, 42 MOHM, 133.3 NC QG, TO-247A
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
*** Stop Electro
Power Field-Effect Transistor, 43A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
MOSFET, N, 150V, 43A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:43A; Drain Source Voltage Vds:150V; On Resistance Rds(on):42mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:200W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:43A; Junction to Case Thermal Resistance A:0.75°C/W; On State resistance @ Vgs = 10V:42mohm; Package / Case:TO-247AC; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:150A; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 43 / Drain-Source Voltage (Vds) V = 150 / ON Resistance (Rds(on)) mOhm = 42 / Gate-Source Voltage V = 20 / Fall Time ns = 69 / Rise Time ns = 55 / Turn-OFF Delay Time ns = 71 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 200
***ernational Rectifier
Automotive Q101 150V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package
***Yang
Trans MOSFET N-CH 150V 43A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube
***nell
MOSFET, N CH, 150V, 43A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:43A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.042ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:200W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; MSL:MSL 1 - Unlimited
***ineon
Benefits: Advanced planar technology; Dynamic dV/dT rating; 175C operating temperature; Fast switching; Fully Avalanche Rated; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
***emi
N-Channel UltraFET Power MOSFET 150V, 43A, 42mΩ
***Yang
Trans MOSFET N-CH 150V 43A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 43A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
N CH MOSFET, 150V, 43A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:43A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
***ponent Stockers USA
43 A 150 V 0.042 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***Yang
MOSFET 43a 150V 0.042 Ohm N-Ch MOSFET - Bulk
***i-Key
MOSFET N-CH 150V 43A TO-220AB
***el Electronic
IC WHITE LED DRIVER 28HTSSOP
***el Nordic
Contact for details
***ical
Trans MOSFET N-CH 150V 27.4A 3-Pin(3+Tab) TO-220FP Rail
***ure Electronics
Single N-Channel 150 V 33 W 39 nC Silicon Through Hole Mosfet - TO-220F
***emi
N-Channel PowerTrench® MOSFET 150V, 27.4A, 19mΩ
*** Stop Electro
Power Field-Effect Transistor, 27.4A I(D), 150V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Parte # Mfg. Descripción Valores Precio
IPA105N15N3GXKSA1
DISTI # V99:2348_06377966		Infineon Technologies AGTrans MOSFET N-CH 150V 37A Automotive 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant		540
  • 2500:$2.0800
  • 1000:$2.1960
  • 500:$2.5610
  • 250:$2.8289
  • 100:$2.9859
  • 10:$3.3840
  • 1:$3.8920
IPA105N15N3GXKSA1
DISTI # IPA105N15N3GXKSA1-ND		Infineon Technologies AGMOSFET N-CH 150V 37A TO220-FP
RoHS: Compliant
Min Qty: 1
Container: Tube		2737In Stock
  • 1000:$2.5994
  • 500:$3.0821
  • 100:$3.8062
  • 10:$4.6420
  • 1:$5.2000
IPA105N15N3GXKSA1
DISTI # 30704658		Infineon Technologies AGTrans MOSFET N-CH 150V 37A Automotive 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant		1000
  • 5000:$2.0832
  • 2500:$2.1600
  • 1000:$2.2752
  • 500:$2.6976
  • 250:$3.0048
  • 100:$3.1680
  • 10:$3.6480
IPA105N15N3GXKSA1
DISTI # 26197345		Infineon Technologies AGTrans MOSFET N-CH 150V 37A Automotive 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant		540
  • 500:$2.5570
  • 250:$2.8240
  • 100:$2.9810
  • 10:$3.3780
  • 3:$3.8840
IPA105N15N3GXKSA1
DISTI # IPA105N15N3GXKSA1		Infineon Technologies AGTrans MOSFET N-CH 150V 37A 3-Pin(3+Tab) TO-220 Full-Pak - Rail/Tube (Alt: IPA105N15N3GXKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 500:$2.3900
  • 1000:$2.2900
  • 2000:$2.1900
  • 3000:$2.0900
  • 5000:$2.0900
IPA105N15N3GXKSA1Infineon Technologies AGPower Field-Effect Transistor, 37A I(D), 150V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		618
  • 1000:$2.0400
  • 500:$2.1500
  • 100:$2.2400
  • 25:$2.3300
  • 1:$2.5100
IPA105N15N3GXKSA1
DISTI # 726-IPA105N15N3GXKSA		Infineon Technologies AGMOSFET N-Ch 150V 37A TO220FP-3 OptiMOS 3
RoHS: Compliant		500
  • 1:$4.4700
  • 10:$3.8000
  • 100:$3.3000
  • 250:$3.1300
  • 500:$2.8100
IPA105N15N3 G
DISTI # 726-IPA105N15N3G		Infineon Technologies AGMOSFET N-Ch 150V 37A TO220FP-3 OptiMOS 3
RoHS: Compliant		0
  • 1:$4.4700
  • 10:$3.8000
  • 100:$3.3000
  • 250:$3.1300
  • 500:$2.8100
IPA105N15N3GXKSA1
DISTI # 9062956P		Infineon Technologies AGMOSFET N-CHANNEL 150V 37A OPTIMOS TO220, TU372
  • 8:£2.8480
  • 40:£2.6180
  • 80:£2.4400
  • 200:£2.2650
IPA105N15N3GXKSA1
DISTI # C1S322000524767		Infineon Technologies AGTrans MOSFET N-CH 150V 37A Automotive 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant		540
  • 500:$2.5570
  • 250:$2.8240
  • 100:$2.9810
  • 10:$3.3780
  • 1:$3.8840
IPA105N15N3GXKSA1
DISTI # 2480794		Infineon Technologies AGMOSFET, N-CH, 150V, 37A, TO-220FP-3
RoHS: Compliant		0
  • 1:$7.0800
  • 10:$6.0200
  • 100:$5.2200
  • 250:$4.9600
  • 500:$4.4500
  • 1000:$3.7500
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Disponibilidad
Valores:
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En orden:
2477
Ingrese la cantidad:
El precio actual de IPA105N15N3GXKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
4,46 US$
4,46 US$
10
3,79 US$
37,90 US$
100
3,29 US$
329,00 US$
250
3,12 US$
780,00 US$
500
2,80 US$
1 400,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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