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FDG313N

FDG313N
Mfr. #:
FDG313N
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET SC70-6 N-CH 25V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDG313N Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SOT-323-6
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
25 V
Id - Corriente de drenaje continua:
950 mA
Rds On - Resistencia de la fuente de drenaje:
350 mOhms
Vgs - Voltaje puerta-fuente:
8 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
750 mW
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Altura:
1.1 mm
Longitud:
2 mm
Producto:
Pequeña señal MOSFET
Serie:
FDG313N
Tipo de transistor:
1 N-Channel
Escribe:
FET
Ancho:
1.25 mm
Marca:
ON Semiconductor / Fairchild
Transconductancia directa - Mín .:
1.5 S
Otoño:
8.5 ns
Tipo de producto:
MOSFET
Hora de levantarse:
8.5 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
17 ns
Tiempo típico de retardo de encendido:
3 ns
Parte # Alias:
FDG313N_NL
Unidad de peso:
0.000988 oz
Tags
FDG313, FDG31, FDG3, FDG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 25 V 450 mOhm Surface Mount Digital FET Mosfet - SC-70-6
*** Electronics
FAIRCHILD SEMICONDUCTOR FDG313N MOSFET Transistor, N Channel, 950 mA, 25 V, 450 mohm, 4.5 V, 800 mV
***ment14 APAC
MOSFET, N, SMD, 6-SC-70; Transistor Polarity:N Channel; Continuous Drain Current Id:950mA; Drain Source Voltage Vds:25V; On Resistance Rds(on):450mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:750mW; Transistor Case Style:SC-70; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:950mA; Package / Case:SC-70; Power Dissipation Pd:750mW; Termination Type:SMD; Voltage Vds Typ:25V; Voltage Vgs Max:800mV; Voltage Vgs Rds on Measurement:4.5V
***rchild Semiconductor
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistor and small signal MOSFET.
***ser
MOSFETs- Power and Small Signal 25V 1.2A N-Channel No-Cancel/No-Return
***ponent Stockers USA
1000 mA 25 V N-CHANNEL Si SMALL SIGNAL MOSFET
***r Electronics
Small Signal Field-Effect Transistor, 1A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***or
MOSFET N-CH 25V 1A SC88/SC70-6
***r Electronics
Small Signal Field-Effect Transistor, 1A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ser
MOSFETs- Power and Small Signal 25V 1.2A N-Channel
***or
MOSFET N-CH 25V 1A SC88/SC70-6
***emi
P-Channel PowerTrench® MOSFET, 2.5V Specified, -1.2 A, 180 mΩ
***ment14 APAC
MOSFET, P; Transistor Polarity:P Channel; Continuous Drain Current Id:1.2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):187mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:900mV; Power Dissipation Pd:750mW; Transistor Case Style:SC-70; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:1.2A; Package / Case:SC70; Power Dissipation Pd:750mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:-900mV; Voltage Vgs Rds on Measurement:8V
***rchild Semiconductor
This P-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.
***ark
MOSFET, N CH, 20V, 0.29OHM, 970mA, SOT-416-3; Transistor Polarity:N Channel; Con
***ure Electronics
N-Channel 20 V 350 mOhm 0.72 nC SMT TrenchMOS Low Level FET - SC-75
***ical
Trans MOSFET N-CH 20V 0.97A 3-Pin SC-75 T/R
***ponent Stockers USA
970 mA 20 V N-CHANNEL Si SMALL SIGNAL MOSFET
***peria
N-channel TrenchMOS extremely low level FET
***ure Electronics
Single N-Channel 20 V 0.25 Ohm 500 mW Silicon Surface Mount Mosfet - SOT-23
***ical
Trans MOSFET N-CH 20V 1.2A Automotive 3-Pin SC-59 T/R
***ser
Transistor - FET N-Channel 20V 1.2A
***des Inc SCT
N-Channel Mosfet, 20V VDS, 8±V VGS
***ark
Mosfet Bvdss: 8V~24V Sc59 T&r 3K
***(Formerly Allied Electronics)
N-Channel Enhancement Mode FET SC-59
***ment14 APAC
MOSFET, N CH, 20V, 1.2A, SC-59; Transistor Polarity:N Channel; Continuous Drain Current Id:1.2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.2V; Power Dissipation Pd:500mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SC-59; No. of Pins:3; Current Id Max:4A; Package / Case:SC-59; Power Dissipation Pd:500mW; Termination Type:SMD; Transistor Type:Enhancement; Voltage Vds Typ:20V; Voltage Vgs Max:8V; Voltage Vgs Rds on Measurement:4.5V
***el Electronic
DIODES INC. - DMN100-7-F - MOSFET Transistor, N Channel, 1.1 A, 30 V, 0.24 ohm, 10 V, 3 V
***nell
MOSFET, N CH, 30V, 1.1A, SC-59; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.1A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.24ohm; Rd; Available until stocks are exhausted Alternative available
***ark
MOSFET, N CHANNEL, 30V, 1.1A, SC-59; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:1.1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
Parte # Mfg. Descripción Valores Precio
FDG313N
DISTI # FDG313NFSTR-ND		ON SemiconductorMOSFET N-CH 25V 0.95A SC70-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    FDG313N
    DISTI # FDG313NFSCT-ND    		ON SemiconductorMOSFET N-CH 25V 0.95A SC70-6
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      FDG313N
      DISTI # FDG313NFSDKR-ND      		ON SemiconductorMOSFET N-CH 25V 0.95A SC70-6
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        FDG313N_D87Z
        DISTI # FDG313N_D87Z-ND        		ON SemiconductorMOSFET N-CH 25V 0.95A SC70-6
        RoHS: Compliant
        Min Qty: 10000
        Container: Tape & Reel (TR)        		Limited Supply - Call
          FDG313N
          DISTI # FDG313N          		ON SemiconductorTrans MOSFET N-CH 25V 0.95A 6-Pin SC-70 T/R - Bulk (Alt: FDG313N)
          RoHS: Compliant
          Min Qty: 1087
          Container: Bulk          		Americas - 0
          • 10870:$0.2829
          • 5435:$0.2909
          • 3261:$0.2939
          • 2174:$0.2979
          • 1087:$0.2999
          FDG313N
          DISTI # 512-FDG313N          		ON SemiconductorMOSFET SC70-6 N-CH 25V
          RoHS: Compliant          		0
            FDG313N_D87Z
            DISTI # 512-FDG313N_D87Z            		ON SemiconductorMOSFET SC70-6 N-CH 25V
            RoHS: Compliant            		0
              FDG313NFairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 0.95A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
              RoHS: Compliant              		1655418
              • 1000:$0.3000
              • 500:$0.3200
              • 100:$0.3300
              • 25:$0.3500
              • 1:$0.3700
              FDG313NFairchild Semiconductor Corporation950 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET3000
              • 1112:$0.1400
              • 223:$0.1800
              • 1:$0.4000
              FDG313N
              DISTI # 8063371P              		ON SemiconductorMOSFETFAIRCHILDFDG313N, RL260
              • 200:£0.1280
              FDG313NFairchild Semiconductor Corporation 5521
                FDG313NFairchild Semiconductor Corporation 5609
                  FDG313NFairchild Semiconductor Corporation 2617
                    FDG313N
                    DISTI # 1471044                    		ON SemiconductorMOSFET, N, SMD, 6-SC-70
                    RoHS: Compliant                    		1
                    • 500:£0.2010
                    • 250:£0.2200
                    • 100:£0.2390
                    • 10:£0.4130
                    • 1:£0.5120
                    FDG313N
                    DISTI # 1471044RL                    		ON SemiconductorMOSFET, N, SMD, 6-SC-70
                    RoHS: Compliant                    		0
                    • 1:$1.1100
                    FDG313N
                    DISTI # 1471044                    		ON SemiconductorMOSFET, N, SMD, 6-SC-70
                    RoHS: Compliant                    		0
                    • 1:$1.1100
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                    Disponibilidad
                    Valores:
                    Available
                    En orden:
                    1000
                    Ingrese la cantidad:
                    El precio actual de FDG313N es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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