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MTB2P50ET4G

MTB2P50ET4G
Mfr. #:
MTB2P50ET4G
Fabricante:
ON Semiconductor
Descripción:
P CHANNEL MOSFET, -500V, 2A, D2-PAK, Transistor Polarity:P Channel, Continuous Drain Current Id:2A, Drain Source Voltage Vds:-500V, On Resistance Rds(on):6ohm, Rds(on) Test Voltage Vgs:10V, Thre
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
MTB2P50ET4G Ficha de datos
Entrega:
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ECAD Model:
Atributo del producto
Valor de atributo
Tags
MTB2P50ET, MTB2P50E, MTB2P, MTB2, MTB
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
Power MOSFET -500V -2A 6 Ohm Single P-Channel D2PAK
***et
Trans MOSFET P-CH 500V 2A 3-Pin(2+Tab) D2PAK T/R
***ark
P Channel Mosfet, -500V, 2A, D2-Pak; Transistor Polarity:p Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:2A; On Resistance Rds(On):6Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***th Star Micro
P-Channel Enhancement-Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition this advanced MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage high speed switching applications in power supplies converters and PWM motor controls these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
Parte # Mfg. Descripción Valores Precio
MTB2P50ET4G
DISTI # 09R9555		ON SemiconductorP CHANNEL MOSFET, -500V, 2A, D2-PAK,Transistor Polarity:P Channel,Continuous Drain Current Id:2A,Drain Source Voltage Vds:-500V,On Resistance Rds(on):6ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,No. of Pins:3PinsRoHS Compliant: Yes0
    MTB2P50ET4G
    DISTI # 863-MTB2P50ET4G    		ON SemiconductorMOSFET PFET 500V 2A 6O
    RoHS: Compliant    		0
      Imagen Parte # Descripción
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      Mfr.#: MTB2P50

      OMO.#: OMO-MTB2P50-1190

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      Mfr.#: MTB2P50E

      OMO.#: OMO-MTB2P50E-1190

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      MTB2P50E T2P50E

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      OMO.#: OMO-MTB2P50E-T2P50E-1190

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      MTB2P50E/D

      Mfr.#: MTB2P50E/D

      OMO.#: OMO-MTB2P50E-D-1190

      		 Nuevo y original
      MTB2P50EG

      Mfr.#: MTB2P50EG

      OMO.#: OMO-MTB2P50EG-1190

      		 Nuevo y original
      MTB2P50EG /P50EG

      Mfr.#: MTB2P50EG /P50EG

      OMO.#: OMO-MTB2P50EG-P50EG-1190

      		 Nuevo y original
      MTB2P50ET4

      Mfr.#: MTB2P50ET4

      OMO.#: OMO-MTB2P50ET4-1190

      		 MOSFET Transistor, P-Channel, TO-263AB
      MTB2P50ET4G

      Mfr.#: MTB2P50ET4G

      OMO.#: OMO-MTB2P50ET4G-1190

      		 P CHANNEL MOSFET, -500V, 2A, D2-PAK, Transistor Polarity:P Channel, Continuous Drain Current Id:2A, Drain Source Voltage Vds:-500V, On Resistance Rds(on):6ohm, Rds(on) Test Voltage Vgs:10V, Thre
      Disponibilidad
      Valores:
      Available
      En orden:
      5500
      Ingrese la cantidad:
      El precio actual de MTB2P50ET4G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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