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TH58NVG3S0HBAI4

TH58NVG3S0HBAI4
Mfr. #:
TH58NVG3S0HBAI4
Fabricante:
Toshiba Memory
Descripción:
NAND Flash 3.3V 8Gb 24nm SLC NAND (EEPROM)
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
TH58NVG3S0HBAI4 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
TH58NVG3S0HBAI4 más información
Atributo del producto
Valor de atributo
Fabricante:
Toshiba
Categoria de producto:
NAND Flash
RoHS:
Y
Estilo de montaje:
SMD / SMT
Paquete / Caja:
FBGA-63
Tamaño de la memoria:
8 Gbit
Tipo de interfaz:
Parallel
Organización:
1 G x 8
Tipo de tiempo:
Sincrónico
Ancho del bus de datos:
8 bit
Voltaje de suministro - Min:
2.7 V
Voltaje de suministro - Máx:
3.6 V
Corriente de suministro - Máx .:
30 mA
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 85 C
Embalaje:
Bandeja
Tipo de memoria:
NAND
Producto:
NAND Flash
Velocidad:
25 ns
Marca:
Memoria Toshiba
Sensible a la humedad:
Yes
Tipo de producto:
NAND Flash
Cantidad de paquete de fábrica:
210
Subcategoría:
Memoria y almacenamiento de datos
Tags
TH58NVG3S0HB, TH58NVG3S0H, TH58NVG3S, TH58NVG3, TH58NVG, TH58NV, TH58N, TH58, TH5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
NAND Flash Serial 3.3V 8G-bit 1G x 8 63-Pin FBGA
***et
8G(4G x 2)bit, generation: 24nm, VCC=2.7 to 3.6V
***i-Key
8GB SLC NAND 24NM BGA 9X11 3.3V
TH58NVG Series 16GB CMOS NAND EEPROM
Toshiba TH58NVG Series 16GB CMOS Electrically Erasable and Programmable Read-Only Memory (NAND EEPROM) offers 3.3V and is organized as (4096+256) bytes x 64 pages x 8192 blocks. Program and read data is transferred between the register and the memory cell array in 4352-byte increments, granted through two 4352-byte static registers. I/O pins are utilized for both address and data input/output including command inputs through the TH58NVG Series serial type memory. Applications include image file memory for still cameras, solid-state file storage and voice recording.Learn More
Parte # Mfg. Descripción Valores Precio
TH58NVG3S0HBAI4
DISTI # TH58NVG3S0HBAI4-ND		Toshiba Semiconductor and Storage Products8GB SLC NAND 24NM BGA 9X11 3.3V
RoHS: Compliant
Min Qty: 210
Container: Tray		Temporarily Out of Stock
  • 210:$8.9725
TH58NVG3S0HBAI4
DISTI # TH58NVG3S0HBAI4		Toshiba America Electronic Components8G(4G x 2)bit, generation: 24nm, VCC=2.7 to 3.6V - Trays (Alt: TH58NVG3S0HBAI4)
RoHS: Compliant
Min Qty: 210
Container: Tray		Americas - 0
  • 210:$7.4900
  • 420:$7.3900
  • 840:$7.2900
  • 1260:$7.1900
  • 2100:$6.9900
TH58NVG3S0HBAI4
DISTI # 757-TH58NVG3S0HBAI4		Toshiba America Electronic ComponentsNAND Flash 3.3V 8Gb 24nm SLC NAND (EEPROM)
RoHS: Compliant		175
  • 1:$12.1300
  • 10:$10.9200
  • 25:$9.9500
  • 100:$8.9800
  • 250:$8.2500
  • 500:$7.5200
  • 1000:$6.5500
Imagen Parte # Descripción
AT24C04D-STUM-T

Mfr.#: AT24C04D-STUM-T

OMO.#: OMO-AT24C04D-STUM-T

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ISO7141CCDBQR

Mfr.#: ISO7141CCDBQR

OMO.#: OMO-ISO7141CCDBQR

 Digital Isolators Small-FP & Low-Pwr 3/1 Quad Ch Dig Iso
ISO1540DR

Mfr.#: ISO1540DR

OMO.#: OMO-ISO1540DR

 Digital Isolators Low-Power,Bidirec I2C Iso
BSC340N08NS3 G

Mfr.#: BSC340N08NS3 G

OMO.#: OMO-BSC340N08NS3-G

 MOSFET N-Ch 80V 23A TDSON-8 OptiMOS 3
RC0402FR-0710KL

Mfr.#: RC0402FR-0710KL

OMO.#: OMO-RC0402FR-0710KL

 Thick Film Resistors - SMD 10K OHM 1%
RC0603FR-071KL

Mfr.#: RC0603FR-071KL

OMO.#: OMO-RC0603FR-071KL

 Thick Film Resistors - SMD 1K OHM 1%
GRM31CR61E476ME44K

Mfr.#: GRM31CR61E476ME44K

OMO.#: OMO-GRM31CR61E476ME44K-MURATA-ELECTRONICS

 Multilayer Ceramic Capacitors MLCC - SMD/SMT
AT24C04D-STUM-T

Mfr.#: AT24C04D-STUM-T

OMO.#: OMO-AT24C04D-STUM-T-MICROCHIP-TECHNOLOGY

 EEPROM SEEPROM, 4K, I2C - 1.7-3.6V, 1MHz, Ind Tmp, 8-SOT23
DF3EA-2P-2V(51)

Mfr.#: DF3EA-2P-2V(51)

OMO.#: OMO-DF3EA-2P-2V-51--HIROSE

 Nuevo y original
CRCW04021K50FKEDC

Mfr.#: CRCW04021K50FKEDC

OMO.#: OMO-CRCW04021K50FKEDC-VISHAY-DALE

 D10/CRCW0402-C 100 1K5 1% ET7
Disponibilidad
Valores:
165
En orden:
2148
Ingrese la cantidad:
El precio actual de TH58NVG3S0HBAI4 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
8,60 US$
8,60 US$
10
7,92 US$
79,20 US$
25
7,75 US$
193,75 US$
50
7,72 US$
386,00 US$
100
6,93 US$
693,00 US$
250
6,72 US$
1 680,00 US$
500
6,39 US$
3 195,00 US$
1000
6,17 US$
6 170,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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