ZXMS6005N8Q-13

ZXMS6005N8Q-13
Mfr. #:
ZXMS6005N8Q-13
Fabricante:
Diodes Incorporated
Descripción:
MOSFET Low Side IntelliFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
ZXMS6005N8Q-13 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
ZXMS6005N8Q-13 más información
Atributo del producto
Valor de atributo
Fabricante:
Diodos incorporados
Categoria de producto:
MOSFET
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SO-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
60 V
Id - Corriente de drenaje continua:
2 A
Rds On - Resistencia de la fuente de drenaje:
150 mOhms
Vgs th - Voltaje umbral puerta-fuente:
700 mV
Vgs - Voltaje puerta-fuente:
5 V
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 125 C
Pd - Disipación de energía:
1.65 W
Configuración:
Único
Modo de canal:
Mejora
Calificación:
AEC-Q101
Nombre comercial:
IntelliFET
Embalaje:
Carrete
Serie:
ZXMS6005N8Q
Tipo de transistor:
1 N-Channel
Marca:
Diodos incorporados
Otoño:
19 us
Tipo de producto:
MOSFET
Hora de levantarse:
14 us
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
34 us
Tiempo típico de retardo de encendido:
5 us
Tags
ZXMS6005, ZXMS6, ZXMS, ZXM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***des Inc SCT
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET, 2A, 1.65W
***ical
Current Limit SW 1-IN 1-OUT 0V to 5.5V 2A Automotive 8-Pin SO T/R
***et
Low Side IntelliFET SO-8 T&R 2.5K
***i-Key
IC PWR DRIVER N-CHAN 1:1 8SOIC
ZXMS6005N8 IntelliFET Self-Protected MOSFET
Diodes Inc. ZXMS6005N8 IntelliFET Self-Protected MOSFET is designed as a low-side, N-Channel MOSFET with logic-level input. The design integrates overcurrent, over-temperature, overvoltage (active clamp), and ESD-protected logic level functionality. These features allow the MOSFET to provide immunity from radiated and conducted emissions in harsh environments. Designers can use the ZXMS6005N8 MOSFET as a general-purpose switch driven from 3.3V or 5V microcontrollers. The ZXMS6005N8 MOSFET offers 60V continuous drain source voltage, 200mΩ on-state resistance, 2.8A nominal load current, and 490mJ clamping energy. With its wide array of protection features, the ZXMS6005N8 IntelliFET is ideal for harsh environments where standard MOSFET may not be rugged enough.Learn More
Automotive MOSFETs
Diodes Incorporated Automotive MOSFETs meet the stringent requirements of the AEC-Q101 reliability standard of the Automotive Electronics Council. Products with a 'Q' suffix indicate that the product is Automotive grade. This means the device has passed the rigorous AEC-Q101 standard and is fully supported for Automotive applications. The MOSFETs support customers with the PPAP (Production Part Approval Process), and TS16949 approved manufacturing sites.
IntelliFET Self-Protected MOSFETs
Diodes Inc. IntelliFET Self-Protected MOSFETs integrate a power MOSFET with a complete array of protection circuits. These protections guard against ESD, over-current, over-voltage and over-temperature conditions. Intelligent MOSFETs sense potentially catastrophic conditions and protects themselves and the connected loads. These protection functions improve overall system reliability. Additional features like status flags provide diagnostic capabilities that aid isolation and rectification faults within a vehicle.
Imagen Parte # Descripción
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MOSFET 60V IntelliFET Over Current Ctrl
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Mfr.#: ZXMS6002G

OMO.#: OMO-ZXMS6002G-1190

Nuevo y original
ZXMS6002GQTA

Mfr.#: ZXMS6002GQTA

OMO.#: OMO-ZXMS6002GQTA-DIODES

60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
ZXMS6004FF

Mfr.#: ZXMS6004FF

OMO.#: OMO-ZXMS6004FF-1190

Nuevo y original
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Mfr.#: ZXMS6004FFQ

OMO.#: OMO-ZXMS6004FFQ-1190

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ZXMS6004SGTA

Mfr.#: ZXMS6004SGTA

OMO.#: OMO-ZXMS6004SGTA-DIODES

Power Switch Lo Side 0.7A Automotive 4-Pin(3+Tab) SOT-223 T/R
ZXMS6005DGQTA

Mfr.#: ZXMS6005DGQTA

OMO.#: OMO-ZXMS6005DGQTA-DIODES

60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET™ MOSFET
ZXMS6006DGTA

Mfr.#: ZXMS6006DGTA

OMO.#: OMO-ZXMS6006DGTA-DIODES

Trans MOSFET N-CH 60V Automotive 4-Pin(3+Tab) SOT-223 T/R
ZXMS6001N3TA

Mfr.#: ZXMS6001N3TA

OMO.#: OMO-ZXMS6001N3TA-DIODES

Power Switch ICs - Power Distribution 60V LO INPT CURR SELF PROT LO SD SWCH
Disponibilidad
Valores:
Available
En orden:
1985
Ingrese la cantidad:
El precio actual de ZXMS6005N8Q-13 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,89 US$
0,89 US$
10
0,74 US$
7,44 US$
100
0,48 US$
48,00 US$
1000
0,38 US$
384,00 US$
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