We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| FDD5N53TM_WS DISTI # FDD5N53TM_WS-ND | ON Semiconductor | MOSFET N-CH 530V 4A DPAK RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Limited Supply - Call | |
| FDD5N53TM_WS DISTI # 512-FDD5N53TM-WS | ON Semiconductor | MOSFET N-Ch RoHS: Compliant | 0 |
| Imagen | Parte # | Descripción |
|---|---|---|
|
Mfr.#: FDD5N50UTM-WS OMO.#: OMO-FDD5N50UTM-WS |
MOSFET UniFET 500V 3A |
|
Mfr.#: FDD5N50FTM_WS OMO.#: OMO-FDD5N50FTM-WS-126 |
IGBT Transistors MOSFET UniFET 500V 3.5A |
|
|
Mfr.#: FDD5N50FTM OMO.#: OMO-FDD5N50FTM-1190 |
Power Field-Effect Transistor, 3.5A I(D), 500V, 1.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
|
Mfr.#: FDD5N50FTM-WS |
MOSFET N-CH 500V 3.5A DPAK |
|
|
Mfr.#: FDD5N50NZFTM |
MOSFET N-CH 500V DPAK |
|
|
Mfr.#: FDD5N50TM OMO.#: OMO-FDD5N50TM-1190 |
Power Field-Effect Transistor, 4A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
|
|
Mfr.#: FDD5N50UTM OMO.#: OMO-FDD5N50UTM-1190 |
- Bulk (Alt: FDD5N50UTM) |
|
|
Mfr.#: FDD5N53TM OMO.#: OMO-FDD5N53TM-1190 |
Power Field-Effect Transistor, 4A I(D), 530V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
|
|
Mfr.#: FDD5N50TM-WS |
MOSFET N-CH 500V 4A DPAK |
|
|
Mfr.#: FDD5N50UTF_WS |
MOSFET N-CH 500V 3A DPAK |