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FDS5692Z

FDS5692Z
Mfr. #:
FDS5692Z
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 50V N-Ch UltraFET PowerTrench MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDS5692Z Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FDS5692Z DatasheetFDS5692Z Datasheet (P4-P6)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SO-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
50 V
Id - Corriente de drenaje continua:
5.8 A
Rds On - Resistencia de la fuente de drenaje:
20 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
2.5 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Altura:
1.75 mm
Longitud:
4.9 mm
Tipo de transistor:
1 N-Channel
Escribe:
MOSFET
Ancho:
3.9 mm
Marca:
ON Semiconductor / Fairchild
Otoño:
6 ns
Tipo de producto:
MOSFET
Hora de levantarse:
5 ns
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
27 ns
Tiempo típico de retardo de encendido:
9 ns
Unidad de peso:
0.006596 oz
Tags
FDS569, FDS56, FDS5, FDS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 50V 5.8A 8-Pin SOIC N T/R
***ser
MOSFETs 50V N-Ch UltraFET PowerTrench MOSFET
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50V,5.8A,24OHM NCH ULTRAFET TRENCH MOSFET
***inecomponents.com
This N-Channel UltraFET device has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
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***ark
Mosfet, Dual, N-Ch, 40V, 7A Rohs Compliant: Yes
***des Inc SCT
40V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
*** Stop Electro
Small Signal Field-Effect Transistor
***emi
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***ure Electronics
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***et Europe
Trans MOSFET N-CH 60V 7A 8-Pin SOIC N T/R
***nell
MOSFET, N-CH, 60V, 7A, SOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.022ohm; Rds(on; Available until stocks are exhausted Alternative available
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
***i-Key
MOSFET N/P-CH 40V 7.5A/6A 8SOIC
***ark
MOSFET, DUAL, NP, SO-8; Transistor type:Enhancement; Voltage, Vds typ:40V; Current, Id cont:7.5A; Resistance, Rds on:31mohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:4V; Case style:SOIC; Current, Id cont N RoHS Compliant: Yes
***nell
MOSFET, DUAL, NP, SO-8; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 7.5A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.031ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: 4V; Power Dis
***ponent Sense
Trans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO T/R - Cut TR (SOS) (Alt: SI7850DP-T1-E3/BKN)
*** Electronics
SI7850DP-T1-E3 ; ROHS ; V ISHAY/SILICONIX ; MOSFET N-CH 60V POWERPAK 8-SOIC
***ure Electronics
Single N-Channel 60 V 22 mOhms Surface Mount Power Mosfet - PowerPAK SO-8
***(Formerly Allied Electronics)
MOSFET, Power,N-Ch,VDSS 60V,RDS(ON) 0.018Ohm,ID 6.2A,PowerPAK SO-8,PD 1.8W,-55C
***ment14 APAC
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:10.3A; Drain Source Voltage Vds:60V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:1.8W; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:10.3A; Package / Case:SOIC PowerPAK; Power Dissipation Pd:1.8W; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V
***nell
MOSFET, N SO-8 REEL 3K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:60V; Current, Id Cont:6.2A; Resistance, Rds On:0.031ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:SOIC PowerPAK; Termination Type:SMD; Current, Idm Pulse:40A; External Depth:5.26mm; External Length / Height:1.2mm; N-channel Gate Charge:27nC; No. of Pins:8; Power Dissipation:1.8W; Power, Pd:1.8W; Power, Ptot:1.8W; Quantity, Reel:3000; Resistance, Rds on Max:0.022ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Thermal Resistance, Junction to Case A:3.3°C/W; Voltage, Vds Max:60V; Voltage, Vgs Max:20V; Voltage, Vgs th Min:1V; Width, External:6.2mm; Width, Tape:12mm
***ure Electronics
Single N-Channel 60 V 26 mOhm 21 nC HEXFET® Power Mosfet - SOIC-8
***S.I.T. Europe - USA - Asia
Small Signal Field-Effect Transistor, 7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.2A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.026ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipa
***emi
Dual N-Channel PowerTrench® MOSFET, Logic Level, 40V, 6A, 29mΩ
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:6A; On Resistance, Rds(on):0.029ohm; Rds(on) Test Voltage, Vgs:1.9V; Threshold Voltage, Vgs Typ:20V ;RoHS Compliant: Yes
***rchild Semiconductor
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
***trelec
Transistor Polarity = N-Channel / Configuration = Dual / Continuous Drain Current (Id) A = 6 / Drain-Source Voltage (Vds) V = 40 / ON Resistance (Rds(on)) mOhm = 36 / Gate-Source Voltage V = 20 / Fall Time ns = 6 / Rise Time ns = 10 / Turn-OFF Delay Time ns = 37 / Turn-ON Delay Time ns = 18 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOIC / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 900
Parte # Mfg. Descripción Valores Precio
FDS5692Z
DISTI # FDS5692ZTR-ND		ON SemiconductorMOSFET N-CH 50V 5.8A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    FDS5692Z
    DISTI # FDS5692ZCT-ND    		ON SemiconductorMOSFET N-CH 50V 5.8A 8-SOIC
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      FDS5692Z
      DISTI # FDS5692ZDKR-ND      		ON SemiconductorMOSFET N-CH 50V 5.8A 8-SOIC
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        FDS5692Z
        DISTI # FDS5692Z        		ON SemiconductorTrans MOSFET N-CH 50V 5.8A 8-Pin SOIC N T/R - Bulk (Alt: FDS5692Z)
        RoHS: Compliant
        Min Qty: 338
        Container: Bulk        		Americas - 0
        • 3380:$0.9129
        • 1690:$0.9359
        • 1014:$0.9479
        • 676:$0.9609
        • 338:$0.9669
        FDS5692Z
        DISTI # 512-FDS5692Z        		ON SemiconductorMOSFET 50V N-Ch UltraFET PowerTrench MOSFET
        RoHS: Compliant        		0
          FDS5692ZFairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 5.8A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
          RoHS: Compliant          		8231
          • 1000:$0.9700
          • 500:$1.0300
          • 100:$1.0700
          • 25:$1.1100
          • 1:$1.2000
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          		 MOSFET N-CH
          Disponibilidad
          Valores:
          Available
          En orden:
          1000
          Ingrese la cantidad:
          El precio actual de FDS5692Z es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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