TGF2956

TGF2956
Mfr. #:
TGF2956
Fabricante:
Qorvo
Descripción:
RF JFET Transistors DC-12GHz 55W 32V GaN P3dB @ 3GHz 47.6dBm
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
TGF2956 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
TGF2956 más información
Atributo del producto
Valor de atributo
Fabricante
TriQuint (Qorvo)
categoria de producto
Transistores - FET, MOSFET - Sencillo
embalaje
Gofre
Alias ​​de parte
1112248
Estilo de montaje
SMD / SMT
Rango de temperatura de funcionamiento
- 65 C to + 150 C
Paquete-Estuche
Die
Tecnología
GaN SiC
Configuración
Único
Tipo transistor
HEMT
Ganar
19.3 dB
Potencia de salida
47.6 dBm
Disipación de potencia Pd
53 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 65
Frecuencia de operación
15 GHz
Id-corriente-de-drenaje-continua
3.5 A
Vds-Drain-Source-Breakdown-Voltage
32 V
Polaridad del transistor
Canal N
Voltaje de puerta de drenaje máximo
100 V
Tags
TGF295, TGF29, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TGF GaN on SiC Transistors
Qorvo TGF GaN on SiC Transistors for the Satellite, P to P, and Military communications along with Marine radar and Test and instrumentation. These are small footprint (dies) that handle high power (7W to 70W) and high frequency, up to 14GHz.
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Parte # Mfg. Descripción Valores Precio
TGF2956
DISTI # 772-TGF2956
QorvoRF JFET Transistors DC-12GHz 55W 32V GaN P3dB @ 3GHz 47.6dBm
RoHS: Compliant
100
  • 50:$71.5800
  • 100:$63.2500
1112248
DISTI # TGF2956
QorvoRF POWER TRANSISTOR
RoHS: Compliant
0
  • 1:$8.3000
Imagen Parte # Descripción
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Mfr.#: TGF2978-SM

OMO.#: OMO-TGF2978-SM

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OMO.#: OMO-TGF2935

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Mfr.#: TGF2929-FS

OMO.#: OMO-TGF2929-FS

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Mfr.#: TGF35-07870787-039

OMO.#: OMO-TGF35-07870787-039

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Mfr.#: TGF2977-SM

OMO.#: OMO-TGF2977-SM-318

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Mfr.#: TGF2018

OMO.#: OMO-TGF2018-318

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TGF2965-SM

Mfr.#: TGF2965-SM

OMO.#: OMO-TGF2965-SM-318

RF JFET Transistors 30MHZ-3GHz 5W 50 Ohm Gain 18dB@2GHz 32V
TGF2961-SD T/R

Mfr.#: TGF2961-SD T/R

OMO.#: OMO-TGF2961-SD-T-R-1190

Nuevo y original
TGF

Mfr.#: TGF

OMO.#: OMO-TGF-725

Specialty Fuses BUSS HEAT LIMITER
Disponibilidad
Valores:
Available
En orden:
3500
Ingrese la cantidad:
El precio actual de TGF2956 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
94,88 US$
94,88 US$
10
90,13 US$
901,31 US$
100
85,39 US$
8 538,75 US$
500
80,64 US$
40 321,90 US$
1000
75,90 US$
75 900,00 US$
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