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IPW60R060P7XKSA1

IPW60R060P7XKSA1
Mfr. #:
IPW60R060P7XKSA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CH 600V 48A TO247-3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPW60R060P7XKSA1 Ficha de datos
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Más información:
IPW60R060P7XKSA1 más información
Atributo del producto
Valor de atributo
Tags
IPW60R06, IPW60R0, IPW60, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 60 mOhm 67 nC CoolMOS™ Power Mosfet - TO-247-3
***ical
Trans MOSFET N-CH 600V 48A 3-Pin(3+Tab) TO-247 Tube
***nell
MOSFET, N-CH, 600V, 48A, 164W, TO-247
***i-Key
MOSFET N-CH 600V 48A TO247-3
***ronik
N-CH 600V 48A 60mOhm TO-247
***et Europe
HIGH POWER_NEW
***ark
Mosfet, N-Ch, 600V, 48A, 164W, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.049Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ineon
The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
Parte # Mfg. Descripción Valores Precio
IPW60R060P7XKSA1
DISTI # V99:2348_18198051		Infineon Technologies AGHIGH POWER_NEW230
  • 500:$3.5620
  • 250:$4.4490
  • 100:$4.7360
  • 10:$5.3550
  • 1:$7.0191
IPW60R060P7XKSA1
DISTI # V36:1790_18198051		Infineon Technologies AGHIGH POWER_NEW0
  • 240000:$2.9010
  • 120000:$2.9050
  • 24000:$3.5960
  • 2400:$5.0200
  • 240:$5.2700
IPW60R060P7XKSA1
DISTI # IPW60R060P7XKSA1-ND		Infineon Technologies AGMOSFET N-CH 600V 48A TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 2640:$3.4773
  • 720:$4.3401
  • 240:$5.0983
  • 25:$5.8828
  • 10:$6.2230
  • 1:$6.9300
IPW60R060P7XKSA1
DISTI # 33725855		Infineon Technologies AGHIGH POWER_NEW230
  • 2:$7.0191
IPW60R060P7XKSA1
DISTI # SP001647042		Infineon Technologies AGHIGH POWER_NEW (Alt: SP001647042)
RoHS: Compliant
Min Qty: 1		Europe - 130
  • 1000:€2.6900
  • 500:€2.8900
  • 100:€2.9900
  • 50:€3.0900
  • 25:€3.2900
  • 10:€3.3900
  • 1:€3.6900
IPW60R060P7XKSA1
DISTI # IPW60R060P7XKSA1		Infineon Technologies AGHIGH POWER_NEW - Rail/Tube (Alt: IPW60R060P7XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 2400:$3.0900
  • 1440:$3.1900
  • 960:$3.2900
  • 480:$3.3900
  • 240:$3.4900
IPW60R060P7XKSA1
DISTI # 93AC7138		Infineon Technologies AGMOSFET, N-CH, 600V, 48A, 164W, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:48A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.049ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes0
  • 500:$4.1700
  • 250:$4.6500
  • 100:$4.9000
  • 50:$5.1500
  • 25:$5.4000
  • 10:$5.6600
  • 1:$6.6600
IPW60R060P7XKSA1
DISTI # 726-IPW60R060P7XKSA1		Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant		0
  • 1:$6.5900
  • 10:$5.6000
  • 100:$4.8500
  • 250:$4.6000
  • 500:$4.1300
IPW60R060P7XKSA1
DISTI # 2986486		Infineon Technologies AGMOSFET, N-CH, 600V, 48A, 164W, TO-247
RoHS: Compliant		228
  • 100:$6.1700
  • 10:$7.1200
  • 1:$9.2300
IPW60R060P7XKSA1
DISTI # 2986486		Infineon Technologies AGMOSFET, N-CH, 600V, 48A, 164W, TO-247408
  • 100:£4.4400
  • 10:£5.1200
  • 1:£6.6400
Imagen Parte # Descripción
IPW60R060P7XKSA1

Mfr.#: IPW60R060P7XKSA1

OMO.#: OMO-IPW60R060P7XKSA1

 MOSFET HIGH POWER_NEW
IPW60R060C7XKSA1

Mfr.#: IPW60R060C7XKSA1

OMO.#: OMO-IPW60R060C7XKSA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 600V 35A TO247
IPW60R060P7XKSA1

Mfr.#: IPW60R060P7XKSA1

OMO.#: OMO-IPW60R060P7XKSA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 600V 48A TO247-3
IPW60R060P7

Mfr.#: IPW60R060P7

OMO.#: OMO-IPW60R060P7-1190

 PG-TO247-3/600V, 60 MOHM (Alt: IPW60R060P7)
Disponibilidad
Valores:
Available
En orden:
1500
Ingrese la cantidad:
El precio actual de IPW60R060P7XKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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