SI1070X-T1-E3

SI1070X-T1-E3
Mfr. #:
SI1070X-T1-E3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET RECOMMENDED ALT 781-SI1070X-GE3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI1070X-T1-E3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI1070X-T1-E3 DatasheetSI1070X-T1-E3 Datasheet (P4-P6)SI1070X-T1-E3 Datasheet (P7-P8)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SC-89-6
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Altura:
0.6 mm
Longitud:
1.66 mm
Serie:
SI1
Ancho:
1.2 mm
Marca:
Vishay / Siliconix
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Parte # Alias:
SI1070X-E3
Unidad de peso:
0.001129 oz
Tags
SI1070, SI107, SI10, SI1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 30V 1.2A SOT563F
***ark
MOSFET, N, SC-89; Transistor type:MOSFET; Voltage, Vds typ:30V; Current, Id cont:1.2A; Resistance, Rds on:0.099R; Voltage, Vgs Rds on measurement:4.5V; Voltage, Vgs th typ:1.55V; Case style:SC-89-6; Base number:1070; Charge, gate RoHS Compliant: Yes
***nell
MOSFET, N, SC-89; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:1.2A; Resistance, Rds On:0.099ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:1.55V; Case Style:SC-89; Termination Type:SMD; Base Number:1070; Current, Idm Pulse:6A; N-channel Gate Charge:3.5nC; No. of Pins:6; Power Dissipation:0.236mW; Power, Pd:0.236W; Resistance, Rds on @ Vgs = 2.5V:0.14ohm; Resistance, Rds on @ Vgs = 4.5V:0.099ohm; Voltage, Rds Measurement:4.5V; Voltage, Vds Max:30V; Voltage, Vgs th Max:1.55V; Voltage, Vgs th Min:0.7V
Parte # Mfg. Descripción Valores Precio
SI1070X-T1-E3
DISTI # SI1070X-T1-E3TR-ND
Vishay SiliconixMOSFET N-CH 30V 1.2A SOT563F
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    SI1070X-T1-E3
    DISTI # SI1070X-T1-E3CT-ND
    Vishay SiliconixMOSFET N-CH 30V 1.2A SOT563F
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      SI1070X-T1-E3
      DISTI # SI1070X-T1-E3DKR-ND
      Vishay SiliconixMOSFET N-CH 30V 1.2A SOT563F
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        SI1070X-T1-E3Vishay Intertechnologies 3000
          Imagen Parte # Descripción
          SI1070X-T1-GE3

          Mfr.#: SI1070X-T1-GE3

          OMO.#: OMO-SI1070X-T1-GE3

          MOSFET 30V Vds 12V Vgs SC89-6
          SI1070X-T1-E3

          Mfr.#: SI1070X-T1-E3

          OMO.#: OMO-SI1070X-T1-E3

          MOSFET RECOMMENDED ALT 781-SI1070X-GE3
          SI1070X

          Mfr.#: SI1070X

          OMO.#: OMO-SI1070X-1190

          Nuevo y original
          SI1070X-T1-E3

          Mfr.#: SI1070X-T1-E3

          OMO.#: OMO-SI1070X-T1-E3-VISHAY

          MOSFET N-CH 30V 1.2A SOT563F
          SI1070X-T1-GE3

          Mfr.#: SI1070X-T1-GE3

          OMO.#: OMO-SI1070X-T1-GE3-VISHAY

          MOSFET N-CH 30V 1.2A SOT563F
          Disponibilidad
          Valores:
          Available
          En orden:
          3000
          Ingrese la cantidad:
          El precio actual de SI1070X-T1-E3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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