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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| BSP373L6327HTSA1 DISTI # BSP373L6327HTSA1TR-ND | Infineon Technologies AG | MOSFET N-CH 100V 1.7A SOT-223 RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSP373L6327HTSA1 DISTI # BSP373L6327HTSA1CT-ND | Infineon Technologies AG | MOSFET N-CH 100V 1.7A SOT-223 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| BSP373L6327HTSA1 DISTI # BSP373L6327HTSA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 100V 1.7A SOT-223 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| BSP373 L6327 DISTI # BSP373L6327 | Infineon Technologies AG | Trans MOSFET N-CH 100V 1.7A 4-Pin(3+Tab) SOT-223 T/R - Bulk (Alt: BSP373L6327) RoHS: Not Compliant Min Qty: 1316 Container: Bulk | Americas - 0 |
|
| BSP373L6327HTSA1 DISTI # BSP373L6327HTSA1 | Infineon Technologies AG | MOSFET N-CH 100V 1.7A SOT-223 - Bulk (Alt: BSP373L6327HTSA1) RoHS: Compliant Min Qty: 1191 Container: Bulk | Americas - 0 |
|
| BSP373L6327HTSA1 DISTI # 25M7808 | Infineon Technologies AG | MOSFET, N CHANNEL, 100V, 1.7A, SOT-223,Transistor Polarity:N Channel,Continuous Drain Current Id:1.7A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.16ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes | 0 | |
| BSP373 L6327 DISTI # 726-BSP373L6327 | Infineon Technologies AG | MOSFET N-Ch 100V 1.7A SOT-223-3 RoHS: Compliant | 0 | |
| BSP373L6327 | Infineon Technologies AG | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 24400 |
|
| BSP373L6327HTSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 5000 |
|
| BSP373L6327 | Infineon Technologies AG | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 535 | |
| BSP373L6327 | Infineon Technologies AG | 100V,1.7A,N channel Power MOSFET | 45 |
|
| Imagen | Parte # | Descripción |
|---|---|---|
|
Mfr.#: BSP373NH6327XTSA1 OMO.#: OMO-BSP373NH6327XTSA1 |
MOSFET N-Ch 100V 1.8A SOT-223-3 |
|
Mfr.#: BSP373 OMO.#: OMO-BSP373-1190 |
Nuevo y original |
|
|
Mfr.#: BSP373 , LP2985IM5-1.8 |
Nuevo y original |
|
|
Mfr.#: BSP373E6327 OMO.#: OMO-BSP373E6327-1190 |
- Bulk (Alt: BSP373E6327) |
|
|
Mfr.#: BSP373L6327 OMO.#: OMO-BSP373L6327-1190 |
Power Field-Effect Transistor, 1.7A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSP373N OMO.#: OMO-BSP373N-1190 |
Nuevo y original |
|
|
Mfr.#: BSP373N H6327 OMO.#: OMO-BSP373N-H6327-1190 |
Trans MOSFET N-CH 100V 1.8A T/R |
|
|
Mfr.#: BSP373NH6327 OMO.#: OMO-BSP373NH6327-1190 |
100V,1.8A,N-Ch Small-Signal MOSFET |
|
|
Mfr.#: BSP373NH6327S OMO.#: OMO-BSP373NH6327S-1190 |
Nuevo y original |
|
Mfr.#: BSP373NH6327XTSA1 |
MOSFET N-CH 100V 1.7A SOT-223 |