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SI7137DP-T1-GE3

SI7137DP-T1-GE3
Mfr. #:
SI7137DP-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET -20V Vds 12V Vgs PowerPAK SO-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI7137DP-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI7137DP-T1-GE3 DatasheetSI7137DP-T1-GE3 Datasheet (P4-P6)SI7137DP-T1-GE3 Datasheet (P7-P9)SI7137DP-T1-GE3 Datasheet (P10-P12)SI7137DP-T1-GE3 Datasheet (P13)
ECAD Model:
Más información:
SI7137DP-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
E
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PowerPAK-SO-8
Número de canales:
1 Channel
Polaridad del transistor:
P-Channel
Vds - Voltaje de ruptura de drenaje-fuente:
20 V
Id - Corriente de drenaje continua:
60 A
Rds On - Resistencia de la fuente de drenaje:
1.6 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1.4 V
Vgs - Voltaje puerta-fuente:
12 V
Qg - Carga de puerta:
585 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
104 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Serie:
SI7
Tipo de transistor:
1 P-Channel
Marca:
Vishay / Siliconix
Transconductancia directa - Mín .:
95 S
Otoño:
72 ns
Tipo de producto:
MOSFET
Hora de levantarse:
14 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
230 ns
Tiempo típico de retardo de encendido:
20 ns
Parte # Alias:
SI7137DP-GE3
Unidad de peso:
0.017870 oz
Tags
SI7137DP-T1, SI7137DP-T, SI7137DP, SI7137D, SI7137, SI713, SI71, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    T***n
    T***n
    LK

    wow.. it amazing product. spark gap about 2cm..!i use to make this,1* 400kv boost module 1* 18650 baterry 1* 18650 usb charging circuit1* led and 220ohm resister.2* screw nuts2* switches 1* 25cm long pvc pipe and end caps works pritty well. not deathly, but it hurts. try you guys..!!

    2019-01-15
    A***v
    A***v
    RU

    The parcel was a national team. It came all that ordered. Went almost a week for this minus star. I will check in the case i will add a review, or even with these details that is still a lottery.

    2019-05-13
***ure Electronics
Single P-Channel 200 V 1.95 mOhms Surface Mount Power Mosfet - PowerPAK SO-8
***ark
MOSFET Transistor; Transistor Polarity:P Channel; Continuous Drain Current Id:-60A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):2.5mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1.4V ;RoHS Compliant: Yes
***nell
MOSFET, P CH, -20V, -60A, POWERPAK SO; Transistor Polarity:P Channel; Continuous Drain Current Id:-60A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0016ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:-
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***ure Electronics
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***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:45.6A; On Resistance Rds(On):0.0013Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V Rohs Compliant: Yes
***ure Electronics
20V, 50A, 2.3mohm, TrenchFET® power MOSFET, N-Channel, PowerPAK SO-8
***ical
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***enic
20V 50A 2.3m´Î@10V15A 5.2W 1.5V@250Ã×A N Channel PowerPAK SO-8 MOSFETs ROHS
***ment14 APAC
MOSFET,N CH,DIODE,20V,50A,PPAKSO8; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:20V; On Resistance Rds(on):1900µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:35.4A; Power Dissipation Pd:5.2W; Voltage Vgs Max:12V
***hard Electronics
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***roFlash
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***nell
MOSFET, P-CH, -20V, PPAK-SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0025ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:39W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
***Yang
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***emi
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***nell
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***rchild Semiconductor
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***ure Electronics
Single N-Channel 20 V 3.5 mOhm 52 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
***ineon SCT
20V Single N-Channel HEXFET Power MOSFET in a PQFN 3.3 by 3.3 package, PG-TSDSON-8, RoHS
***(Formerly Allied Electronics)
MOSFET, 20V, 40A, 2.5 MOHM, 2.5V DRIVE CAPABLE, PQFN3.3X3.3
***Yang
Trans MOSFET N-CH 20V 26A 8-Pin PQFN EP T/R - Tape and Reel
***trelec
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***ark
MOSFET,N CH,DIODE,20V,26A,PQFN33; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; On State Resistance:0.002ohm; Rds(on) Test Voltage Vgs:4.5V; Voltage Vgs Max:12V; Operating Temperature Range:-55°C to +150°C; Transistor ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Low RDS(on); Low Thermal Resistance to PCB (less than 3.4C/W); Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side
***emi
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***r Electronics
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***rchild Semiconductor
This N-Channel SyncFET™ is produced using Fairchild Semiconductor's advanced PowerTrench® process. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.
TrenchFET® Gen III Power MOSFET
The Vishay Siliconix TrenchFET® Gen III Power MOSFET family offers the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The Vishay Siliconix TrenchFET Gen III Power MOSFET improves greatly on the performance of the closest competing devices. The lower on-resistance and gate charge of the TrenchFET® Gen III Power MOSFET translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology, which won the EN-Genius award for Best Improvement in Power Devices. Vishay Siliconix TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET® P-Channel MOSFETs
Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.
Parte # Mfg. Descripción Valores Precio
SI7137DP-T1-GE3
DISTI # V72:2272_09215622		Vishay IntertechnologiesTrans MOSFET P-CH 20V 42A 8-Pin PowerPAK SO T/R
RoHS: Compliant		1471
  • 1000:$1.1500
  • 500:$1.1905
  • 250:$1.3289
  • 100:$1.3320
  • 25:$1.6219
  • 10:$1.6276
  • 1:$1.8717
SI7137DP-T1-GE3
DISTI # SI7137DP-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 20V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		634In Stock
  • 1000:$1.2198
  • 500:$1.4722
  • 100:$1.8928
  • 10:$2.3560
  • 1:$2.6100
SI7137DP-T1-GE3
DISTI # SI7137DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CH 20V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		634In Stock
  • 1000:$1.2198
  • 500:$1.4722
  • 100:$1.8928
  • 10:$2.3560
  • 1:$2.6100
SI7137DP-T1-GE3
DISTI # SI7137DP-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 20V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$1.1026
SI7137DP-T1-GE3
DISTI # 27105003		Vishay IntertechnologiesTrans MOSFET P-CH 20V 42A 8-Pin PowerPAK SO T/R
RoHS: Compliant		1471
  • 1000:$1.1500
  • 500:$1.1905
  • 250:$1.3289
  • 100:$1.3320
  • 25:$1.6219
  • 10:$1.6276
  • 7:$1.8717
SI7137DP-T1-GE3
DISTI # SI7137DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 20V 42A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7137DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$1.2900
  • 6000:$1.1900
  • 12000:$1.1900
  • 18000:$1.1900
  • 30000:$1.0900
SI7137DP-T1-GE3
DISTI # 63R6005		Vishay IntertechnologiesTrans MOSFET P-CH 20V 42A 8-Pin PowerPAK SO T/R - Product that comes on tape, but is not reeled (Alt: 63R6005)
RoHS: Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1:$2.7700
  • 25:$2.3000
  • 50:$2.0500
  • 100:$1.7900
  • 250:$1.6800
  • 500:$1.5600
  • 1000:$1.5000
SI7137DP-T1-GE3Vishay IntertechnologiesSingle P-Channel 200 V 1.95 mOhms Surface Mount Power Mosfet - PowerPAK SO-8
RoHS: Compliant		9000Reel
  • 3000:$1.6500
SI7137DP-T1-GE3
DISTI # 781-SI7137DP-GE3		Vishay IntertechnologiesMOSFET -20V Vds 12V Vgs PowerPAK SO-8
RoHS: Compliant		28226
  • 1:$2.3100
  • 10:$1.9200
  • 100:$1.4900
  • 500:$1.3000
  • 1000:$1.2600
  • 3000:$1.2400
SI7137DP-T1-GE3
DISTI # 2335354		Vishay IntertechnologiesMOSFET, P CH, -20V, -60A, POWERPAK SO
RoHS: Compliant		5724
  • 1:£1.7700
  • 10:£1.4700
  • 100:£1.1500
  • 250:£1.0800
  • 500:£1.0100
SI7137DP-T1-GE3
DISTI # C1S804000723516		Vishay IntertechnologiesMOSFETs
RoHS: Compliant		1471
  • 250:$1.3258
  • 100:$1.3289
  • 25:$1.6162
  • 10:$1.6219
SI7137DP-T1-GE3
DISTI # 2335354		Vishay IntertechnologiesMOSFET, P CH, -20V, -60A, POWERPAK SO
RoHS: Compliant		4374
  • 1:$3.6600
  • 10:$3.0400
  • 100:$2.3700
  • 500:$2.0600
  • 1000:$1.9800
  • 3000:$1.9700
SI7137DP-T1-GE3
DISTI # XSFP00000063506		Vishay Siliconix 
RoHS: Compliant		10095
  • 3000:$3.3000
  • 10095:$3.0000
SI7137DP-T1-GE3Vishay IntertechnologiesMOSFET -20V Vds 12V Vgs PowerPAK SO-8
RoHS: Compliant		Americas - 9000
  • 3000:$0.9980
  • 6000:$0.9620
  • 12000:$0.9250
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 Nuevo y original
Disponibilidad
Valores:
34
En orden:
2017
Ingrese la cantidad:
El precio actual de SI7137DP-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
2,30 US$
2,30 US$
10
1,91 US$
19,10 US$
100
1,48 US$
148,00 US$
500
1,29 US$
645,00 US$
1000
1,07 US$
1 070,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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