BSC109N10NS3 G

BSC109N10NS3 G
Mfr. #:
BSC109N10NS3 G
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-Ch 100V 63A TDSON-8 OptiMOS 3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSC109N10NS3 G Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
BSC109N10NS3 G más información
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
OptiMOS 3
embalaje
Carrete
Alias ​​de parte
BSC109N10NS3GATMA1 BSC109N10NS3GXT SP000778132
Estilo de montaje
SMD / SMT
Nombre comercial
OptiMOS
Paquete-Estuche
TDSON-8
Tecnología
Si
Número de canales
1 Channel
Tipo transistor
1 N-Channel
Id-corriente-de-drenaje-continua
63 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Resistencia a la fuente de desagüe de Rds
10.9 mOhms
Polaridad del transistor
Canal N
Tags
BSC109, BSC10, BSC1, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
Parte # Mfg. Descripción Valores Precio
BSC109N10NS3GATMA1
DISTI # BSC109N10NS3GATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 100V 63A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
162In Stock
  • 1000:$0.6893
  • 500:$0.8731
  • 100:$1.1259
  • 10:$1.4250
  • 1:$1.6100
BSC109N10NS3GATMA1
DISTI # BSC109N10NS3GATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 100V 63A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
162In Stock
  • 1000:$0.6893
  • 500:$0.8731
  • 100:$1.1259
  • 10:$1.4250
  • 1:$1.6100
BSC109N10NS3GATMA1
DISTI # BSC109N10NS3GATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 100V 63A 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
On Order
  • 5000:$0.5934
BSC109N10NS3GXT
DISTI # BSC109N10NS3GATMA1
Infineon Technologies AGTrans MOSFET N-CH 100V 63A 8-Pin TDSON EP - Tape and Reel (Alt: BSC109N10NS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 5000
  • 5000:$0.4669
  • 10000:$0.4499
  • 20000:$0.4339
  • 30000:$0.4189
  • 50000:$0.4119
BSC109N10NS3G
DISTI # BSC109N10NS3 G
Infineon Technologies AGTrans MOSFET N-CH 100V 63A 8-Pin TDSON T/R (Alt: BSC109N10NS3 G)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel
Asia - 0
    BSC109N10NS3GATMA1
    DISTI # 47Y7998
    Infineon Technologies AGMOSFET Transistor, N Channel, 63 A, 100 V, 0.0098 ohm, 10 V, 2.7 V RoHS Compliant: Yes0
    • 1:$1.3400
    • 10:$1.1400
    • 25:$1.0500
    • 50:$0.9620
    • 100:$0.8730
    • 250:$0.8220
    • 500:$0.7710
    • 1000:$0.6090
    BSC109N10NS3 G
    DISTI # 726-BSC109N10NS3G
    Infineon Technologies AGMOSFET N-Ch 100V 63A TDSON-8 OptiMOS 3
    RoHS: Compliant
    30
    • 1:$1.3400
    • 10:$1.1400
    • 100:$0.8730
    • 500:$0.7710
    • 1000:$0.6090
    BSC109N10NS3 GInfineon Technologies AG 2128
    • 1001:$0.7000
    • 201:$0.8000
    • 1:$2.0000
    BSC109N10NS3GATMA1
    DISTI # 2443423
    Infineon Technologies AGMOSFET, N CH, 100V, 63A, TDSON-8
    RoHS: Compliant
    0
    • 1:$2.1300
    • 10:$1.8100
    • 100:$1.3900
    • 500:$1.2200
    • 1000:$0.9640
    • 5000:$0.8730
    BSC109N10NS3GInfineon Technologies AG100V,10.9m,63A,N-Channel Power MOSFET31
    • 1:$0.9400
    • 100:$0.7800
    • 500:$0.6900
    • 1000:$0.6700
    BSC109N10NS3GATMA1
    DISTI # 2443423
    Infineon Technologies AGMOSFET, N CH, 100V, 63A, TDSON-8
    RoHS: Compliant
    0
    • 5:£0.9820
    • 25:£0.8870
    • 100:£0.6790
    • 250:£0.6400
    • 500:£0.6000
    Imagen Parte # Descripción
    BSC109N10NS3 G

    Mfr.#: BSC109N10NS3 G

    OMO.#: OMO-BSC109N10NS3-G

    MOSFET N-Ch 100V 63A TDSON-8 OptiMOS 3
    BSC109N10NS3GXT

    Mfr.#: BSC109N10NS3GXT

    OMO.#: OMO-BSC109N10NS3GXT-1190

    Trans MOSFET N-CH 100V 63A 8-Pin TDSON EP - Tape and Reel (Alt: BSC109N10NS3GATMA1)
    BSC109N10NS3 G

    Mfr.#: BSC109N10NS3 G

    OMO.#: OMO-BSC109N10NS3-G-1190

    MOSFET N-Ch 100V 63A TDSON-8 OptiMOS 3
    BSC109N10NS3G

    Mfr.#: BSC109N10NS3G

    OMO.#: OMO-BSC109N10NS3G-1190

    Trans MOSFET N-CH 100V 63A 8-Pin TDSON T/R (Alt: BSC109N10NS3 G)
    BSC109N10NS3GATMA1

    Mfr.#: BSC109N10NS3GATMA1

    OMO.#: OMO-BSC109N10NS3GATMA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH 100V 63A 8TDSON
    Disponibilidad
    Valores:
    Available
    En orden:
    2000
    Ingrese la cantidad:
    El precio actual de BSC109N10NS3 G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,91 US$
    0,91 US$
    10
    0,87 US$
    8,68 US$
    100
    0,82 US$
    82,22 US$
    500
    0,78 US$
    388,25 US$
    1000
    0,73 US$
    730,80 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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