SI7900AEDN-T1-GE3

Mfr. #:: SI7900AEDN-T1-GE3
Fabricante:: Vishay
Descripción:: RF Bipolar Transistors MOSFET 20V 8.5A 3.1W 26mohm @ 4.5V
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: SI7900AEDN-T1-GE3 Ficha de datos
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Más información:: SI7900AEDN-T1-GE3 más información

Atributo del producto
Valor de atributo

Fabricante: VISHAY

categoria de producto: FET: matrices

Serie: TrincheraFETR

embalaje: Embalaje alternativo de Digi-ReelR

Alias de parte: SI7900AEDN-GE3

Estilo de montaje: SMD / SMT

Nombre comercial: TrenchFET / PowerPAK

Paquete-Estuche: PowerPAKR 1212-8 Dual

Tecnología: Si

Temperatura de funcionamiento: -55°C ~ 150°C (TJ)

Tipo de montaje: Montaje superficial

Número de canales: 2 Channel

Paquete de dispositivo de proveedor: PowerPAKR 1212-8 Dual

Configuración: Doble

Tipo FET: 2 N-Channel (Dual) Common Drain

Potencia máxima: 1.5W

Tipo transistor: 2 N-Channel

Drenaje-a-fuente-voltaje-Vdss: 20V

Entrada-Capacitancia-Ciss-Vds: -

Función FET: Puerta de nivel lógico

Corriente-Continuo-Drenaje-Id-25 ° C: 6A

Rds-On-Max-Id-Vgs: 26 mOhm @ 8.5A, 4.5V

Vgs-th-Max-Id: 900mV @ 250μA

Puerta-Carga-Qg-Vgs: 16nC @ 4.5V

Disipación de potencia Pd: 1.5 W

Temperatura máxima de funcionamiento: + 150 C

Temperatura mínima de funcionamiento: - 55 C

Otoño: 1300 ns

Hora de levantarse: 1300 ns

Vgs-Puerta-Fuente-Voltaje: 12 V

Id-corriente-de-drenaje-continua: 6 A

Vds-Drain-Source-Breakdown-Voltage: 20 V

Resistencia a la fuente de desagüe de Rds: 26 mOhms

Polaridad del transistor: Canal N

Tiempo de retardo de apagado típico: 8600 ns

Tiempo de retardo de encendido típico: 850 ns

Modo de canal: Mejora

Tags: SI7900AEDN-T1, SI7900AEDN-T, SI7900AE, SI7900A, SI7900, SI790, SI79, SI7

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI7900AEDN-T1-GE3 Descripción

***ied Electronics & Automation: SI7900AEDN-T1-GE3 Dual N-channel MOSFET Transistor; 6 A; 20V; 8-Pin PowerPAK 1212

***Components: In a Pack of 10, Dual N-Channel MOSFET, 6 A, 20 V, 8-Pin PowerPAK 1212 Vishay SI7900AEDN-T1-GE3

***ical: Trans MOSFET N-CH 20V 6A 8-Pin PowerPAK 1212 T/R

***i-Key: MOSFET 2N-CH 20V 6A PPAK 1212-8

SI7900AEDN-T1-GE3 Más información

Integrated MOSFETs with Common Drain: Vishay Integrated MOSFETs with Common Drain are 1, 2 and 3-channels offering surface mounting. The Integrated MOSFETs feature N-channel, and N+P-channel options, as well as a breakdown voltage range of 20V to 200V. The Enhancement Mode MOSFETs have 6 or 8-pins, a power dissipation range of 1.5W to 69.4W, and on drain-source resistance of 2.15mΩ to 26mΩ.

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Market price

Parte #	Mfg.	Descripción	Valores	Precio
SI7900AEDN-T1-GE3 DISTI # SI7900AEDN-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2N-CH 20V 6A PPAK 1212-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	6In Stock	1000:$0.5778 500:$0.7319 100:$0.9438 10:$1.1940 1:$1.3500
SI7900AEDN-T1-GE3 DISTI # SI7900AEDN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 6A PPAK 1212-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	6In Stock	1000:$0.5778 500:$0.7319 100:$0.9438 10:$1.1940 1:$1.3500
SI7900AEDN-T1-GE3 DISTI # SI7900AEDN-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 6A PPAK 1212-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$0.5236
SI7900AEDN-T1-GE3 DISTI # SI7900AEDN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 6A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7900AEDN-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.4939 6000:$0.4799 12000:$0.4599 18000:$0.4469 30000:$0.4349
SI7900AEDN-T1-GE3 DISTI # 70617004	Vishay Siliconix	MOSFET 2N-CH 20V 6A PPAK 1212-8 RoHS: Compliant	0	300:$0.8200 600:$0.7500 1500:$0.6900 3000:$0.6100
SI7900AEDN-T1-GE3 DISTI # 781-SI7900AEDN-GE3	Vishay Intertechnologies	MOSFET 20V Vds 12V Vgs PowerPAK 1212-8 RoHS: Compliant	2990	1:$1.1900 10:$0.9800 100:$0.7520 500:$0.6470 1000:$0.5100 3000:$0.4760
SI7900AEDN-T1-GE3	Vishay Intertechnologies		960

Productos relacionados

Imagen	Parte #	Descripción
	Mfr.#: SI7900AEDN-T1-E3 OMO.#: OMO-SI7900AEDN-T1-E3	MOSFET 20V Vds 12V Vgs PowerPAK 1212-8
	Mfr.#: SI7900AEDN-T1-GE3 OMO.#: OMO-SI7900AEDN-T1-GE3	MOSFET 20V Vds 12V Vgs PowerPAK 1212-8
	Mfr.#: SI7900AEDN-T1-E3 OMO.#: OMO-SI7900AEDN-T1-E3-VISHAY	RF Bipolar Transistors MOSFET 20V 8.5A 1.5W
	Mfr.#: SI7900AEDN-T1-GE3 OMO.#: OMO-SI7900AEDN-T1-GE3-VISHAY	RF Bipolar Transistors MOSFET 20V 8.5A 3.1W 26mohm @ 4.5V
	Mfr.#: SI7900AEDN OMO.#: OMO-SI7900AEDN-1190	Nuevo y original
	Mfr.#: SI7900AEDN-T OMO.#: OMO-SI7900AEDN-T-1190	Nuevo y original
	Mfr.#: SI7900AEDN-T1 OMO.#: OMO-SI7900AEDN-T1-1190	Nuevo y original
	Mfr.#: SI7900AEDN-T1-E3 GE3 OMO.#: OMO-SI7900AEDN-T1-E3-GE3-1190	Nuevo y original

Disponibilidad

Valores:: Available
En orden:: 3000
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El precio actual de SI7900AEDN-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,65 US$~~; ~~0,65 US$~~

10: ~~0,62 US$~~; ~~6,20 US$~~

100: ~~0,59 US$~~; ~~58,71 US$~~

500: ~~0,55 US$~~; ~~277,25 US$~~

1000: ~~0,52 US$~~; ~~521,90 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

Empezar con

SI7900AEDN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes