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IRGB4059DPBF

IRGB4059DPBF
Mfr. #:
IRGB4059DPBF
Fabricante:
Infineon Technologies
Descripción:
IGBT Transistors 600V UltraFast Trench IGBT
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRGB4059DPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRGB4059DPBF DatasheetIRGB4059DPBF Datasheet (P4-P6)IRGB4059DPBF Datasheet (P7-P9)IRGB4059DPBF Datasheet (P10-P11)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
IGBTs - Single
Serie
-
embalaje
Tubo
Unidad de peso
0.211644 oz
Estilo de montaje
A través del orificio
Paquete-Estuche
TO-220-3
Tipo de entrada
Estándar
Tipo de montaje
A través del orificio
Paquete de dispositivo de proveedor
TO-220AB
Configuración
Único
Potencia máxima
56W
Tiempo de recuperación inverso trr
55ns
Colector-corriente-Ic-Max
8A
Voltaje-Colector-Emisor-Ruptura-Máx.
600V
Tipo IGBT
Zanja
Colector de corriente pulsado Icm
16A
Vce-en-Max-Vge-Ic
2.05V @ 15V, 4A
Energía de conmutación
35μJ (on), 75μJ (off)
Gate-Charge
9nC
Td-encendido-apagado-25 ° C
25ns/65ns
Condición de prueba
400V, 4A, 100 Ohm, 15V
Disipación de potencia Pd
56 W
Temperatura máxima de funcionamiento
+ 175 C
Temperatura mínima de funcionamiento
- 55 C
Colector-Emisor-Voltaje-VCEO-Max
600 V
Colector-Emisor-Saturación-Voltaje
2.05 V
Corriente-de-colector-continuo-a-25-C
8 A
Voltaje máximo del emisor de puerta
+/- 20 V
Colector-continuo-Corriente-Ic-Max
8 A
Tags
IRGB4059, IRGB405, IRGB40, IRGB4, IRGB, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 8A 56000mW 3-Pin(3+Tab) TO-220AB Tube
***ernational Rectifier
600V UltraFast Copack Trench IGBT in a TO-220AB package
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
SINGLE IGBT, 600V; Transistor Type: IGBT; DC Collector Current: 8A; Collector Emitter Voltage Vces: 600V; Power Dissipation Pd: 56W; Collector Emitter Voltage V(br)ceo: 600V; No. of Pins: 3; C-E Breakdown Voltage: 2.2V
*** Electronic Components
Motor / Motion / Ignition Controllers & Drivers Dis Short Circuit Rated IGBT
***Yang
IGBT 600V 8A 60W TO220 - Bulk
***th Star Micro
IGBT W/DIODE 600V 5A
***el Electronic
RES SMD 332 OHM 1% 1/16W 0402
***i-Key Marketplace
N-CHANNEL IGBT
***et
IGBT 600V 8A 35W TO220F
***i-Key
IGBT SHORT CIRC 600V 5A TO-220F
***i-Key Marketplace
IGBT, 8A, 600V, N-CHANNEL
***el Electronic
RES 4.7K OHM 1% 1/16W 0402
***ser
IGBTs 600V/5A/w/FRD
***ical
Trans IGBT Chip N-CH 600V 9A 25000mW 3-Pin(3+Tab) TO-220FP Tube
***ure Electronics
STGF10NC60KD Series 600 V 9 A N-Channel Power Mesh IGBT - TO-220FP
***el Electronic
In a Pack of 10, STMicroelectronics STGF10NC60KD IGBT, 9 A 600 V, 3-Pin TO-220FP
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***(Formerly Allied Electronics)
STGF10NC60KD,IGBT N-ch 600V 10A TO220FP
***ark
IGBT, 600V, 9A, 150DEG C, 25W; Continuous Collector Current:9A; Collector Emitter Saturation Voltage:2.5V; Power Dissipation:25W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-RoHS Compliant: Yes
***ical
Trans IGBT Chip N-CH 600V 6A 25000mW 3-Pin(3+Tab) TO-220FP Tube
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, TO-220FP; DC Collector Current: 6A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 20W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating
*** Electronic Components
Motor / Motion / Ignition Controllers & Drivers Dis High Perf IGBT
***Yang
IGBT 600V 6A 30W TO220 - Bulk
***inecomponents.com
Discrete, High Performance IGBT with Diode
***ser
IGBTs Dis,High Perf IGBT
***i-Key Marketplace
N-CHANNEL IGBT
***p One Stop Global
Trans IGBT Chip N-CH 600V 10A 3-Pin(3+Tab) TO-220FP Tube
***r Electronics
Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***icroelectronics
10 A, 600 V, fast IGBT with Ultrafast diode
Parte # Mfg. Descripción Valores Precio
IRGB4059DPBF
DISTI # 19273322		Infineon Technologies AGTrans IGBT Chip N-CH 600V 8A 56000mW 3-Pin(3+Tab) TO-220AB Tube167
  • 42:$1.5000
IRGB4059DPBF
DISTI # IRGB4059DPBF-ND		Infineon Technologies AGIGBT 600V 8A 56W TO220AB
RoHS: Compliant
Min Qty: 250
Container: Tube		Limited Supply - Call
    IRGB4059DPBF
    DISTI # IRGB4059DPBF    		Infineon Technologies AGTrans IGBT Chip N-CH 600V 8A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: IRGB4059DPBF)
    Min Qty: 288
    Container: Bulk    		Americas - 0
    • 864:$1.0900
    • 1440:$1.0900
    • 2880:$1.0900
    • 288:$1.1900
    • 576:$1.1900
    IRGB4059DPBF
    DISTI # 88K4671    		Infineon Technologies AGTrans IGBT Chip N-CH 600V 8A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: 88K4671)
    RoHS: Compliant
    Min Qty: 1
    Container: Bulk    		Americas - 0
      IRGB4059DPBF
      DISTI # 88K4671      		Infineon Technologies AGSINGLE IGBT, 600V,DC Collector Current:8A,Collector Emitter Saturation Voltage Vce(on):1.75V,Power Dissipation Pd:56W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:175°C,MSL:- RoHS Compliant: Yes167
      • 1:$1.2000
      • 10:$1.2000
      • 25:$1.2000
      • 50:$1.2000
      • 100:$1.2000
      • 250:$1.2000
      • 500:$1.2000
      IRGB4059DPBF
      DISTI # 942-IRGB4059DPBF      		Infineon Technologies AGIGBT Transistors 600V UltraFast Trench IGBT
      RoHS: Compliant      		0
        IRGB4059DPBFInfineon Technologies AGInsulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220AB
        RoHS: Compliant        		420
        • 1000:$1.1500
        • 500:$1.2100
        • 100:$1.2600
        • 25:$1.3100
        • 1:$1.4100
        IRGB4059DPBFInternational RectifierInsulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220AB
        RoHS: Compliant        		600
        • 1000:$1.1500
        • 500:$1.2100
        • 100:$1.2600
        • 25:$1.3100
        • 1:$1.4100
        IRGB4059DPBFInternational Rectifier 236
          IRGB4059DPBFInternational Rectifier*** FREE SHIPPING ORDERS OVER $100 ***363
          • 196:$1.4208
          • 90:$1.5360
          • 1:$3.0720
          IRGB4059DPBF.
          DISTI # 2133356          		Infineon Technologies AGSINGLE IGBT, 600V
          RoHS: Compliant          		167
          • 1:$3.1400
          IRGB4059DPBF.
          DISTI # 2133356          		Infineon Technologies AGSINGLE IGBT, 600V
          RoHS: Compliant          		167
          • 100:£1.5300
          • 50:£1.7700
          • 25:£1.8900
          • 10:£2.1600
          • 1:£2.4800
          IRGB4059DPBFInternational Rectifier 
          RoHS: Compliant          		Europe - 250
            Imagen Parte # Descripción
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            Disponibilidad
            Valores:
            Available
            En orden:
            3500
            Ingrese la cantidad:
            El precio actual de IRGB4059DPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
            Precio de referencia (USD)
            Cantidad
            Precio unitario
            Ext. Precio
            1
            1,64 US$
            1,64 US$
            10
            1,55 US$
            15,53 US$
            100
            1,47 US$
            147,15 US$
            500
            1,39 US$
            694,90 US$
            1000
            1,31 US$
            1 308,00 US$
            Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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