We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
Parte # | Mfg. | Descripción | Valores | Precio |
---|---|---|---|---|
SI4286DY-T1-GE3 DISTI # V72:2272_09215546 | Vishay Intertechnologies | Trans MOSFET N-CH 40V 5.7A 8-Pin SOIC N RoHS: Compliant | 825 |
|
SI4286DY-T1-GE3 DISTI # SI4286DY-T1-GE3CT-ND | Vishay Siliconix | MOSFET 2N-CH 40V 7A 8SO Min Qty: 1 Container: Cut Tape (CT) | 4506In Stock |
|
SI4286DY-T1-GE3 DISTI # SI4286DY-T1-GE3DKR-ND | Vishay Siliconix | MOSFET 2N-CH 40V 7A 8SO Min Qty: 1 Container: Digi-Reel® | 4506In Stock |
|
SI4286DY-T1-GE3 DISTI # SI4286DY-T1-GE3TR-ND | Vishay Siliconix | MOSFET 2N-CH 40V 7A 8SO Min Qty: 2500 Container: Tape & Reel (TR) | 2500In Stock |
|
SI4286DY-T1-GE3 DISTI # 33092553 | Vishay Intertechnologies | Trans MOSFET N-CH 40V 5.7A 8-Pin SOIC N RoHS: Compliant | 1728 |
|
SI4286DY-T1-GE3 DISTI # 30276089 | Vishay Intertechnologies | Trans MOSFET N-CH 40V 5.7A 8-Pin SOIC N RoHS: Compliant | 825 |
|
SI4286DY-T1-GE3. DISTI # 26AC3328 | Vishay Intertechnologies | Transistor Polarity:Dual N Channel,Continuous Drain Current Id:7A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.027ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Power Dissipation Pd:2.9W,No. of Pins:8Pins RoHS Compliant: Yes RoHS: Compliant | 0 | |
SI4286DY-T1-GE3 DISTI # 70616175 | Vishay Siliconix | SI4286DY-T1-GE3 Dual N-channel MOSFET Transistor,7 A,40 V,8-Pin SOIC RoHS: Not Compliant | 0 |
|
SI4286DY-T1-GE3 DISTI # 78-SI4286DY-T1-GE3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 78-SI4288DY-T1-GE3 RoHS: Compliant | 3867 |
|
SI4286DY-T1-GE3 DISTI # 1657251 | Vishay Intertechnologies | On a Reel of 2500, Dual N-Channel MOSFET, 7 A, 40 V, 8-Pin SOIC Vishay SI4286DY-T1-GE3, RL Min Qty: 2500 Container: Reel | 0 |
|
SI4286DY-T1-GE3 DISTI # 2679693 | Vishay Intertechnologies | MOSFET, DUAL N-CH, 40V, 7A, SOIC RoHS: Compliant | 0 |
|
SI4286DY-T1-GE3 DISTI # 2646383 | Vishay Intertechnologies | MOSFET, DUAL N-CH, 40V, 7A, SOIC RoHS: Compliant | 8576 |
|
SI4286DY-T1-GE3 DISTI # 2679693 | Vishay Intertechnologies | MOSFET, DUAL N-CH, 40V, 7A, SOIC RoHS: Compliant | 0 |
|
SI4286DY-T1-GE3 DISTI # 2646383RL | Vishay Intertechnologies | MOSFET, DUAL N-CH, 40V, 7A, SOIC RoHS: Compliant | 0 |
|
SI4286DY-T1-GE3 DISTI # 2646383 | Vishay Intertechnologies | MOSFET, DUAL N-CH, 40V, 7A, SOIC RoHS: Compliant | 8576 |
|
Imagen | Parte # | Descripción |
---|---|---|
Mfr.#: SI4210-E-KT-EVB OMO.#: OMO-SI4210-E-KT-EVB |
RF Development Tools | |
Mfr.#: SI4212-RRDA-EVB OMO.#: OMO-SI4212-RRDA-EVB |
RF Development Tools | |
Mfr.#: SI4200-BM OMO.#: OMO-SI4200-BM-SILICON-LABS |
IC RF TXRX CELLULAR 32VFQFN | |
Mfr.#: SI4202DY-T1-E3 OMO.#: OMO-SI4202DY-T1-E3-1190 |
Nuevo y original | |
Mfr.#: SI4209-B-GM OMO.#: OMO-SI4209-B-GM-1190 |
Nuevo y original | |
Mfr.#: SI4210GM OMO.#: OMO-SI4210GM-1190 |
Nuevo y original | |
Mfr.#: SI4228 OMO.#: OMO-SI4228-1190 |
Nuevo y original | |
Mfr.#: SI4262DY OMO.#: OMO-SI4262DY-1190 |
Nuevo y original | |
Mfr.#: SI4286DY-T1-GE3 OMO.#: OMO-SI4286DY-T1-GE3-VISHAY |
MOSFET 2N-CH 40V 7A 8SO | |
Mfr.#: SI4205-EVB+F19 |
Nuevo y original |