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SCT30N120

SCT30N120
Mfr. #:
SCT30N120
Fabricante:
STMicroelectronics
Descripción:
MOSFET 1200V silicon carbide MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SCT30N120 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
SCT30N120 más información SCT30N120 Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Sic
Estilo de montaje:
A través del orificio
Paquete / Caja:
HiP-247-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
1.2 kV
Id - Corriente de drenaje continua:
45 A
Rds On - Resistencia de la fuente de drenaje:
80 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2.6 V
Vgs - Voltaje puerta-fuente:
25 V, - 10 V
Qg - Carga de puerta:
105 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 200 C
Pd - Disipación de energía:
270 W
Configuración:
Único
Nombre comercial:
HiP247â?¢
Embalaje:
Tubo
Serie:
SCT30N120
Tipo de transistor:
1 N-Channel
Marca:
STMicroelectronics
Otoño:
28 ns
Tipo de producto:
MOSFET
Hora de levantarse:
20 ns
Cantidad de paquete de fábrica:
600
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
45 ns
Tiempo típico de retardo de encendido:
19 ns
Unidad de peso:
1.340411 oz
Tags
SCT30N, SCT30, SCT3, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 package
***ure Electronics
Single N-Channel 1200 V 270 W 105 nC SiC Through Hole Mosfet - HiP247
***ark
Mosfet, N Ch, 1.2Kv, 40A, Hip247-3; Mosfet Configuration:single; Transistor Polarity:n Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:1.2Kv; On Resistance Rds(On):0.08Ohm; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes
SCT30N120 Silicon Carbide Power MOSFET
STMicroelectronics SCT30N120 Silicon Carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device's housing in the proprietary HiP247™ package, allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
Silicon Carbide Power MOSFETs
STMicroelectronics (SiC) MOSFETs feature very low RDS(on) area for the 1200V rating combined with excellent switching performance, translating into more efficient and compact systems. They have increased switching efficiency and operating frequency with the lowest Eoff vs. standard silicon technologies. A reduced form factor is possible thanks to the intrinsic body diode. Higher system efficiency and reliability are due to the maximum junction temperature at 200ºC.
Parte # Mfg. Descripción Valores Precio
SCT30N120
DISTI # 32450096		STMicroelectronicsTrans MOSFET N-CH SiC 1.2KV 45A 3-Pin HIP-247 Tube
RoHS: Compliant		780
  • 250:$27.0900
  • 100:$27.4860
  • 50:$27.9270
  • 30:$28.6830
SCT30N120
DISTI # 497-14960-ND		STMicroelectronicsMOSFET N-CH 1200V 45A HIP247
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 120:$25.8818
  • 30:$28.6340
  • 1:$32.1500
SCT30N120
DISTI # V99:2348_17706747		STMicroelectronicsTrans MOSFET N-CH SiC 1.2KV 45A 3-Pin HIP-247 Tube
RoHS: Compliant		0
    SCT30N120
    DISTI # V36:1790_06556385    		STMicroelectronicsTrans MOSFET N-CH SiC 1.2KV 45A 3-Pin HIP-247 Tube
    RoHS: Compliant    		0
      SCT30N120D2
      DISTI # V36:1790_17718182      		STMicroelectronicsSCT30N120D20
        SCT30N120
        DISTI # SCT30N120        		STMicroelectronicsTrans MOSFET N-CH 1200V 45A 3-Pin HiP247 Tube (Alt: SCT30N120)
        RoHS: Compliant
        Min Qty: 1
        Container: Tube        		Europe - 0
        • 1:€36.3900
        • 5:€30.1500
        • 10:€27.0300
        • 50:€24.9500
        • 100:€23.2900
        SCT30N120
        DISTI # SCT30N120        		STMicroelectronicsTrans MOSFET N-CH 1200V 45A 3-Pin HiP247 Tube (Alt: SCT30N120)
        RoHS: Compliant
        Min Qty: 600
        Container: Tube        		Asia - 0
        • 600:$19.6667
        • 1200:$18.7302
        • 1800:$17.8788
        • 3000:$17.1014
        • 6000:$16.3889
        • 15000:$15.9459
        • 30000:$15.5263
        SCT30N120D2
        DISTI # SCT30N120D2        		STMicroelectronicsSTMSCT30N120D2 (Alt: SCT30N120D2)
        RoHS: Compliant
        Min Qty: 1        		Europe - 0
        • 1:€19.1900
        • 10:€17.6900
        • 25:€16.7900
        • 50:€16.2900
        • 100:€16.1900
        • 500:€15.9900
        • 1000:€15.7900
        SCT30N120
        DISTI # 94X2608        		STMicroelectronicsMOSFET, N CH, 1.2KV, 40A, HIP247-3,Transistor Polarity:N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:1.2kV,On Resistance Rds(on):0.08ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:2.6V RoHS Compliant: Yes0
        • 250:$29.0400
        • 100:$29.4700
        • 50:$29.9500
        • 25:$30.7600
        • 10:$31.6600
        • 5:$32.6700
        • 1:$33.7200
        SCT30N120D2
        DISTI # 65AC6290        		STMicroelectronicsPTD WBG & POWER RF0
        • 1:$14.7500
        SCT30N120H
        DISTI # 59AC7247        		STMicroelectronicsPTD WBG & POWER RF0
        • 1:$14.7500
        SCT30N120STMicroelectronicsSingle N-Channel 1200 V 270 W 105 nC SiC Through Hole Mosfet - HiP247
        RoHS: Compliant        		1114Tube
        • 1:$25.4800
        • 5:$23.9200
        • 25:$22.4500
        SCT30N120
        DISTI # 511-SCT30N120        		STMicroelectronicsMOSFET 1200V silicon carbide MOSFET
        RoHS: Compliant        		0
        • 1:$26.8200
        • 5:$26.5400
        • 10:$24.7400
        • 25:$23.6300
        • 100:$21.1200
        • 250:$20.1500
        SCT30N120D2
        DISTI # 511-SCT30N120D2        		STMicroelectronicsMOSFET0
        • 490:$17.1100
        SCT30N120H
        DISTI # 511-SCT30N120H        		STMicroelectronicsMOSFET0
        • 1000:$14.1700
        SCT30N120
        DISTI # TMOSP11114        		STMicroelectronicsSiC-N 1200V 45A 80mOhm HiP247-3Stock DE - 0Stock HK - 0Stock US - 0
        • 600:$34.5300
        SCT30N120H
        DISTI # TMOS2202        		STMicroelectronicsSiC-N 1200V 45A 80mOhm H2PAK-2Stock DE - 0Stock HK - 0Stock US - 0
        • 1000:$18.8700
        SCT30N120
        DISTI # 2451116        		STMicroelectronicsMOSFET, N CH, 1.2KV, 40A, HIP247-3
        RoHS: Compliant        		0
        • 100:£20.4000
        • 50:£20.6200
        • 10:£20.8500
        • 5:£21.0700
        • 1:£21.2900
        SCT30N120
        DISTI # XSFP00000005955        		STMicroelectronicsPower Field-EffectTransistor,N-Channel,Metal-oxideSemiconductor FET
        RoHS: Compliant        		1802 in Stock0 on Order
        • 1802:$46.3300
        • 30:$50.9600
        SCT30N120
        DISTI # 2451116        		STMicroelectronicsMOSFET, N CH, 1.2KV, 40A, HIP247-3
        RoHS: Compliant        		0
        • 10:$37.2800
        • 5:$40.0000
        • 1:$40.4200
        Imagen Parte # Descripción
        SCT3030KLHRC11

        Mfr.#: SCT3030KLHRC11

        OMO.#: OMO-SCT3030KLHRC11

        		 MOSFET 1200V 72A 339W SIC 30mOhm TO-247N
        SCT3022ALHRC11

        Mfr.#: SCT3022ALHRC11

        OMO.#: OMO-SCT3022ALHRC11

        		 MOSFET 650V 93A 339W SIC 22mOhm TO-247N
        SCT3060ALHRC11

        Mfr.#: SCT3060ALHRC11

        OMO.#: OMO-SCT3060ALHRC11

        		 MOSFET 650V 39A 165W SIC 60mOhm TO-247N
        SCT3160KLHRC11

        Mfr.#: SCT3160KLHRC11

        OMO.#: OMO-SCT3160KLHRC11

        		 MOSFET 1200V 17A 103W SIC 160mOhm TO-247N
        SCT30N120H

        Mfr.#: SCT30N120H

        OMO.#: OMO-SCT30N120H

        		 MOSFET
        SCT3030KLGC11

        Mfr.#: SCT3030KLGC11

        OMO.#: OMO-SCT3030KLGC11

        		 MOSFET N-Ch 1200V SiC 72A 30mOhm TrenchMOS
        SCT3160KL

        Mfr.#: SCT3160KL

        OMO.#: OMO-SCT3160KL-1190

        		 Nuevo y original
        SCT3604

        Mfr.#: SCT3604

        OMO.#: OMO-SCT3604-1190

        		 Nuevo y original
        SCT36XR31LU

        Mfr.#: SCT36XR31LU

        OMO.#: OMO-SCT36XR31LU-1190

        		 Nuevo y original
        SCT3040KLHRC11

        Mfr.#: SCT3040KLHRC11

        OMO.#: OMO-SCT3040KLHRC11-ROHM-SEMI

        		 AUTOMOTIVE GRADE N-CHANNEL SIC P
        Disponibilidad
        Valores:
        Available
        En orden:
        1000
        Ingrese la cantidad:
        El precio actual de SCT30N120 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        26,82 US$
        26,82 US$
        5
        26,54 US$
        132,70 US$
        10
        24,74 US$
        247,40 US$
        25
        23,63 US$
        590,75 US$
        100
        21,12 US$
        2 112,00 US$
        250
        20,15 US$
        5 037,50 US$
        500
        19,18 US$
        9 590,00 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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