OMO ElectronicOMO Electronic
Expand menu
Hola, regístrateMi cuenta
0 Carro

SI4483ADY-T1-GE3

SI4483ADY-T1-GE3
Mfr. #:
SI4483ADY-T1-GE3
Fabricante:
Vishay
Descripción:
MOSFET P-CH 30V 19.2A 8-SOIC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI4483ADY-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4483ADY-T1-GE3 DatasheetSI4483ADY-T1-GE3 Datasheet (P4-P6)SI4483ADY-T1-GE3 Datasheet (P7-P9)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Vishay Siliconix
categoria de producto
FET - Single
Serie
TrincheraFETR
embalaje
Embalaje alternativo de Digi-ReelR
Alias ​​de parte
SI4483ADY-GE3
Unidad de peso
0.006596 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
8-SOIC (0.154", 3.90mm Width)
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
1 Channel
Paquete de dispositivo de proveedor
8-SO
Configuración
Fuente triple de drenaje cuádruple simple
Tipo FET
Canal P MOSFET, óxido metálico
Potencia máxima
5.9W
Tipo transistor
1 P-Channel
Drenaje-a-fuente-voltaje-Vdss
30V
Entrada-Capacitancia-Ciss-Vds
3900pF @ 15V
Función FET
Estándar
Corriente-Continuo-Drenaje-Id-25 ° C
19.2A (Tc)
Rds-On-Max-Id-Vgs
8.8 mOhm @ 10A, 10V
Vgs-th-Max-Id
2.6V @ 250μA
Puerta-Carga-Qg-Vgs
135nC @ 10V
Disipación de potencia Pd
2.9 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
13 ns 28 ns
Hora de levantarse
13 ns 150 ns
Vgs-Puerta-Fuente-Voltaje
25 V
Id-corriente-de-drenaje-continua
13.5 A
Vds-Drain-Source-Breakdown-Voltage
- 30 V
Resistencia a la fuente de desagüe de Rds
8.8 mOhms
Polaridad del transistor
P-Channel
Tiempo de retardo de apagado típico
49 ns 43 ns
Tiempo de retardo de encendido típico
14 ns 70 ns
Modo de canal
Mejora
Tags
SI4483, SI448, SI44, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
Trans MOSFET P-CH 30V 19.2A 8-Pin SOIC N T/R / MOSFET P-CH 30V 19.2A 8-SOIC
***ure Electronics
P-CH MOSFET SO-8 30V 8.5MOHM @ 10V ESD PROTECTED
***nell
MOSFET, P CH, -30V, -19.2A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-19.2A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0127ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-2.1V; Power Dissipation Pd:5.9W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-
Parte # Mfg. Descripción Valores Precio
SI4483ADY-T1-GE3
DISTI # V72:2272_09216513		Vishay IntertechnologiesTrans MOSFET P-CH 30V 13.5A 8-Pin SOIC N T/R
RoHS: Compliant		2252
  • 1000:$0.5417
  • 500:$0.5785
  • 250:$0.6758
  • 100:$0.6777
  • 25:$0.8296
  • 10:$0.8328
  • 1:$0.9625
SI4483ADY-T1-GE3
DISTI # SI4483ADY-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 30V 19.2A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5447In Stock
  • 1000:$0.5948
  • 500:$0.7534
  • 100:$0.9715
  • 10:$1.2290
  • 1:$1.3900
SI4483ADY-T1-GE3
DISTI # SI4483ADY-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CH 30V 19.2A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5447In Stock
  • 1000:$0.5948
  • 500:$0.7534
  • 100:$0.9715
  • 10:$1.2290
  • 1:$1.3900
SI4483ADY-T1-GE3
DISTI # SI4483ADY-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 30V 19.2A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		5000In Stock
  • 2500:$0.5390
SI4483ADY-T1-GE3
DISTI # 29754202		Vishay IntertechnologiesTrans MOSFET P-CH 30V 13.5A 8-Pin SOIC N T/R
RoHS: Compliant		2500
  • 2500:$0.6688
SI4483ADY-T1-GE3
DISTI # 27148054		Vishay IntertechnologiesTrans MOSFET P-CH 30V 13.5A 8-Pin SOIC N T/R
RoHS: Compliant		2252
  • 1000:$0.5417
  • 500:$0.5785
  • 250:$0.6758
  • 100:$0.6777
  • 25:$0.8296
  • 15:$0.8328
SI4483ADY-T1-GE3
DISTI # SI4483ADY-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 30V 13.5A 8-Pin SOIC N T/R (Alt: SI4483ADY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 7500
  • 2500:$4.7300
  • 5000:$3.2621
  • 7500:$2.4256
  • 12500:$1.9708
  • 25000:$1.7849
  • 62500:$1.7200
  • 125000:$1.6597
SI4483ADY-T1-GE3
DISTI # SI4483ADY-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 30V 13.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4483ADY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.5089
  • 5000:$0.4939
  • 10000:$0.4739
  • 15000:$0.4609
  • 25000:$0.4479
SI4483ADY-T1-GE3
DISTI # 85W3209		Vishay IntertechnologiesTrans MOSFET P-CH 30V 13.5A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 85W3209)
RoHS: Not Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1:$0.7990
SI4483ADY-T1-GE3
DISTI # 97W2656		Vishay IntertechnologiesMOSFET Transistor, P Channel, -19.2 A, -30 V, 0.0127 ohm, -4.5 V, -2.1 V , RoHS Compliant: Yes4806
  • 1:$1.2300
  • 10:$1.0100
  • 25:$0.9310
  • 50:$0.8530
  • 100:$0.7740
  • 250:$0.7200
  • 500:$0.6660
SI4483ADY-T1-GE3
DISTI # 85W3209		Vishay IntertechnologiesMOSFET, P CHANNEL, -30V, 0.0127OHM, -19.2A, SOIC-8,Transistor Polarity:P Channel,Continuous Drain Current Id:-19.2A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0127ohm,Rds(on) Test Voltage Vgs:-4.5V,No. of Pins:8Pins , RoHS Compliant: Yes4089
  • 1:$1.4800
  • 10:$1.2100
  • 25:$1.1200
  • 50:$1.0200
  • 100:$0.9290
  • 250:$0.8640
  • 500:$0.7990
SI4483ADY-T1-GE3.
DISTI # 30AC0165		Vishay IntertechnologiesP-CHANNEL 30-V (D-S) MOSFET , ROHS COMPLIANT: NO0
  • 1:$0.5840
  • 2500:$0.5840
SI4483ADY-T1-GE3
DISTI # 781-SI4483ADY-GE3		Vishay IntertechnologiesMOSFET -30V Vds 25V Vgs SO-8
RoHS: Compliant		4185
  • 1:$1.2300
  • 10:$1.0100
  • 100:$0.7740
  • 500:$0.6660
  • 1000:$0.5850
  • 2500:$0.5840
SI4483ADY-T1-GE3
DISTI # C1S803603345321		Vishay IntertechnologiesMOSFETs2500
  • 2500:$0.8130
SI4483ADY-T1-GE3
DISTI # 2335315		Vishay IntertechnologiesMOSFET, P CH, -30V, -19.2A, SOIC
RoHS: Compliant		5202
  • 1:$1.9500
  • 10:$1.6000
  • 100:$1.2300
  • 500:$1.0500
  • 1000:$0.9270
  • 2500:$0.9260
SI4483ADY-T1-GE3Vishay IntertechnologiesMOSFET -30V Vds 25V Vgs SO-8
RoHS: Compliant		Americas - 2500
  • 2500:$0.4970
  • 5000:$0.4700
  • 10000:$0.4540
SI4483ADY-T1-GE3
DISTI # 2335315		Vishay IntertechnologiesMOSFET, P CH, -30V, -19.2A, SOIC
RoHS: Compliant		5490
  • 5:£0.8680
  • 25:£0.7800
  • 100:£0.5980
  • 250:£0.5570
  • 500:£0.5150
Imagen Parte # Descripción
SI4483ADY-T1-E3

Mfr.#: SI4483ADY-T1-E3

OMO.#: OMO-SI4483ADY-T1-E3-1190

 Nuevo y original
SI4483ADY-T1-GE3

Mfr.#: SI4483ADY-T1-GE3

OMO.#: OMO-SI4483ADY-T1-GE3-VISHAY

 MOSFET P-CH 30V 19.2A 8-SOIC
Disponibilidad
Valores:
Available
En orden:
1000
Ingrese la cantidad:
El precio actual de SI4483ADY-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,67 US$
0,67 US$
10
0,64 US$
6,37 US$
100
0,60 US$
60,35 US$
500
0,57 US$
284,95 US$
1000
0,54 US$
536,40 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
Empezar con
Top