FQP7N80C

FQP7N80C
Mfr. #:
FQP7N80C
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 800V N-Ch Q-FET advance C-Series
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FQP7N80C Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
800 V
Id - Corriente de drenaje continua:
6.6 A
Rds On - Resistencia de la fuente de drenaje:
1.9 Ohms
Vgs - Voltaje puerta-fuente:
30 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
167 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
QFET
Embalaje:
Tubo
Altura:
16.3 mm
Longitud:
10.67 mm
Serie:
FQP7N80C
Tipo de transistor:
1 N-Channel
Escribe:
MOSFET
Ancho:
4.7 mm
Marca:
ON Semiconductor / Fairchild
Transconductancia directa - Mín .:
5.5 S
Otoño:
60 ns
Tipo de producto:
MOSFET
Hora de levantarse:
100 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
50 ns
Tiempo típico de retardo de encendido:
35 ns
Parte # Alias:
FQP7N80C_NL
Unidad de peso:
0.063493 oz
Tags
FQP7N80C, FQP7N8, FQP7N, FQP7, FQP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 5, N-Channel MOSFET, 6.6 A, 800 V, 3-Pin TO-220AB ON Semiconductor FQP7N80C
***Semiconductor
Power MOSFET, N-Channel, QFET®, 800 V, 7 A, 1.9 Ω, TO-220
***p One Stop Japan
Trans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
N-Channel 800 V 1.9 Ohm Flange Mount Mosfet - TO-220-3
***i-Key
MOSFET N-CH 800V 6.6A TO-220
***ark
Qfc 800V 1.9Ohm To220 Rohs Compliant: Yes
***ser
MOSFETs 800V N-Ch Q-FET advance C-Series
***inecomponents.com
800V N-Channel Advance QFET® C-Series
***eco
3 LEAD PLASTIC W/EXPOSED HEATSNK
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***nell
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:800V; Current, Id Cont:6.6A; Resistance, Rds On:1.57ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C; Current, Idm Pulse:26.4A; External Length / Height:4.83mm; No. of Pins:3; Power Dissipation:167W; Power, Pd:167W; Resistance, Rds on Max:1.9ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:800V; Voltage, Vgs th Max:5V; Width, External:10.67mm
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:6.6A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.57ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:167W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.6A; Current Temperature:25°C; External Length / Height:4.83mm; External Width:10.67mm; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:1.9ohm; Package / Case:TO-220; Power Dissipation Pd:167W; Power Dissipation Pd:167W; Pulse Current Idm:26.4A; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
Parte # Mfg. Descripción Valores Precio
FQP7N80C
DISTI # V36:1790_06359748
ON SemiconductorQFC 800V 1.9OHM TO2208600
  • 5000:$0.7437
  • 2000:$0.7846
  • 1000:$0.8719
  • 500:$1.0713
  • 100:$1.2929
  • 10:$1.5492
  • 1:$1.7748
FQP7N80C
DISTI # FQP7N80C-ND
ON SemiconductorMOSFET N-CH 800V 6.6A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube
389In Stock
  • 1000:$1.2106
  • 500:$1.4611
  • 100:$1.8785
  • 10:$2.3380
  • 1:$2.5900
FQP7N80C
DISTI # 30333733
ON SemiconductorQFC 800V 1.9OHM TO2208600
  • 2000:$0.7846
  • 1000:$0.8719
  • 500:$1.0713
  • 100:$1.2929
  • 10:$1.5492
  • 8:$1.7748
FQP7N80C
DISTI # FQP7N80C
ON SemiconductorTrans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FQP7N80C)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Americas - 525
  • 1000:$0.9039
  • 2000:$0.8799
  • 4000:$0.8569
  • 6000:$0.8349
  • 10000:$0.8139
FQP7N80C
DISTI # FQP7N80C
ON SemiconductorTrans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) TO-220AB Rail (Alt: FQP7N80C)
RoHS: Compliant
Min Qty: 1
Europe - 500
  • 1:€1.4339
  • 10:€1.1729
  • 25:€1.0029
  • 50:€0.9099
  • 100:€0.8959
  • 500:€0.8819
  • 1000:€0.8689
FQP7N80C
DISTI # FQP7N80C
ON SemiconductorTrans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) TO-220AB Rail (Alt: FQP7N80C)
RoHS: Compliant
Min Qty: 1000
Asia - 5000
  • 1000:$0.9900
  • 2000:$0.9519
  • 3000:$0.9167
  • 5000:$0.8839
  • 10000:$0.8535
  • 25000:$0.8250
  • 50000:$0.8115
FQP7N80C
DISTI # 97K0195
ON SemiconductorMOSFET, N, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:6.6A,Drain Source Voltage Vds:800V,On Resistance Rds(on):1.57ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power Dissipation Pd:167W RoHS Compliant: Yes354
  • 1:$2.3700
  • 10:$2.0200
  • 100:$1.6400
  • 500:$1.4400
  • 1000:$1.2000
  • 2500:$1.1200
  • 5000:$1.0900
FQP7N80C.
DISTI # 29AC6380
Fairchild Semiconductor CorporationQFC 800V 1.9OHM TO220 ROHS COMPLIANT: YES525
  • 1:$2.3700
  • 10:$2.0200
  • 100:$1.6400
  • 500:$1.4400
  • 1000:$1.2000
  • 2500:$1.1200
  • 5000:$1.0900
FQP7N80C
DISTI # 512-FQP7N80C
ON SemiconductorMOSFET 800V N-Ch Q-FET advance C-Series
RoHS: Compliant
260
  • 1:$2.2300
  • 10:$1.8900
  • 100:$1.5100
  • 500:$1.3200
  • 1000:$1.1000
FQP7N80CFairchild Semiconductor CorporationPower Field-Effect Transistor, 6.6A I(D), 800V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant
11110
  • 1000:$1.1700
  • 500:$1.2300
  • 100:$1.2800
  • 25:$1.3400
  • 1:$1.4400
FQP7N80CFairchild Semiconductor Corporation 100
    FQP7N80C
    DISTI # 6715180P
    ON SemiconductorMOSFET N-CHANNEL 800V 6.6A TO220AB, TU1269
    • 50:£1.4260
    • 100:£1.3700
    FQP7N80C
    DISTI # 6715180
    ON SemiconductorMOSFET N-CHANNEL 800V 6.6A TO220AB, PK75
    • 5:£1.4860
    • 50:£1.4260
    • 100:£1.3700
    FQP7N80CFairchild Semiconductor Corporation6.6A, 800V, 1.9OHM, N-CHANNEL, SI, POWER, MOSFET, TO-220AB49
      FQP7N80C
      DISTI # 1095073
      ON SemiconductorMOSFET, N, TO-220
      RoHS: Compliant
      354
      • 1:$3.5300
      • 10:$3.0000
      • 100:$2.4000
      • 500:$2.0900
      • 1000:$1.7500
      • 2000:$1.6200
      • 5000:$1.5700
      • 10000:$1.5100
      FQP7N80C
      DISTI # C1S541901511605
      ON SemiconductorTrans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) TO-220AB Tube
      RoHS: Compliant
      8600
      • 1000:$0.8717
      • 500:$1.0330
      • 100:$1.2926
      • 10:$1.5603
      FQP7N80C
      DISTI # 1095073
      ON SemiconductorMOSFET, N, TO-220
      RoHS: Compliant
      358
      • 1:£1.5900
      • 10:£1.2200
      • 100:£0.9440
      • 250:£0.8850
      • 500:£0.8250
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      Disponibilidad
      Valores:
      Available
      En orden:
      1984
      Ingrese la cantidad:
      El precio actual de FQP7N80C es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      2,23 US$
      2,23 US$
      10
      1,89 US$
      18,90 US$
      100
      1,51 US$
      151,00 US$
      500
      1,32 US$
      660,00 US$
      1000
      1,10 US$
      1 100,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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