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DMN10H120SFG-13

DMN10H120SFG-13
Mfr. #:
DMN10H120SFG-13
Fabricante:
Diodes Incorporated
Descripción:
MOSFET FET BVDSS 61V 100V N-Ch 4.8A 3Vgs 549pF
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
DMN10H120SFG-13 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
DMN10H120SFG-13 DatasheetDMN10H120SFG-13 Datasheet (P4)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Diodos incorporados
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PowerDI3333-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
100 V
Id - Corriente de drenaje continua:
3.8 A
Rds On - Resistencia de la fuente de drenaje:
68 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1.5 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
10.6 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
1 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Serie:
D0H120
Tipo de transistor:
1 N-Channel
Marca:
Diodos incorporados
Otoño:
2.5 ns
Tipo de producto:
MOSFET
Hora de levantarse:
1.8 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
11.5 ns
Tiempo típico de retardo de encendido:
3.8 ns
Tags
DMN10H120SF, DMN10H12, DMN10H1, DMN10H, DMN10, DMN1, DMN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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MOSFET, N-CH, 3.3A, 100V, WDFN; Transistor Polarity:N Channel; Continuous Drain Current Id:3.3A; Source Voltage Vds:100V; On Resistance
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This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The low rDS(on) and gate charge provide excellent switching performance.
***nell
MOSFET, N-CH, 3.3A, 100V, WDFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.3A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.06ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 2.4W; Transistor Case Style: WDFN; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
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N-Channel PowerTrench® MOSFET, 100V, 3.7A, 120mΩ
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FAIRCHILD FDT3612 / MOSFET N-CH 100V 3.7A SOT-223 D/C D1025AC
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***ment14 APAC
MOSFET, N CH, 100V, 3.7A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):120mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:10.2A; Package / Case:SOT-223; Power Dissipation Pd:3W; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
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MOSFET, N CH, 100V, 2.7A, SSOT-3; Transistor Polarity:N Channel; Continuous Drai
***ure Electronics
FDN8601 Series 100 V 2.7 A 109 mOhm N-Ch PowerTrench Mosfet - SuperSOT-3
***emi
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***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
***nell
MOSFET, N CH, 100V, 2.7A, SSOT-3; Transistor Polarity:N Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0854ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:1.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SuperSOT; No. of Pins:3; MSL:MSL 1 - Unlimited
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MOSFET, N CH, 100V, 3.8A, TSOP-6; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.8A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.102ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Pow
***ure Electronics
MOSFET 100V Vds 20V Vgs TSOP-6
Parte # Mfg. Descripción Valores Precio
DMN10H120SFG-13
DISTI # DMN10H120SFG-13-ND		Diodes IncorporatedMOSFET N-CH 100V 3.8A POWERDI
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$0.2592
DMN10H120SFG-13
DISTI # 70550895		Diodes IncorporatedMOSFET N-Ch 100V 3.4A POWERDI3333-8
RoHS: Compliant		0
  • 100:$0.4800
  • 200:$0.3500
  • 500:$0.3100
  • 1000:$0.2800
DMN10H120SFG-13
DISTI # 621-DMN10H120SFG-13		Diodes IncorporatedMOSFET FET BVDSS 61V 100V N-Ch 4.8A 3Vgs 549pF
RoHS: Compliant		5955
  • 1:$0.6100
  • 10:$0.5040
  • 100:$0.3250
  • 1000:$0.2600
DMN10H120SFG-7
DISTI # 621-DMN10H120SFG-7		Diodes IncorporatedMOSFET FET BVDSS 61V 100V N-Ch 4.8A 3Vgs 549pF
RoHS: Compliant		2475
  • 1:$0.6100
  • 10:$0.5040
  • 100:$0.3250
  • 1000:$0.2600
DMN10H120SFG-13
DISTI # 8270529P		Zetex / Diodes IncMOSFET N-CH 100V 3.4A POWERDI3333-8, RL11980
  • 200:£0.3260
  • 400:£0.2890
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Mfr.#: 16-02-0103

OMO.#: OMO-16-02-0103-410

 Headers & Wire Housings SOCKET 24-22AWG BULK
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Mfr.#: 7443251600

OMO.#: OMO-7443251600-WURTH-ELECTRONICS

 FIXED IND 16UH 5A 34.5 MOHM SMD
Disponibilidad
Valores:
Available
En orden:
1986
Ingrese la cantidad:
El precio actual de DMN10H120SFG-13 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,60 US$
0,60 US$
10
0,50 US$
5,04 US$
100
0,32 US$
32,50 US$
1000
0,26 US$
260,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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