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Parte # | Mfg. | Descripción | Valores | Precio |
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FZ2400R12KE3B9NOSA1 DISTI # FZ2400R12KE3B9NOSA1 | Infineon Technologies AG | - Bulk (Alt: FZ2400R12KE3B9NOSA1) Min Qty: 1 Container: Bulk | Americas - 0 |
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FZ2400R12KE3B9NOSA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 3200A I(C), 1200V V(BR)CES, N-Channel RoHS: Not Compliant | 26 |
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Imagen | Parte # | Descripción |
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Mfr.#: FZ2400R12HE4_B9 OMO.#: OMO-FZ2400R12HE4-B9 |
IGBT Modules IGBT 1200V 2400A | |
Mfr.#: FZ2400R12HP4HOSA2 |
MODULE IGBT IHMB130-2 | |
Mfr.#: FZ2400R12HP4 OMO.#: OMO-FZ2400R12HP4-125 |
IGBT Modules IGBT 1200V 2400A | |
Mfr.#: FZ2400R12KL4C OMO.#: OMO-FZ2400R12KL4C-125 |
IGBT Modules 1200V 2400A SINGLE | |
Mfr.#: FZ2400R12EKE3 OMO.#: OMO-FZ2400R12EKE3-1190 |
Nuevo y original | |
Mfr.#: FZ2400R12HP4B9NPSA1 OMO.#: OMO-FZ2400R12HP4B9NPSA1-1190 |
IGBTs - Bulk (Alt: FZ2400R12HP4B9NPSA1) | |
Mfr.#: FZ2400R12KE3_B9_S1 OMO.#: OMO-FZ2400R12KE3-B9-S1-1190 |
Nuevo y original | |
Mfr.#: FZ2400R12HE4B9HOSA2 |
IHM-B module with Trench/Fieldstop IGBT and Emitter Controlled diode | |
Mfr.#: FZ2400R12KE3B9NOSA1 OMO.#: OMO-FZ2400R12KE3B9NOSA1-1190 |
Insulated Gate Bipolar Transistor, 3200A I(C), 1200V V(BR)CES, N-Channel | |
Mfr.#: FZ2400R12HP4NPSA1 OMO.#: OMO-FZ2400R12HP4NPSA1-1190 |
Insulated Gate Bipolar Transistor, 3460A I(C), 1200V V(BR)CES, N-Channel |