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IXKP20N60C5M

IXKP20N60C5M
Mfr. #:
IXKP20N60C5M
Fabricante:
Littelfuse
Descripción:
MOSFET 20 Amps 600V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXKP20N60C5M Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXKP20N60C5M DatasheetIXKP20N60C5M Datasheet (P4)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
7.6 A
Rds On - Resistencia de la fuente de drenaje:
200 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3.5 V
Vgs - Voltaje puerta-fuente:
20 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
33 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
COOLMOS
Embalaje:
Tubo
Serie:
IXKP20N60
Tipo de transistor:
1 N-Channel
Escribe:
CoolMOS Power MOSFET
Marca:
IXYS
Otoño:
5 ns
Tipo de producto:
MOSFET
Hora de levantarse:
5 ns
Cantidad de paquete de fábrica:
50
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
50 ns
Tiempo típico de retardo de encendido:
10 ns
Unidad de peso:
0.081130 oz
Tags
IXKP2, IXKP, IXK
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 600V 7.6A TO220ABFP
***S
new, original packaged
***el Nordic
Contact for details
***ical
Trans MOSFET N-CH 600V 9A 3-Pin(3+Tab) TO-220FP Tube
*** Stop Electro
Power Field-Effect Transistor, 9A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N-CH, 650V, 9A, TO-220FP-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 9A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.155ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Power Dissipation Pd: 29W; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS C7 Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
***ineon
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial
***ical
Trans MOSFET N-CH 650V 8A 3-Pin(3+Tab) TO-220FP Tube
***nell
MOSFET, N-CH, 650V, 8A, TO-220FP-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 8A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.168ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V;
***ineon SCT
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-TO220-3, RoHS
***ineon
Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power
***p One Stop Global
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220FM Bulk
***ark
Mosfet, N-Ch, 600V, 20A, To-220Fm; Transistor Polarity:n Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.17Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ronik
N-CH 600V 20A 200mOhm TO220FP-3
***ure Electronics
Single N-Channel 650 V 0.19 Ohm 87 nC CoolMOS™ Power Mosfet - TO-220-3FP
*** Electronics
INFINEON SPA20N60C3 TransMOSFET N-CH 600V 20.7A 3-Pin(3+Tab) TO-220FP RoHS
***ponent Stockers USA
20.7 A 600 V 0.19 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***roFlash
Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 20.7 / Drain-Source Voltage (Vds) V = 600 / ON Resistance (Rds(on)) mOhm = 190 / Gate-Source Voltage V = 20 / Fall Time ns = 4.5 / Rise Time ns = 5 / Turn-OFF Delay Time ns = 67 / Turn-ON Delay Time ns = 10 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-220FP / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 34.5
***ment14 APAC
MOSFET, N, COOLMOS, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:20.7A; Drain Source Voltage Vds:650V; On Resistance Rds(on):190mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:34.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:690mJ; Current Iar:20A; Current Id Max:20.7A; Current Idss Max:1mA; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; On State Resistance Max:190mohm; Package / Case:TO-220AB; Power Dissipation Pd:34.5W; Power Dissipation Pd:34.5W; Pulse Current Idm:62.1A; Rate of Voltage Change dv / dt:50V/µs; Repetitive Avalanche Energy Max:1mJ; Termination Type:Through Hole; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3.9V; Voltage Vgs th Min:2.1V
***icroelectronics
N-channel 600 V, 0.168 Ohm, 17 A MDmesh(TM) II Power MOSFET TO-220FP
*** Source Electronics
MOSFET N-CH 600V 17A TO-220FP / Trans MOSFET N-CH 600V 17A 3-Pin(3+Tab) TO-220FP Tube
***ark
MOSFET, N CH, 600V, 17A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:17A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 17A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***emi
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 22 A, 165 mΩ, TO-220F
***Yang
Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***enic
600V 22A 165m´Î@10V11A 39W 4V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
*** Stop Electro
Power Field-Effect Transistor, 22A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET Transistor; Transistor Polarity: N; MOSFET Transistor; Transistor Polarity: N Channel; Drain Source Voltage Vds: 600V; Continuous Drain Current Id: 22A; On Resistance Rds(on): 0.14ohm; Transistor Mounting: Through Hole; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V
***rchild Semiconductor
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Parte # Mfg. Descripción Valores Precio
IXKP20N60C5M
DISTI # IXKP20N60C5M-ND		IXYS CorporationMOSFET N-CH 600V 7.6A TO220FP
RoHS: Compliant
Min Qty: 50
Container: Tube		Temporarily Out of Stock
  • 50:$3.9352
Imagen Parte # Descripción
IXKP20N60C5M

Mfr.#: IXKP20N60C5M

OMO.#: OMO-IXKP20N60C5M

 MOSFET 20 Amps 600V
IXKP20N60C5

Mfr.#: IXKP20N60C5

OMO.#: OMO-IXKP20N60C5-IXYS-CORPORATION

 MOSFET N-CH 600V 20A TO220AB
IXKP20N60C5M

Mfr.#: IXKP20N60C5M

OMO.#: OMO-IXKP20N60C5M-IXYS-CORPORATION

 MOSFET 20 Amps 600V
Disponibilidad
Valores:
Available
En orden:
2000
Ingrese la cantidad:
El precio actual de IXKP20N60C5M es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
50
3,90 US$
195,00 US$
100
3,75 US$
375,00 US$
250
3,20 US$
800,00 US$
500
3,04 US$
1 520,00 US$
1000
2,56 US$
2 560,00 US$
2500
2,20 US$
5 500,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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