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SI7116DN-T1-GE3

SI7116DN-T1-GE3
Mfr. #:
SI7116DN-T1-GE3
Fabricante:
Vishay
Descripción:
MOSFET N-CH 40V 10.5A 1212-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI7116DN-T1-GE3 Ficha de datos
Entrega:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
VISHAY
categoria de producto
FET - Single
Serie
SI71xxDx
embalaje
Carrete
Alias ​​de parte
SI7116DN-GE3
Estilo de montaje
SMD / SMT
Nombre comercial
TrenchFET / PowerPAK
Paquete-Estuche
PowerPAK-1212-8
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
3.8 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
10 ns
Hora de levantarse
10 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
16.4 A
Vds-Drain-Source-Breakdown-Voltage
40 V
Resistencia a la fuente de desagüe de Rds
7.8 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
36 ns
Tiempo de retardo de encendido típico
10 ns
Modo de canal
Mejora
Tags
SI7116DN-T, SI7116D, SI7116, SI711, SI71, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 40 V 1.5 W 23 nC Silicon Surface Mount Mosfet - POWERPAK-1212-8
***ical
Trans MOSFET N-CH 40V 10.5A 8-Pin PowerPAK 1212 T/R
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:10.5A; Drain Source Voltage Vds:40V; On Resistance Rds(On):0.0065Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:1.5W; No. Of Pins:8Pins Rohs Compliant: Yes
Parte # Mfg. Descripción Valores Precio
SI7116DN-T1-GE3
DISTI # SI7116DN-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 40V 10.5A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		8988In Stock
  • 1000:$1.2764
  • 500:$1.5249
  • 100:$1.9390
  • 10:$2.3940
  • 1:$2.6500
SI7116DN-T1-GE3
DISTI # SI7116DN-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 40V 10.5A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		8988In Stock
  • 1000:$1.2764
  • 500:$1.5249
  • 100:$1.9390
  • 10:$2.3940
  • 1:$2.6500
SI7116DN-T1-GE3
DISTI # SI7116DN-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 40V 10.5A 1212-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		6000In Stock
  • 3000:$1.1588
SI7116DN-T1-GE3
DISTI # SI7116DN-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 40V 10.5A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7116DN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.5689
  • 6000:$0.5519
  • 12000:$0.5289
  • 18000:$0.5149
  • 30000:$0.5009
SI7116DN-T1-GE3Vishay IntertechnologiesTrans MOSFET N-CH 40V 10.5A 8-Pin PowerPAK 1212 T/R - Tape and Reel
RoHS: Compliant
Container: Reel		Americas - 0
    SI7116DN-T1-GE3
    DISTI # 84R8072    		Vishay IntertechnologiesN CHANNEL MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:10.5A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0065ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Power Dissipation Pd:1.5W RoHS Compliant: Yes0
    • 1000:$1.2800
    • 500:$1.3400
    • 250:$1.4300
    • 100:$1.5200
    • 50:$1.7500
    • 25:$1.9700
    • 1:$2.3700
    SI7116DN-T1-GE3.
    DISTI # 15AC0302    		Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:10.5A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0065ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Power Dissipation Pd:1.5W,No. of Pins:8Pins RoHS Compliant: Yes0
    • 1:$1.2700
    • 3000:$1.2700
    SI7116DN-T1-GE3
    DISTI # 781-SI7116DN-T1-GE3    		Vishay IntertechnologiesMOSFET 40V 16.4A 3.8W 7.8mohm @ 10V
    RoHS: Compliant    		2880
    • 1:$2.3600
    • 10:$1.9600
    • 100:$1.5200
    • 500:$1.3300
    SI7116DN-T1-GE3Vishay Intertechnologies 107
      SI7116DN-T1-GE3Vishay IntertechnologiesMOSFET 40V 16.4A 3.8W 7.8mohm @ 10VAmericas -
      • 3000:$0.5850
      • 6000:$0.5560
      • 12000:$0.5380
      • 18000:$0.5240
      Imagen Parte # Descripción
      SI7116DN-T1-GE3

      Mfr.#: SI7116DN-T1-GE3

      OMO.#: OMO-SI7116DN-T1-GE3

      		 MOSFET 40V 16.4A 3.8W 7.8mohm @ 10V
      SI7116DN-T1-E3

      Mfr.#: SI7116DN-T1-E3

      OMO.#: OMO-SI7116DN-T1-E3

      		 MOSFET 40V 16.4A 3.8W 7.8mohm @ 10V
      SI7116DN-T1-E3-CUT TAPE

      Mfr.#: SI7116DN-T1-E3-CUT TAPE

      OMO.#: OMO-SI7116DN-T1-E3-CUT-TAPE-1190

      		 Nuevo y original
      SI7116DN

      Mfr.#: SI7116DN

      OMO.#: OMO-SI7116DN-1190

      		 Nuevo y original
      SI7116DN-T1-E3

      Mfr.#: SI7116DN-T1-E3

      OMO.#: OMO-SI7116DN-T1-E3-VISHAY

      		 MOSFET N-CH 40V 10.5A 1212-8
      SI7116DN-T1-GE3

      Mfr.#: SI7116DN-T1-GE3

      OMO.#: OMO-SI7116DN-T1-GE3-VISHAY

      		 MOSFET N-CH 40V 10.5A 1212-8
      SI7116DN-T1-GE3 7116

      Mfr.#: SI7116DN-T1-GE3 7116

      OMO.#: OMO-SI7116DN-T1-GE3-7116-1190

      		 Nuevo y original
      Disponibilidad
      Valores:
      Available
      En orden:
      4500
      Ingrese la cantidad:
      El precio actual de SI7116DN-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,75 US$
      0,75 US$
      10
      0,71 US$
      7,14 US$
      100
      0,68 US$
      67,62 US$
      500
      0,64 US$
      319,30 US$
      1000
      0,60 US$
      601,10 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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