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TGF2819-FS

TGF2819-FS
Mfr. #:
TGF2819-FS
Fabricante:
Qorvo
Descripción:
RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
TGF2819-FS Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
TGF2819-FS más información
Atributo del producto
Valor de atributo
Fabricante:
Cree, Inc.
Categoria de producto:
Transistores RF JFET
RoHS:
Y
Tipo de transistor:
HEMT
Tecnología:
GaN
Ganar:
14.5 dB
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
150 V
Vgs - Voltaje de ruptura de puerta-fuente:
- 10 V, 2 V
Id - Corriente de drenaje continua:
10.4 A
Potencia de salida:
75 W
Voltaje máximo de la puerta de drenaje:
50 V
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 107 C
Pd - Disipación de energía:
52 W
Estilo de montaje:
SMD / SMT
Embalaje:
Carrete
Solicitud:
Estaciones base de radar de banda S y LTE
Configuración:
Único
Frecuencia de operación:
3.5 GHz
Rango de temperatura de funcionamiento:
- 40 C to + 107 C
Marca:
Velocidad de lobo / Cree
Tipo de producto:
Transistores RF JFET
Cantidad de paquete de fábrica:
250
Subcategoría:
Transistores
Vgs th - Voltaje umbral puerta-fuente:
- 3 V
Tags
TGF281, TGF28, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC- 3.5 GHz, 100 W, 14 dB, 32 V, GaN
TGF2819-FS/FL RF Power Transistors
Qorvot TGF2819-FS/FL RF Power Transistors provide a greater-than 100W Peak (20W Avg.) (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5GHz. Designed using TriQuint's proven TQGaN25HV process, the TGF2819-FS/FL RF Power Transistors offer advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. The optimization features provided by TGF2819-FS/FL may potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Qorvo TGF2819-FS/FL RF Power Transistors are ideal for military radar, civilian radar, professional & military radio communications, test instrumentation, wideband or narrowband amplifiers, and jammers.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Parte # Mfg. Descripción Valores Precio
TGF2819-FS
DISTI # 772-TGF2819-FS		QorvoRF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
RoHS: Compliant		0
  • 25:$316.7800
TGF2819-FS-EVB1
DISTI # 772-TGF2819-FS-EVB1		QorvoRF Development Tools DC-3.5GHz 32V GaN Eval Board
RoHS: Compliant		2
  • 1:$875.0000
Imagen Parte # Descripción
TGF2819-FL

Mfr.#: TGF2819-FL

OMO.#: OMO-TGF2819-FL

 RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
TGF2819-FS

Mfr.#: TGF2819-FS

OMO.#: OMO-TGF2819-FS

 RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
TGF280L

Mfr.#: TGF280L

OMO.#: OMO-TGF280L

 Thermal Interface Products Thermal Gap Fill Pad
TGF2819-FS

Mfr.#: TGF2819-FS

OMO.#: OMO-TGF2819-FS-318

 RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
TGF2819-FL

Mfr.#: TGF2819-FL

OMO.#: OMO-TGF2819-FL-318

 RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
TGF2819-FS-EVB1

Mfr.#: TGF2819-FS-EVB1

OMO.#: OMO-TGF2819-FS-EVB1-1152

 RF Development Tools DC-3.5GHz 32V GaN Eval Board
TGF2819-FLPCB4B01

Mfr.#: TGF2819-FLPCB4B01

OMO.#: OMO-TGF2819-FLPCB4B01-1152

 RF Development Tools
TGF280L

Mfr.#: TGF280L

OMO.#: OMO-TGF280L-LEADER-TECH

 Nuevo y original
Disponibilidad
Valores:
Available
En orden:
3500
Ingrese la cantidad:
El precio actual de TGF2819-FS es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
25
316,78 US$
7 919,50 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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